IRFZ44NSTRLPBF - 55V 49A N-Channel HEXFET MOSFET D2PAK | Infineon
Référence : IRFZ44NSTRLPBF ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.82 | $1,82 |
| 10 | $1.64 | $16,40 |
| 100 | $1.41 | $141,00 |
| 500 | $1.15 | $575,00 |
| 1 000 | $0.93 | $930,00 |
IRFZ44NSTRLPBF Présentation
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between the drain and source terminals. The N-Channel enhancement-mode variant requires a positive gate-source voltage to turn on, and belongs to the broader category of power transistors (MOSFET -> FET -> transistor -> discrete semiconductor). HEXFET is Infineon's trademarked process technology that places the source metal cells in a hexagonal pattern to maximize channel density and minimize on-resistance per unit silicon area.
Key features of the IRFZ44NSTRLPBF include extremely low on-resistance of 17.5 mOhm at VGS=10V, fast switching speed with 42 nC total gate charge, avalanche-rated ruggedness, and an operating temperature range of -55C to +175C. The D2PAK package provides a low thermal resistance path suitable for high-current PCB designs. The "STRLPBF" ordering code suffix indicates tape-and-reel packaging (STR), lead-free (Pb-free), and RoHS compliance.
The device uses Infineon's advanced planar HEXFET technology, achieving low RDS(on) through hexagonal cell geometry and a vertically-diffused DMOS structure. The 17.5 mOhm RDS(on) at 10V VGS minimizes conduction losses, while the 42 nC gate charge enables high-frequency PWM operation typically up to several hundred kHz.
Typical applications include DC motor drive circuits, solenoid and relay drivers, synchronous rectifiers in switch-mode power supplies (SMPS), low-side load switches in industrial automation, Class-D audio amplifiers, and uninterruptible power supplies (UPS). The wide safety margin between 49A rating and 17.5 mOhm RDS(on) makes it well-suited for high-current pulse applications such as automotive ECU drivers and battery management systems.
When designing with this MOSFET, ensure the gate drive voltage reaches at least 10V for full RDS(on) specification; logic-level signals may not fully enhance the channel. A low-impedance gate driver and proper gate resistor (typically 10-100 ohm) are recommended to control ringing and switching losses.
This page synthesizes distributor pricing, drop-in D2PAK alternatives, and practical design notes not found in the standalone manufacturer datasheet.
Alternatives de remplacement direct pour IRFZ44NSTRLPBF — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IRFZ44NSTRLPBF (même facteur de forme et même empreinte) — différant par Package, Technology, Operating Temperature Range, RoHS Status, Total Gate Charge (Qg).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IRFZ44NSPBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFZ44NSTRLPBF
✅ Remplacement direct✓ En stock
$0.93 / unité
Voir la fiche technique →IRFZ44NLPBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
FQP55N06
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NTP55N06
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
STB55NF06
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFZ44NSTRLPBF Valeurs maximales et caractéristiques électriques
| Polarity | N-Channel |
| MOSFET Operating Mode | Enhancement |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at TC | 49 A |
| Gate-Source Voltage (VGS) max | ±20 V |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V |
| Total Gate Charge (Qg) | 42 nC |
| Power Dissipation (TC) | 94 W |
| Power Dissipation (TA) | 3.8 W |
| Plage de température de fonctionnement | -55C to +175C |
| Boîtier | D2PAK (TO-263) |
| Type de montage | Surface Mount |
| Technology | HEXFET |
| Statut RoHS | Compliant |
| Lead-Free (PBF suffix) | Yes |
Configuration des broches de IRFZ44NSTRLPBF
| Broche 1 | Gate — Gate control input; drive with 10V for full enhancement |
| Broche 2 | Drain (Tab) — Drain terminal; also electrically connected to the metal tab for heatsinking |
| Broche 3 | Source — Source terminal; connect to circuit ground (low-side) or load return |
Zone de fonctionnement sûr (DC)
Applications typiques
IRFZ44NSTRLPBF convient pour 6 applications: DC Motor Drive (H-Bridge / Half-Bridge), Synchronous Rectifier in SMPS, Solenoid and Relay Driver (Low-Side Switch), Class-D Audio Amplifier Output Stage, Battery Management / Load Switch (UPS, e-Bike, Solar), Induction Heating / Resonant Power Converter.
DC Motor Drive (H-Bridge / Half-Bridge)
The IRFZ44NSTRLPBF's 49A continuous drain current and 17.5 mOhm RDS(on) make it well-suited for brushed DC motor drive stages up to approximately 1.5 kW at 24V supply. With 42 nC gate charge and avalanche-rated ruggedness, it tolerates the back-EMF spikes produced when switching inductive motor windings. In a 24V H-bridge driving a 20A continuous load, conduction loss per MOSFET is roughly P = I^2 x RDS(on) = 400 x 0.0175 = 7W, requiring substantial copper area on the D2PAK tab but no forced cooling below 50% duty cycle. Gate drive of 10V is easily produced by standard MOSFET driver ICs such as the IR2104. Compared to logic-level MOSFETs, the standard 10V gate threshold provides better noise margin in electrically noisy industrial environments.
Recommandé
Synchronous Rectifier in SMPS
In 24V-to-12V or 48V-to-12V buck converters below 30A output, the IRFZ44NSTRLPBF serves as a synchronous rectifier MOSFET replacing the traditional Schottky diode, reducing rectifier losses by approximately 60%. At 20A output current, the IRFZ44N's 17.5 mOhm RDS(on) dissipates only 7W versus 14W for a comparable Schottky diode at the same current. The 42 nC total gate charge supports switching frequencies up to 200 kHz when driven by a synchronous rectifier controller. Infineon's HEXFET technology provides adequate dv/dt immunity for SMPS environments. The D2PAK package footprint matches industry-standard synchronous rectifier layouts, enabling easy substitution in existing reference designs from manufacturers such as Texas Instruments and ON Semiconductor.
Recommandé
Solenoid and Relay Driver (Low-Side Switch)
The IRFZ44NSTRLPBF handles low-side switching of 12V/24V solenoids, valves, and relays commonly found in industrial automation and automotive systems. With 49A continuous rating and avalanche energy tolerance, the device survives the flyback pulse from a 1H inductor when the solenoid de-energizes, though an external freewheeling diode is still required. A freewheeling diode such as a 1N5408 across the solenoid clamp the inductive spike and protect the MOSFET from VDS overvoltage. At 5A continuous coil current, the MOSFET dissipates less than 0.5W, allowing surface-mount operation without heatsinking. Logic-level signal compatibility requires a gate driver stage because VGS(th) is typically 2-4V and full enhancement requires 10V.
Recommandé
Class-D Audio Amplifier Output Stage
The IRFZ44NSTRLPBF is well-suited as the output-stage MOSFET in 100-300W subwoofer Class-D amplifiers running from +/-25V or single 50V supplies. Its 17.5 mOhm RDS(on) provides output damping factor comparable to bipolar amplifiers, while the 42 nC gate charge supports modulation frequencies up to 500 kHz for proper audio band coverage. According to Infineon HEXFET datasheet parameters, the device's body diode reverse recovery is adequate for subwoofer-band PWM switching (typically 50-250 kHz). For full-range Class-D, the higher gate charge may limit efficiency; consider IRFB4110PBF (4.5 mOhm, 100V) instead. Pair the IRFZ44N with a gate driver such as IRS2092 for self-oscillating Class-D designs.
Recommandé
Battery Management / Load Switch (UPS, e-Bike, Solar)
The IRFZ44NSTRLPBF serves as a high-current load switch in 12V/24V battery management systems including e-bike controllers, solar charge regulators, and UPS battery disconnect circuits. At 49A continuous rating, it handles peak inverter loads of 1-2 kW from 24V battery banks with 17.5 mOhm RDS(on) minimizing voltage drop. In a typical 24V e-bike controller pulling 30A peak, the MOSFET dissipates roughly 16W, requiring a small heatsink or substantial D2PAK copper area. The 55V VDS rating provides margin above 24V nominal battery plus transient spikes during regenerative braking. Body diode forward drop (~1.3V) is acceptable for one-way load switching but bidirectional applications need a back-to-back MOSFET configuration.
Recommandé
Induction Heating / Resonant Power Converter
In zero-voltage-switching (ZVS) resonant converters and small induction cooktops, the IRFZ44NSTRLPBF's 42 nC gate charge and avalanche rating deliver reliable performance at 100-200 kHz switching frequencies. The HEXFET die provides low output capacitance (Coss in the 200-400 pF range) which integrates well with resonant tank circuits for soft-switching operation. Avalanche energy rating allows the MOSFET to absorb transient overvoltages from resonant tank detuning without external snubbers in many designs. For higher-frequency operation above 500 kHz, gate charge becomes limiting and a smaller MOSFET such as IRF7507 may be more appropriate. The D2PAK footprint simplifies heatsink mounting and paralleling for higher-power induction heating designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IRFZ44NSTRLPBF — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IRFZ44NSPBF | IRFZ44NLPBF | FQP55N06 | NTP55N06 | STB55NF06 |
|---|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-262) - same footprint | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | Infineon | Infineon - same | Infineon - same | onsemi | onsemi | STMicroelectronics |
| Drain-Source Voltage VDS | 55 V | 55 V - same | 55 V - same | 60 V (+9%) | 60 V (+9%) | 60 V (+9%) |
| Continuous Drain Current (TC=25C) | 49 A | 49 A - same | 49 A - same | 55 A (+12%) | 55 A (+12%) | 50 A (+2%) |
| On-Resistance RDS(on) max @ VGS=10V | 17.5 mOhm | 17.5 mOhm - same | 17.5 mOhm - same | 18 mOhm (+3%) | 18 mOhm (+3%) | 18 mOhm (+3%) |
| Total Gate Charge Qg | 42 nC | 42 nC - same | 42 nC - same | 48 nC (+14%) | 48 nC (+14%) | 45 nC (+7%) |
| RoHS Compliance | Yes (PBF suffix) | Yes - same | Yes - same | Yes | Yes | Yes |
| Approx. Unit Price @ Qty 100 | $1.41 | $1.45 | $1.40 | $1.30 | $1.25 | $1.20 |
Principaux différenciateurs
- Industry-standard 55V HEXFET die with broad cross-brand compatibility (vs FQP55N06 (onsemi))
- Lower gate charge (42 nC) than competing 55V D2PAK parts (vs FQP55N06 (48 nC), STB55NF06 (45 nC))
- Wide operating temperature range (-55C to +175C) (vs STB55NF06 (-55C to +150C))
- Mature, widely-distributed part with stable supply (vs Newer 55V MOSFETs)
Notes de conception
Estimated: at ID=20A continuous, RDS(on)=17.5 mOhm, conduction loss P = I^2 x RDS(on) = 400 x 0.0175 = 7W. The D2PAK package has theta_JC of approximately 1.5 C/W, giving a junction-to-case temperature rise of about 10.5C at this load. The D2PAK tab must be soldered to a minimum 1 square inch of 2oz copper on the PCB; smaller copper pours will trigger thermal shutdown at TJ=175C during continuous high-current operation. For applications drawing >25A continuous, add an external heatsink with thermal interface material.
The D2PAK tab is electrically connected to the Drain pin. Solder the tab to a copper pad that is also the drain circuit node, not an isolated heatsink. If using a topside heatsink, isolate it with a thermal pad (such as Bergquist Sil-Pad) and provide a clearance gap to prevent drain shorts to adjacent circuitry. Use wide PCB traces (at least 50 mil for 10A continuous) on the drain and source paths to minimize resistive losses and trace heating.
The IRFZ44NSTRLPBF is NOT a logic-level MOSFET - VGS(th) is typically 2-4V and full RDS(on) specification requires VGS=10V. Driving directly from a 3.3V or 5V microcontroller GPIO will leave the MOSFET in the linear region, causing excessive dissipation. Use a gate driver IC (TC4420, IR2104, or similar) to provide the 10V gate drive. Also ensure VGS never exceeds ±20V absolute maximum - add a 12V Zener diode between gate and source for protection against gate ESD and ringing transients.
Minimize the gate-driver-to-MOSFET-gate loop area to reduce parasitic inductance and ringing. Place the gate drive resistor (typically 10-100 ohm) close to the gate pin. Use a ground plane on the source side to provide a low-inductance return path for gate drive current. For switching frequencies above 100 kHz, keep the drain-source loop area minimal to reduce EMI and voltage overshoot.
Informations de conformité
RoHS compliant and lead-free per PBF suffix in MPN. Qualified for industrial market per Infineon datasheet. AEC-Q100 qualification status unknown - use automotive-grade parts such as IRFZ44NSTRLPBF-Q1 if required for automotive applications.
