IRFS3107TRLPBF - 75V N-Channel MOSFET, 3mOhm | Infineon
MPN: IRFS3107TRLPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.44 | $5.44 |
| 10 | $4.89 | $48.90 |
| 100 | $4.35 | $435.00 |
| 500 | $3.92 | $1,960.00 |
| 1,000 | $3.48 | $3,480.00 |
Drop-in alternatives for IRFS3107TRLPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFS3107PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFS3006TRLPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFS3107TRLPBF Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| VDS Max | 75 V |
| ID Max (Tc) | 195 A |
| RDS(on) Max | 3 mOhm |
| Total Gate Charge (Qg) | 160 nC |
| Power Dissipation (Tc) | 370 W |
| Avalanche Energy (EAS) | 300 mJ |
| Package | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Technology | IR MOSFET |
| Operating Mode | Enhancement |
| Configuration | Single with built-in diode |
| Terminal Form | Gull Wing |
| Maximum Power Dissipation (Abs) | 370 W |
| RoHS Status | Compliant |
IRFS3107TRLPBF Pin Configuration
| Pin 1 | Gate β Gate terminal for controlling the MOSFET |
| Pin 2 | Drain β Drain terminal, connected to the heat sink tab |
| Pin 3 | Source β Source terminal |
Safe Operating Area
Typical Applications
IRFS3107TRLPBF is suitable for 6 applications: Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS), High-Speed Power Switching, Motor Drives, Battery Protection and Management, Server and Telecom Power Supplies.
Synchronous Rectification in SMPS
The IRFS3107TRLPBF is ideal for synchronous rectification in switched-mode power supplies due to its ultra-low RDS(on) of 3mOhm, which minimizes conduction losses. In a typical synchronous buck converter, this MOSFET replaces the freewheeling diode, improving efficiency by 2-5%. Its high current rating of 195A ensures it can handle the output current without overheating. The fast switching speed, enabled by a gate charge of 160nC, reduces switching losses, making it suitable for high-frequency operation up to 500kHz. When used in the low-side position, the low RDS(on) is critical for minimizing voltage drop and power dissipation. The D2PAK package allows efficient heat transfer to the PCB, ensuring reliable operation at high power levels.
Recommended
Uninterruptible Power Supply (UPS)
In UPS systems, the IRFS3107TRLPBF is used in the inverter stage to convert DC to AC. Its 75V VDS rating is suitable for 48V battery systems, and the 195A current capability handles high surge loads. The low RDS(on) reduces heat generation, allowing for smaller heatsinks and more compact designs. The device's avalanche energy rating of 300mJ ensures robustness against inductive spikes during switching. The fast switching speed improves the efficiency of the PWM inverter, reducing harmonic distortion. The D2PAK package is easy to mount on the PCB, and the low thermal resistance helps maintain safe operating temperatures during continuous operation. This MOSFET is also used in the battery charger section for efficient power conversion.
Recommended
High-Speed Power Switching
The IRFS3107TRLPBF is designed for high-speed power switching applications such as DC-DC converters and motor drives. Its low gate charge (160nC) and low RDS(on) (3mOhm) enable efficient switching at frequencies up to 1MHz. The device's fast body diode reduces reverse recovery losses, improving overall efficiency. In hard-switched circuits, the low output capacitance minimizes switching losses. The 75V VDS rating provides ample margin for 48V systems, and the 195A current rating supports high-power loads. The D2PAK package offers low parasitic inductance, which is crucial for high-frequency operation. This MOSFET is also suitable for synchronous buck converters in server and telecom power supplies, where efficiency and thermal performance are paramount.
Recommended
Motor Drives
In motor drive applications, the IRFS3107TRLPBF is used in the H-bridge or three-phase inverter to control the motor current. Its 195A current rating and 75V VDS make it suitable for low-voltage, high-current motors used in robotics, e-bikes, and power tools. The low RDS(on) minimizes conduction losses, improving the efficiency of the drive. The device's fast switching speed allows for precise PWM control, reducing torque ripple and noise. The avalanche energy rating ensures robustness against inductive spikes from the motor windings. The D2PAK package is suitable for PCB mounting, and the low thermal resistance helps dissipate heat generated during continuous operation. This MOSFET can be used in both low-side and high-side configurations with appropriate gate drivers.
Recommended
Battery Protection and Management
The IRFS3107TRLPBF is used in battery protection circuits for lithium-ion battery packs, where it acts as a disconnect switch to prevent overcurrent and overdischarge. Its low RDS(on) of 3mOhm minimizes voltage drop and power loss, maximizing battery runtime. The 75V VDS rating is suitable for multi-cell battery packs, and the 195A current rating handles high discharge currents. The device's fast switching speed enables quick response to fault conditions. The D2PAK package is compact and suitable for space-constrained designs. The MOSFET's low thermal resistance ensures reliable operation under high current loads. This component is also used in battery management systems (BMS) for electric vehicles and energy storage systems, where efficiency and reliability are critical.
Recommended
Server and Telecom Power Supplies
In server and telecom power supplies, the IRFS3107TRLPBF is used in the power factor correction (PFC) stage and DC-DC converters. Its 75V VDS rating is suitable for 48V bus voltages, and the 195A current rating supports high-power outputs. The low RDS(on) reduces conduction losses, improving overall efficiency and reducing cooling requirements. The fast switching speed enables high-frequency operation, reducing the size of magnetic components. The device's avalanche energy rating ensures robustness against voltage spikes. The D2PAK package is ideal for high-density PCB layouts, and the low thermal resistance helps manage heat in confined spaces. This MOSFET is also used in synchronous rectification to further improve efficiency in the output stage.
Recommended
Recommended Products Summary
Engineering reference data for IRFS3107TRLPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFS3107PBF | IRFS3006TRLPBF | IRFP4768PBF |
|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) | TO-247 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS Max | 75 V | 75 V | 60 V | 100 V |
| ID Max | 195 A | 195 A | 240 A | 93 A |
| RDS(on) Max | 3 mOhm | 3 mOhm | 2.5 mOhm | 8 mOhm |
| Qg | 160 nC | 160 nC | 180 nC | 220 nC |
| Power Dissipation | 370 W | 370 W | 380 W | 330 W |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Key Differentiators
- Ultra-low RDS(on) of 3mOhm (vs IRFP4768PBF)
- High current rating of 195A (vs IRFP4768PBF)
- Surface-mount D2PAK package (vs IRFP4768PBF)
Design Notes
The IRFS3107TRLPBF can dissipate up to 370W at Tc=25Β°C. In high-current applications, ensure the D2PAK package's thermal pad is soldered to a large copper area on the PCB. Use thermal vias to transfer heat to inner layers. For continuous operation at high currents, consider adding a heatsink or forced air cooling. The junction-to-case thermal resistance is typically 0.4Β°C/W, so proper heat sinking is critical to keep the junction temperature below 175Β°C.
For the D2PAK package, the drain tab is electrically connected to the drain terminal. Ensure adequate clearance between the drain tab and other copper traces to prevent short circuits. Use a gate resistor (e.g., 10Ξ©) to dampen ringing and reduce EMI. Place the gate driver as close as possible to the MOSFET to minimize parasitic inductance. Use a low-inductance layout for the gate drive loop to achieve fast switching without excessive overshoot.
Do not exceed the maximum VDS of 75V, as this can cause avalanche breakdown and damage the device. Ensure the gate drive voltage is at least 10V to achieve the specified RDS(on). Avoid operating the device in the linear region for extended periods, as this can cause excessive power dissipation. When paralleling multiple MOSFETs, use separate gate resistors to ensure current sharing. Always verify the thermal design under worst-case conditions to prevent thermal runaway.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified. Lead-free per datasheet.
