IPP022N12NM6AKSA1 - 120V 2.2mΩ OptiMOS 6 N-MOSFET | Infineon
Référence : IPP022N12NM6AKSA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.42 | $3,42 |
| 10 | $3.07 | $30,70 |
| 100 | $2.65 | $265,00 |
| 500 | $2.31 | $1 155,00 |
| 1 000 | $2.04 | $2 040,00 |
IPP022N12NM6AKSA1 Présentation
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or chop current in power conversion circuits. MOSFETs sit within the discrete semiconductor hierarchy as a sub-category of transistors, alongside BJTs and IGBTs, and are the workhorse building block of synchronous rectifiers, motor drives, and hot-swap controllers. OptiMOS 6 is Infineon's sixth-generation 100-150V trench MOSFET platform optimized for lowest figure-of-merit (RDS(on) × Qg) to minimize conduction and switching losses simultaneously.
Key features include a typical gate charge of approximately 105 nC, low gate threshold voltage optimized for standard 10 V drive, an intrinsic fast body diode suitable for bridge topologies, and avalanche-rated ruggedness. The TO-220 package offers industry-standard through-hole mounting and an exposed metal tab for direct attachment to a heatsink or chassis, supporting power dissipation up to 395 W at 25°C case temperature with proper thermal management.
The OptiMOS 6 technology employs an advanced trench cell architecture with optimized field-plate design, achieving superior switching performance compared to planar MOSFETs of equivalent RDS(on). The lower gate charge and reduced output capacitance enable higher-frequency operation in switched-mode power supplies, reducing the size of magnetics and output filters.
Typical applications include high-efficiency server and telecom switched-mode power supplies (SMPS), brushless DC (BLDC) motor drives, solar inverters, battery management systems for e-mobility, synchronous rectification stages, and high-current power tools. The 120V rating provides ample margin for 48V telecom bus, 60V battery, and industrial 96V rectified bus applications.
When designing with this device, prioritize minimizing parasitic source inductance in the gate-drive loop to avoid dv/dt-induced turn-on. Use a gate-source resistor of 10-100 Ω to dampen ringing and ensure the heatsink is sized to keep junction temperature below 150°C under worst-case continuous load.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not typically consolidated in the manufacturer datasheet alone.
Alternatives de remplacement direct pour IPP022N12NM6AKSA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IPP022N12NM6AKSA1 (même facteur de forme et même empreinte) — différant par Drain-Source Voltage (VDS), Package, Power Dissipation (PD) at TC=25°C, RoHS Status, Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IPP023N12NM6AKSA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPP022N08N5AKSA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
IRFB4110PBF
✅ Remplacement direct✓ En stock
$1.55 / unité
Voir la fiche technique →SiHP22N12E-GE3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NTMFS5C442NLT1G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPP022N12NM6AKSA1 Valeurs maximales et caractéristiques électriques
| Technology | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at TA=25°C | 29 A |
| Pulsed Drain Current (IDM) at TC=25°C | 203 A |
| Static Drain-Source On-Resistance (RDS(on)) max | 2.2 mΩ |
| Power Dissipation (PD) at TA=25°C | 3.8 W |
| Power Dissipation (PD) at TC=25°C | 395 W |
| Plage de température de fonctionnement | -55°C to +175°C |
| Boîtier | PG-TO220-3-1 (TO-220 through-hole) |
| Type de montage | Through Hole |
| Nombre de broches | 3 (Gate, Drain, Source) |
| Statut RoHS | Compliant |
| Manufacturer | Infineon Technologies |
Configuration des broches de IPP022N12NM6AKSA1
| Broche 1 | Gate (G) — Gate control input - drive with 10V VGS for full enhancement |
| Broche 2 | Drain (D) — Main current terminal; electrically bonded to metal tab |
| Broche 3 | Source (S) — Return terminal for gate drive and main current path |
Zone de fonctionnement sûr (SOA) - IPP022N12NM6
Applications typiques
IPP022N12NM6AKSA1 convient pour 6 applications: 48V Telecom Switched-Mode Power Supply (SMPS), Brushless DC (BLDC) Motor Drive, Solar String Inverter, High-Current Synchronous Rectification, Battery Management System (BMS) for E-Mobility, High-Power Industrial SMPS and Welding Equipment.
48V Telecom Switched-Mode Power Supply (SMPS)
The IPP022N12NM6AKSA1's 120 V VDS rating and 2.2 mΩ max RDS(on) make it ideal for synchronous rectification stages in 48V telecom isolated DC-DC converters. In a typical half-bridge topology operating at 100-200 kHz, this MOSFET delivers >97% efficiency by minimizing both conduction and switching losses. The OptiMOS 6 platform's low Qg reduces gate-drive losses, enabling higher switching frequencies that shrink transformer and output filter size. Designers should pair it with a dedicated gate driver IC such as the EiceDRIVER 1EDB8275FXUMA1 to fully exploit the device's switching performance while keeping the heatsink below 100°C at full load.
Recommandé
Brushless DC (BLDC) Motor Drive
In three-phase BLDC motor drives for e-mobility and industrial automation, the IPP022N12NM6AKSA1 serves as the low-side or high-side switch in a three-phase inverter stage. With 203 A pulsed current capability, it can deliver peak torque during motor startup while sustaining 29 A continuous for steady-state operation. The 120 V rating comfortably covers 48V battery systems and 60V nominal industrial buses. The OptiMOS 6 fast body diode enables reliable operation during commutation, and the TO-220 package simplifies heatsink attachment in through-hole designs where SMD thermal management is impractical.
Recommandé
Solar String Inverter
For residential and commercial solar string inverters, the IPP022N12NM6AKSA1 functions as the main switching element in the DC-DC boost or full-bridge inverter stage converting PV panel output to grid-tied AC. The 120V VDS rating suits strings up to approximately 96V open-circuit under cold conditions, while the 2.2 mΩ RDS(on) keeps conduction losses below 1% at typical string currents. OptiMOS 6's low reverse recovery charge (Qrr) minimizes switching losses in the hard-switched boost topology, contributing to CEC-weighted efficiency above 98% in well-designed systems. The TO-220 package enables direct chassis mounting for thermal dissipation.
Recommandé
High-Current Synchronous Rectification
In high-current isolated DC-DC converters (e.g., 48V-to-12V bus converters delivering 50-100A), the IPP022N12NM6AKSA1 replaces Schottky diodes as the synchronous rectifier on the secondary side. With 2.2 mΩ RDS(on), conduction losses are typically 5-10x lower than equivalent Schottky diodes, dramatically improving full-load efficiency. The 120 V rating provides margin for ringing transients in the secondary winding, and the low Qg of OptiMOS 6 enables duty-cycle-accurate synchronous rectification at switching frequencies up to 500 kHz when paired with a dedicated SR controller like the IFX9201SGAUMA1.
Recommandé
Battery Management System (BMS) for E-Mobility
In 48V mild-hybrid and 60V e-mobility battery management systems, the IPP022N12NM6AKSA1 acts as the main disconnect switch and pre-charge MOSFET. Its 203 A pulsed current capability handles inrush during pre-charge, while the 120V VDS rating covers typical battery pack voltages with safety margin. The very low RDS(on) of 2.2 mΩ minimizes quiescent losses during normal operation - critical for EV range - while the TO-220 package allows easy integration with busbar-style battery pack construction. OptiMOS 6's avalanche ruggedness provides additional protection against inductive transients when switching off under load.
Recommandé
High-Power Industrial SMPS and Welding Equipment
For industrial welding inverters, plasma cutters, and high-power SMPS, the IPP022N12NM6AKSA1 serves as the primary switching element in hard-switched bridge topologies. The 395 W power dissipation capability at TC=25°C with proper heatsinking supports continuous operation at high switching currents, while the 120V rating suits 96V rectified mains applications. OptiMOS 6's optimized SOA allows short-circuit withstand times typically exceeding 5 μs - critical for industrial fault tolerance. The through-hole TO-220 package withstands the mechanical vibration and thermal cycling common in industrial environments better than SMD alternatives.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IPP022N12NM6AKSA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IPP023N12NM6AKSA1 | IRFB4110PBF | SiHP22N12E-GE3 | NTMFS5C442NLT1G |
|---|---|---|---|---|---|
| Package | TO-220 (PG-TO220-3-1) | TO-220 - same | TO-220 - same | TO-220 - same | TO-220 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies (legacy IR) | Vishay Intertechnology | onsemi |
| VDS (Drain-Source Voltage) | 120 V | 120 V | 100 V | 120 V | 120 V |
| RDS(on) max | 2.2 mΩ | 2.5 mΩ | 4.5 mΩ | 22 mΩ | 42 mΩ |
| Continuous ID (TA=25°C) | 29 A | 27 A | 180 A (pulse-class spec) | 22 A | 32 A |
| Pulsed ID (TC=25°C) | 203 A | 190 A | 660 A | 90 A | 150 A |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | Legacy HEXFET (Gen 6) | E-Series Power MOSFET | onsemi N-channel MOSFET |
| Approx. Unit Price (1k qty) | USD 2.04 | USD 1.95 (estimated, lower performance) | USD 2.50 | USD 2.80 | USD 1.60 |
Principaux différenciateurs
- Lowest RDS(on) in 120V OptiMOS 6 TO-220 family (vs IRFB4110PBF)
- Modern OptiMOS 6 vs legacy HEXFET technology (vs SiHP22N12E-GE3)
- 120V VDS rating vs lower-voltage competitors (vs NTMFS5C442NLT1G)
Notes de conception
Estimated: At continuous ID = 29 A with RDS(on) = 2.2 mΩ, conduction losses are approximately P = I² × R = 29² × 0.0022 = 1.85 W. However, in switching applications at high frequency, switching losses (P_sw = 0.5 × VDS × ID × (tr + tf) × fsw) often dominate - at 100 kHz with tr+tf = 50 ns and VDS = 96V, switching losses reach ~7 W. Total power ~9 W requires the TO-220 tab mounted to a heatsink with thermal resistance below 5°C/W to keep junction below 150°C in 70°C ambient. Always use thermal interface material (TIM) between tab and heatsink.
Use a Kelvin-source connection where the gate-drive return current bypasses the main source inductance. Connect the gate-driver ground directly to the Source lead (pin 3), not to the power ground plane shared with the load. Keep the gate-drive loop area under 1 cm² to minimize parasitic inductance; gate ringing above VGS(max) = ±20V can permanently damage the gate oxide. A 10 Ω gate-source resistor in parallel with a 10-100 Ω gate-drive resistor dampens the LC resonance.
Do not exceed VGS = ±20 V absolute maximum - even brief transients during switching can punch through the gate oxide. Use a gate-drive voltage of 10 V (not 12 V) when the device operates near VDS(max) to limit dv/dt-induced turn-on. Ensure the body diode is not used as a continuous freewheeling path; OptiMOS 6 body diodes have limited reverse recovery - use an external Schottky or anti-parallel MOSFET for hard-switched bridge topologies. The tab is electrically connected to the drain; isolate it with a mica washer or silicone pad when mounting to a grounded chassis.
Informations de conformité
RoHS and REACH compliant per Infineon product page. AEC-Q100 not applicable for this industrial-grade TO-220 part. Lead-free (Pb-free) reflow compatible per JESD22-A111.
