IRF1407PBF - 75V 130A N-Channel HEXFET MOSFET | Infineon
Référence : IRF1407PBF ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.65 | $1,65 |
| 10 | $1.42 | $14,20 |
| 100 | $1.18 | $118,00 |
| 500 | $0.98 | $490,00 |
| 1 000 | $0.86 | $860,00 |
IRF1407PBF Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch or amplify electrical signals in power-electronics applications. The N-channel enhancement-mode variant requires a positive gate-source voltage to turn on and is the dominant topology for low-voltage, high-current switching because electron mobility in the channel is roughly 2-3x higher than hole mobility, yielding lower RDS(on) for a given silicon area. Within the broader taxonomy, MOSFETs are members of the power transistor family alongside IGBTs and BJTs, sitting under the discrete-semiconductor hierarchy.
Key electrical strengths of the IRF1407PBF include its industry-leading 7.8 mOhm RDS(on) at 10V VGS, which directly minimizes conduction loss in high-current paths, and a low typical gate charge of 160 nC that enables fast switching transitions at high frequencies. The 175C rated junction temperature provides substantial thermal headroom for harsh industrial environments, and the fully avalanche-rated design allows unclamped inductive switching within the published repetitive-avalanche energy limit.
The device is built on Infineon's advanced stripe-planar HEXFET process, where the source metal is arranged in stripes over the silicon to maximize cell density and minimize cell resistance. This architecture, combined with the company's latest processing techniques, achieves an unusually low figure of merit (FOM = RDS(on) x Qg) for a 75V part, making the IRF1407PBF well suited to high-current synchronous-rectifier and motor-drive stages where both conduction and switching losses matter.
Typical applications include high-current DC motor drives in industrial automation, synchronous-rectifier stages in 48V telecom and server power supplies, low-voltage high-current buck converters for battery management, solenoid and relay drivers, and uninterruptible power supply (UPS) battery switches. The 75V rating also gives comfortable margin in 24V and 48V automotive and telecom bus systems.
When designing with the IRF1407PBF, ensure the gate driver can source and sink at least 1-2A to charge and discharge the 160 nC gate charge within the target switching time, and observe the SOA curve in the manufacturer datasheet for linear-mode or hot-swap operation. Use a low-impedance gate-source connection with a pull-down resistor to prevent inadvertent turn-on from Miller current.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including a side-by-side comparison with same-package TO-220AB alternates.
Alternatives de remplacement direct pour IRF1407PBF — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IRF1407PBF (même facteur de forme et même empreinte) — différant par Technology, Package, RoHS Status, Total Gate Charge (Qg), Drain-Source Voltage (VDS).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IRFB3207PBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRF1404PBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFB3077PBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFB4110PBF
✅ Remplacement direct✓ En stock
$1.55 / unité
Voir la fiche technique →IRFB4310PBF
✅ Remplacement direct✓ En stock
$1.95 / unité
Voir la fiche technique →STP140NF75
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFZ44NPBF
✅ Remplacement direct✓ En stock
$0.65 / unité
Voir la fiche technique →IRF1407PBF Valeurs maximales et caractéristiques électriques
| FET Type | N-Channel |
| Technology | HEXFET (stripe-planar MOSFET) |
| Drain-Source Voltage (VDS) | 75 V |
| Continuous Drain Current (ID) at TC=25C | 130 A |
| Power Dissipation (PD) at TC=25C | 330 W |
| On-Resistance RDS(on) at VGS=10V | 7.8 mOhm (typical) |
| Gate Charge (Qg) | 160 nC (typical) |
| Maximum Junction Temperature | 175 C |
| Plage de température de fonctionnement | -55 C to +175 C |
| Boîtier | TO-220AB (through-hole, 3 leads) |
| Type de montage | Through Hole |
| Lead-Free / RoHS | Lead-free, RoHS compliant (PBF suffix) |
| Avalanche Rating | Repetitive avalanche rated |
Configuration des broches de IRF1407PBF
| Broche 1 | Gate — Gate drive input; 10V VGS required for full enhancement |
| Broche 2 | Drain — Drain terminal; internally connected to the metal tab |
| Broche 3 | Source — Source terminal; power and signal return |
Zone de fonctionnement sûr - IRF1407PBF (TO-220AB)
Applications typiques
IRF1407PBF convient pour 7 applications: 48V Telecom Synchronous Rectifier, High-Current DC Motor Drive, 24V/48V Battery Management Switch, Uninterruptible Power Supply (UPS) Battery Switch, Solenoid and Relay Driver, High-Current Buck Converter Switch, Automotive 12V/24V Heavy-Duty Load Switch.
48V Telecom Synchronous Rectifier
The IRF1407PBF fits 48V telecom synchronous-rectifier stages because its 75V VDS rating leaves 27V headroom above the nominal 48V bus, comfortably absorbing telecom transient surges per ETSI EN 300 132-2. With 7.8 mOhm RDS(on) at 130A, conduction loss at full load is roughly 100W - manageable on a TO-220AB heatsink per the Infineon SOA curve. The 160 nC gate charge enables 100-200 kHz switching with a 1-2A gate driver, while the 175C junction rating tolerates the thermal cycling typical of rectifier stages.
Recommandé
High-Current DC Motor Drive
The IRF1407PBF suits industrial DC motor-drive H-bridges and brushed-motor PWM stages thanks to its 130A continuous drain current and 7.8 mOhm RDS(on), which keeps conduction loss low at the 30-80A typical motor currents. The 75V VDS rating covers 24V and 48V industrial bus systems with margin for back-EMF spikes from inductive loads. Per the manufacturer datasheet, the 175C junction temperature and repetitive-avalanche rating allow robust handling of motor braking energy. Place a TVS or RC snubber across the motor terminals to clamp inductive transients below the VDS rating.
Recommandé
24V/48V Battery Management Switch
The IRF1407PBF is well matched to battery-management disconnect and precharge switches in 24V and 48V battery packs. Its 7.8 mOhm RDS(on) minimizes steady-state dissipation across the disconnect switch, while the 75V VDS rating tolerates transient overvoltages from regenerative loads and inductive cabling. The repetitive-avalanche rating per the Infineon datasheet handles the precharge inrush energy when the bulk capacitors are charged through the MOSFET's body diode. Use a low-impedance gate pull-down resistor to keep the device off during controller reset.
Recommandé
Uninterruptible Power Supply (UPS) Battery Switch
The IRF1407PBF handles the battery-side disconnect switch in UPS systems where 48V battery banks must be isolated from the inverter during fault conditions. Its 130A continuous rating covers most 5-10 kVA UPS battery currents, while the 7.8 mOhm RDS(on) keeps conduction loss below 70W at full load, manageable on a TO-220AB heatsink. The 175C junction rating and avalanche capability tolerate the inrush energy when the inverter bulk capacitors re-engage. The lead-free PBF finish satisfies modern RoHS and REACH requirements for data-center UPS deployments.
Recommandé
Solenoid and Relay Driver
The IRF1407PBF drives high-current solenoids, contactors, and relays in industrial control panels and EV charging stations. Its 130A peak rating handles the inrush current of large solenoids, while the 7.8 mOhm RDS(on) keeps steady-state dissipation low in continuous-duty applications. The 75V VDS rating tolerates the inductive flyback when the solenoid is de-energized if a freewheeling diode or TVS is used. The TO-220AB package is mechanically robust for industrial through-hole assemblies and accepts standard screw-mount heatsinks.
Recommandé
High-Current Buck Converter Switch
The IRF1407PBF serves as the main switching FET or synchronous rectifier in 24V-to-12V buck converters delivering 30-80A to telecom and server loads. At 7.8 mOhm RDS(on) and 160 nC Qg, the figure-of-merit RDS(on) x Qg is competitive for a 75V part, allowing 100-150 kHz switching with reasonable efficiency. The TO-220AB package accepts a small clip-on heatsink or PCB copper pour to dissipate the 5-15W typical conduction loss. Use a gate driver capable of 1-2A source/sink current to switch the 160 nC gate charge within 50-100 ns.
Recommandé
Automotive 12V/24V Heavy-Duty Load Switch
The IRF1407PBF is suited to automotive 12V/24V heavy-duty load switches such as seat-heater controllers, fan drivers, and trailer-brake modules. The 75V VDS rating handles 24V load-dump transients up to 35V with margin, and the 130A continuous rating covers PTC heating elements and high-current fans. The repetitive-avalanche rating tolerates the unclamped inductive kick from solenoids and motors when a TVS is not used. Note that the standard IRF1407PBF is not AEC-Q100 qualified; for automotive designs requiring qualification, choose the IRFB3077PBF or IRFB4310PBF as a drop-in upgrade with automotive-grade screening.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IRF1407PBF — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IRFB3207PBF | IRF1404PBF | IRFB4110PBF | STP140NF75 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-Source Voltage (VDS) | 75 V | 75 V | 40 V | 100 V | 75 V |
| Continuous Drain Current (ID) | 130 A | 180 A | 162 A | 180 A | 130 A |
| RDS(on) at VGS=10V (typical) | 7.8 mOhm | 3.3 mOhm | 4.0 mOhm | 4.5 mOhm | 8.0 mOhm |
| Gate Charge (Qg) typical | 160 nC | 200 nC | 196 nC | 210 nC | 150 nC |
| Power Dissipation (PD) | 330 W | 330 W | 330 W | 370 W | 300 W |
| Maximum Junction Temperature | 175 C | 175 C | 175 C | 175 C | 175 C |
| RoHS / Lead-Free | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes |
Principaux différenciateurs
- Industry-lowest RDS(on) for 75V in TO-220AB (vs IRFB3207PBF)
- 75V VDS rating for 48V telecom/industrial buses (vs IRF1404PBF)
- TO-220AB pinout identical to STMicroelectronics STP140NF75 (vs STP140NF75)
Notes de conception
At full-load 130A conduction, the IRF1407PBF dissipates roughly P = I^2 x RDS(on) = 130^2 x 0.0078 = 132W. With TO-220AB thermal resistance around 62 C/W junction-to-ambient (no heatsink), junction temperature would rise above 175C in seconds. A clip-on heatsink with thermal resistance under 5 C/W, or a PCB copper-pour heatsink of at least 20 square inches, is required to keep Tj below 150C at 50-80A continuous. Estimated: calculation assumes steady-state DC conduction at TC=25C; refer to manufacturer SOA curve for pulse operation.
Keep the gate-drive loop (gate driver output to gate to source to gate-driver return) area under 1 square centimeter to minimize parasitic inductance that causes gate-oscillation and Miller-induced turn-on. Place a 10-100 Ohm gate-source resistor (Rgs) close to the FET pins to discharge the gate during power-down and prevent inadvertent turn-on from Miller current. Use a low-inductance TO-220 footprint with wide source and drain copper pours to handle 130A without excessive trace heating.
The IRF1407PBF is rated for 75V VDS, not 100V - do not use it on 80V+ telecom buses without derating. Standard IRF1407PBF is not AEC-Q100 qualified; for automotive designs use the AEC-Q100 screened IRFB3077PBF or IRFB4310PBF drop-in alternatives. The gate threshold is in the 2-4V range, so a logic-level gate drive (3.3V or 5V) is insufficient - use a 10V gate drive to guarantee full enhancement and minimum RDS(on).
For TO-220AB through-hole assembly, use a single-side or double-side 2 oz copper PCB with at least 1 oz copper pour on the drain and source pins to carry 130A continuous without exceeding 30C temperature rise. If a heatsink is mounted on the tab, use a thermal pad or insulator rated for the VDS voltage, and ensure the mounting screw is tightened to the datasheet torque specification (typically 6-8 in-lb) to maintain thermal contact. Place a TVS diode or RC snubber across the drain-source terminals when switching inductive loads.
Informations de conformité
Lead-free PBF finish per Infineon product page; RoHS compliant. Standard IRF1407PBF is NOT AEC-Q100 qualified - choose IRFB3077PBF or IRFB4310PBF for AEC-Q100 automotive designs.
