IPP022N12NM6AKSA1 - 120V 2.2mΩ OptiMOS 6 N-MOSFET | Infineon
MPN: IPP022N12NM6AKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.07 | $30.70 |
| 100 | $2.65 | $265.00 |
| 500 | $2.31 | $1,155.00 |
| 1,000 | $2.04 | $2,040.00 |
Drop-in alternatives for IPP022N12NM6AKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IPP022N12NM6AKSA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at TA=25°C | 29 A |
| Pulsed Drain Current (IDM) at TC=25°C | 203 A |
| Static Drain-Source On-Resistance (RDS(on)) max | 2.2 mΩ |
| Power Dissipation (PD) at TA=25°C | 3.8 W |
| Power Dissipation (PD) at TC=25°C | 395 W |
| Operating Temperature Range | -55°C to +175°C |
| Package | PG-TO220-3-1 (TO-220 through-hole) |
| Mounting Type | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) |
| RoHS Status | Compliant |
| Manufacturer | Infineon Technologies |
IPP022N12NM6AKSA1 Pin Configuration
| Pin 1 | Gate (G) — Gate control input - drive with 10V VGS for full enhancement |
| Pin 2 | Drain (D) — Main current terminal; electrically bonded to metal tab |
| Pin 3 | Source (S) — Return terminal for gate drive and main current path |
Safe Operating Area (SOA) - IPP022N12NM6
Typical Applications
IPP022N12NM6AKSA1 is suitable for 6 applications: 48V Telecom Switched-Mode Power Supply (SMPS), Brushless DC (BLDC) Motor Drive, Solar String Inverter, High-Current Synchronous Rectification, Battery Management System (BMS) for E-Mobility, High-Power Industrial SMPS and Welding Equipment.
48V Telecom Switched-Mode Power Supply (SMPS)
The IPP022N12NM6AKSA1's 120 V VDS rating and 2.2 mΩ max RDS(on) make it ideal for synchronous rectification stages in 48V telecom isolated DC-DC converters. In a typical half-bridge topology operating at 100-200 kHz, this MOSFET delivers >97% efficiency by minimizing both conduction and switching losses. The OptiMOS 6 platform's low Qg reduces gate-drive losses, enabling higher switching frequencies that shrink transformer and output filter size. Designers should pair it with a dedicated gate driver IC such as the EiceDRIVER 1EDB8275FXUMA1 to fully exploit the device's switching performance while keeping the heatsink below 100°C at full load.
Recommended
Brushless DC (BLDC) Motor Drive
In three-phase BLDC motor drives for e-mobility and industrial automation, the IPP022N12NM6AKSA1 serves as the low-side or high-side switch in a three-phase inverter stage. With 203 A pulsed current capability, it can deliver peak torque during motor startup while sustaining 29 A continuous for steady-state operation. The 120 V rating comfortably covers 48V battery systems and 60V nominal industrial buses. The OptiMOS 6 fast body diode enables reliable operation during commutation, and the TO-220 package simplifies heatsink attachment in through-hole designs where SMD thermal management is impractical.
Recommended
Solar String Inverter
For residential and commercial solar string inverters, the IPP022N12NM6AKSA1 functions as the main switching element in the DC-DC boost or full-bridge inverter stage converting PV panel output to grid-tied AC. The 120V VDS rating suits strings up to approximately 96V open-circuit under cold conditions, while the 2.2 mΩ RDS(on) keeps conduction losses below 1% at typical string currents. OptiMOS 6's low reverse recovery charge (Qrr) minimizes switching losses in the hard-switched boost topology, contributing to CEC-weighted efficiency above 98% in well-designed systems. The TO-220 package enables direct chassis mounting for thermal dissipation.
Recommended
High-Current Synchronous Rectification
In high-current isolated DC-DC converters (e.g., 48V-to-12V bus converters delivering 50-100A), the IPP022N12NM6AKSA1 replaces Schottky diodes as the synchronous rectifier on the secondary side. With 2.2 mΩ RDS(on), conduction losses are typically 5-10x lower than equivalent Schottky diodes, dramatically improving full-load efficiency. The 120 V rating provides margin for ringing transients in the secondary winding, and the low Qg of OptiMOS 6 enables duty-cycle-accurate synchronous rectification at switching frequencies up to 500 kHz when paired with a dedicated SR controller like the IFX9201SGAUMA1.
Recommended
Battery Management System (BMS) for E-Mobility
In 48V mild-hybrid and 60V e-mobility battery management systems, the IPP022N12NM6AKSA1 acts as the main disconnect switch and pre-charge MOSFET. Its 203 A pulsed current capability handles inrush during pre-charge, while the 120V VDS rating covers typical battery pack voltages with safety margin. The very low RDS(on) of 2.2 mΩ minimizes quiescent losses during normal operation - critical for EV range - while the TO-220 package allows easy integration with busbar-style battery pack construction. OptiMOS 6's avalanche ruggedness provides additional protection against inductive transients when switching off under load.
Recommended
High-Power Industrial SMPS and Welding Equipment
For industrial welding inverters, plasma cutters, and high-power SMPS, the IPP022N12NM6AKSA1 serves as the primary switching element in hard-switched bridge topologies. The 395 W power dissipation capability at TC=25°C with proper heatsinking supports continuous operation at high switching currents, while the 120V rating suits 96V rectified mains applications. OptiMOS 6's optimized SOA allows short-circuit withstand times typically exceeding 5 μs - critical for industrial fault tolerance. The through-hole TO-220 package withstands the mechanical vibration and thermal cycling common in industrial environments better than SMD alternatives.
Recommended
Recommended Products Summary
Engineering reference data for IPP022N12NM6AKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP023N12NM6AKSA1 | IRFB4110PBF | SiHP22N12E-GE3 | NTMFS5C442NLT1G |
|---|---|---|---|---|---|
| Package | TO-220 (PG-TO220-3-1) | TO-220 - same | TO-220 - same | TO-220 - same | TO-220 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies (legacy IR) | Vishay Intertechnology | onsemi |
| VDS (Drain-Source Voltage) | 120 V | 120 V | 100 V | 120 V | 120 V |
| RDS(on) max | 2.2 mΩ | 2.5 mΩ | 4.5 mΩ | 22 mΩ | 42 mΩ |
| Continuous ID (TA=25°C) | 29 A | 27 A | 180 A (pulse-class spec) | 22 A | 32 A |
| Pulsed ID (TC=25°C) | 203 A | 190 A | 660 A | 90 A | 150 A |
| Power Dissipation (TC=25°C) | 395 W | 375 W | 370 W | 220 W | [DATA_NEEDED] |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | Legacy HEXFET (Gen 6) | E-Series Power MOSFET | onsemi N-channel MOSFET |
| Approx. Unit Price (1k qty) | USD 2.04 | USD 1.95 (estimated, lower performance) | USD 2.50 | USD 2.80 | USD 1.60 |
Key Differentiators
- Lowest RDS(on) in 120V OptiMOS 6 TO-220 family (vs IRFB4110PBF)
- Modern OptiMOS 6 vs legacy HEXFET technology (vs SiHP22N12E-GE3)
- 120V VDS rating vs lower-voltage competitors (vs NTMFS5C442NLT1G)
Design Notes
Estimated: At continuous ID = 29 A with RDS(on) = 2.2 mΩ, conduction losses are approximately P = I² × R = 29² × 0.0022 = 1.85 W. However, in switching applications at high frequency, switching losses (P_sw = 0.5 × VDS × ID × (tr + tf) × fsw) often dominate - at 100 kHz with tr+tf = 50 ns and VDS = 96V, switching losses reach ~7 W. Total power ~9 W requires the TO-220 tab mounted to a heatsink with thermal resistance below 5°C/W to keep junction below 150°C in 70°C ambient. Always use thermal interface material (TIM) between tab and heatsink.
Use a Kelvin-source connection where the gate-drive return current bypasses the main source inductance. Connect the gate-driver ground directly to the Source lead (pin 3), not to the power ground plane shared with the load. Keep the gate-drive loop area under 1 cm² to minimize parasitic inductance; gate ringing above VGS(max) = ±20V can permanently damage the gate oxide. A 10 Ω gate-source resistor in parallel with a 10-100 Ω gate-drive resistor dampens the LC resonance.
Do not exceed VGS = ±20 V absolute maximum - even brief transients during switching can punch through the gate oxide. Use a gate-drive voltage of 10 V (not 12 V) when the device operates near VDS(max) to limit dv/dt-induced turn-on. Ensure the body diode is not used as a continuous freewheeling path; OptiMOS 6 body diodes have limited reverse recovery - use an external Schottky or anti-parallel MOSFET for hard-switched bridge topologies. The tab is electrically connected to the drain; isolate it with a mica washer or silicone pad when mounting to a grounded chassis.
Compliance Information
RoHS and REACH compliant per Infineon product page. AEC-Q100 not applicable for this industrial-grade TO-220 part. Lead-free (Pb-free) reflow compatible per JESD22-A111.
