MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP
Référence : MRF7S19120NR1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $89.5 | $895,00 |
| 50 | $84 | $4 200,00 |
| 100 | $78.5 | $7 850,00 |
| 500 | $73 | $36 500,00 |
MRF7S19120NR1 Présentation
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized MOSFET optimized for high-frequency, high-power amplification. The lateral structure places source, gate, and drain on the same surface, enabling low parasitic capacitance and high gain at UHF/microwave frequencies. Within the RF power device hierarchy, LDMOS sits alongside GaAs HEMT, GaN HEMT, and Si bipolar; LDMOS dominates sub-3 GHz base-station transmitter final stages because of its high breakdown voltage, high efficiency when driven in Class AB, and lower cost-per-watt than GaN at these frequencies. The MRF7S19120NR1 specifically targets W-CDMA, LTE-FDD Band 2/PCS, and similar 3GPP air interfaces that share the 1930-1990 MHz downlink allocation.
Key electrical features include 18 dB typical power gain at 1.99 GHz, 36 W average CW output power under W-CDMA modulation, 65 V minimum drain-source breakdown, and Class AB / Class C operating compatibility. The device is built on NXP's Gen7 HV8 LDMOS process, which combines high breakdown with reduced internal capacitances to maximize both gain and efficiency in Doherty and standard push-pull final-stage architectures used in macro-cell base stations.
Internally, the MRF7S19120NR1 integrates a single N-channel enhancement-mode lateral MOSFET die mounted on a ceramic / copper flange and overmolded in the TO-270 WB-4 footprint. Internal input and output matching networks are pre-tuned to the 1930-1990 MHz band, so external matching is limited to fine-tuning elements. The drain is connected through the package flange for low thermal impedance and direct PCB-to-heatsink mounting.
Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, LTE-FDD Band 2/PCS final stages, multi-carrier GSM/EDGE combiner amplifiers, and industrial RF heating. Designers favor this part for its high power density, repeatable performance across production lots, and drop-in compatibility with NXP's broader MRF7S family reference designs.
When designing with this device, ensure the heatsink/PCB thermal path maintains the flange temperature within the datasheet maximum; at 36 W average and roughly 50% efficiency, expect continuous dissipation on the order of 30-40 W requiring a substantial thermal mass. Always sequence gate bias before drain bias to prevent uncontrolled turn-on.
This page consolidates verified distributor pricing, drop-in NXP same-family alternatives, RF base-station application guidance, and packaging information beyond the bare manufacturer datasheet.
Alternatives de remplacement direct pour MRF7S19120NR1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF7S19120NR1 (même facteur de forme et même empreinte) — différant par Technology, Transistor Type, Mounting Type, Package, Test Frequency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF7S19120N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF7S19120NR1
✅ Remplacement direct✓ En stock
$73 / unité
Voir la fiche technique →MRF7S19170HSR3
✅ Remplacement direct✓ En stock
$99.4 / unité
Voir la fiche technique →MRF8S21200HSR6
✅ Remplacement direct✓ En stock
$96.75 / unité
Voir la fiche technique →MRF7S19120NR1 Valeurs maximales et caractéristiques électriques
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral |
| Technology | RF Power MOSFET (Gen7 HV8 LDMOS) |
| Frequency Range | 1930 MHz to 1990 MHz |
| Output Power (Avg, W-CDMA) | 36 W |
| Drain-Source Voltage (Vds max) | 65 V (rated) |
| Test Supply Voltage (Vdd) | 28 V |
| Test Quiescent Current (Idq) | 1.2 A |
| Power Gain (typ) | 18 dB at 1.99 GHz |
| Operating Class | Class AB, Class C |
| Boîtier | TO-270 WB-4 (overmolded plastic, 4-lead) |
| Style de montage | Surface Mount / Flange Mount |
| Nombre de broches | 5 (per Freescale/NXP datasheet) |
| Lead Free Status | Lead Free per datasheet |
| Target Modulation | W-CDMA, CDMA, multi-carrier GSM |
| Application | CDMA / W-CDMA base station final-stage PA |
Configuration des broches de MRF7S19120NR1
| Broche 1 | Gate — Gate input, internally bonded to pin 2 |
| Broche 2 | Gate — Gate input, internally bonded to pin 1 |
| Broche 3 | Drain (Flange) — Drain output and main thermal path through package body |
| Broche 4 | Source — Source, internally common with pin 5 |
| Broche 5 | Source — Source, internally common with pin 4 |
Zone de fonctionnement sûr (DC)
Applications typiques
MRF7S19120NR1 convient pour 6 applications: W-CDMA/UMTS Macro-Cell Base Station PA, LTE-FDD Band 2 / PCS Final-Stage Amplifier, Multi-Carrier GSM/EDGE Combiner Power Amplifier, CDMA2000 / 1xEV-DO Base Station Final Stage, Industrial RF Heating / Plasma Generator, Public-Safety / Tetra Base Station PA.
W-CDMA/UMTS Macro-Cell Base Station PA
The MRF7S19120NR1's 36 W average output power and 18 dB gain at 1.99 GHz make it a drop-in final-stage LDMOS for 3GPP-compliant macro-cell base-station power amplifiers covering the 1930-1990 MHz W-CDMA/UMTS downlink band. Placed at the output of a Doherty or Class AB driver chain, the part delivers sufficient linear power for 3-sector macro sites while its 65 V breakdown rating provides ruggedness against load VSWR mismatch. Its TO-270 WB-4 flange-mount package is bolted directly to the chassis heatsink, enabling continuous operation at full average power without active cooling. Compared with GaN HEMT, this LDMOS part provides lower cost-per-watt for sub-3 GHz high-volume cellular deployments.
Recommandé
LTE-FDD Band 2 / PCS Final-Stage Amplifier
LTE-FDD Band 2 (PCS 1900) and 3GPP Band 25 share the 1930-1990 MHz downlink, making MRF7S19120NR1 a natural fit for 4G LTE base-station final stages in North American PCS deployments. Its 18 dB gain and 28 V bias combine to deliver high power-added efficiency in Class AB or symmetric Doherty configurations, while the wideband linearity supports 10 MHz / 20 MHz LTE carriers without external digital pre-distortion. The flange-mount TO-270 WB-4 package spreads dissipated heat across a large PCB copper area, important for sustaining 36 W average output in tower-top electronics enclosures with limited airflow. Designers pair this part with NXP's MRFE6VS25N driver LDMOS for a complete 2-stage macro PA line-up.
Recommandé
Multi-Carrier GSM/EDGE Combiner Power Amplifier
Multi-carrier GSM/EDGE combiner amplifiers require broadband linearity across the 1930-1990 MHz band; the MRF7S19120NR1's 18 dB gain flatness and Class AB bias capability make it suitable for combining multiple GSM carriers into a single antenna feed. With proper output matching and digital pre-distortion, it can deliver 36 W average across a multi-carrier signal envelope while meeting ETSI spectral emission requirements. The device is ruggedized against high VSWR typical of combiner networks, where one carrier branch can present an open or short at the summing node during channel switching. Its TO-270 WB-4 ceramic flange construction provides the thermal headroom needed for sustained multi-carrier operation.
Recommandé
CDMA2000 / 1xEV-DO Base Station Final Stage
The cdma2000 and 1xEV-DO air interfaces share the 1930-1990 MHz cellular downlink band, and the MRF7S19120NR1 is explicitly characterized for these modulation formats per the Freescale/NXP datasheet. Its high peak-to-average ratio handling (approximately 6-7 dB for CDMA2000) and 18 dB gain support Class AB final stages without aggressive envelope tracking. Compared to older Gen5/Gen6 LDMOS parts, this Gen7 device delivers better gain and efficiency at the same 28 V bias, reducing overall PA power consumption in densely populated cellular networks.
Recommandé
Industrial RF Heating / Plasma Generator
Industrial RF heating at 1.99 MHz is uncommon, but 1930-1990 MHz ISM-adjacent bands are used for plasma generation, dielectric heating of ceramics, and certain medical ablation systems. The MRF7S19120NR1's 36 W continuous-wave capability, 65 V breakdown ruggedness, and TO-270 WB-4 flange-mount thermal performance make it a candidate for OEM RF generators where 1.99 GHz ISM-band operation is permitted. Its high gain simplifies driver-stage design, and its N-channel enhancement-mode structure allows simple bias sequencing. Industrial users should verify regulatory allocation in their jurisdiction before deployment.
Recommandé
Public-Safety / Tetra Base Station PA
Public-safety land-mobile radio networks operating in the 1930-1990 MHz band (TETRA, certain P25 trunked systems) use MRF7S19120NR1-class RF LDMOS parts for high-power linear final stages. The device's 36 W average, 18 dB gain, and ruggedness against antenna VSWR events make it suitable for mission-critical public-safety infrastructure where downtime is unacceptable. Its flange-mount package simplifies chassis integration and supports the elevated continuous-on operating duty cycle required by trunked radio networks.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF7S19120NR1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF7S19120N | MRF7S19170HSR3 | MRF8S21200HSR6 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270 WB-4 | TO-270 WB-4 - same | TO-270 NI-880S variant - same family | TO-270 NI-1230S variant - same family |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 2110-2170 MHz |
| Output Power (Avg) | 36 W | 36 W | 170 W (peak) | 50 W |
| Drain Voltage (Vdd) | 28 V | 28 V | 28 V | 28 V |
| Vds Breakdown | 65 V | 65 V | 65 V | 65 V |
Principaux différenciateurs
- Gen7 HV8 LDMOS optimized for 1930-1990 MHz W-CDMA (vs MRF7S19170HSR3)
- 1930-1990 MHz band-specific tuning (vs MRF8S21200HSR6)
- TO-270 WB-4 standard footprint (vs MRF7S19120N)
Notes de conception
Estimated: at 36 W average W-CDMA output, 50% efficiency, and 28 V Vdd, the device dissipates approximately 36 W of heat continuously. The TO-270 WB-4 ceramic flange must be bolted to a heatsink or chassis with thermal compound and a thermal resistance low enough to keep the flange below 100 C. Active cooling (forced airflow) is recommended for enclosed base-station enclosures; passive-only cooling requires a large external heatsink area.
Use a substrate with low RF loss (RO4350B or RO4003C, 0.508 mm or 0.762 mm thickness) for the matching networks. Place the gate and drain bias chokes and bypass capacitors as close to the package leads as possible. The drain tab/flange must be soldered (or bolted) to a continuous copper ground plane with low thermal resistance. Keep the input and output microstrip traces separated by at least 3x substrate thickness to minimize feedback.
Always sequence gate bias (Vgs) before applying drain voltage (Vdd) to prevent uncontrolled turn-on and possible device damage. Exceeding 65 V Vds - even transiently - will rupture the LDMOS die. Verify the load VSWR stays within the datasheet's mismatch tolerance; for base-station duty, design an isolator or circulator at the output to protect the transistor from antenna faults.
Match the input network to the source impedance recommended in the datasheet's reference design; the TO-270 WB-4 lead geometry sets a defined reference plane. Use bond-wire or ribbon replacement matched to the package leads to minimize parasitic inductance, especially on the gate lead where any series inductance can degrade stability. Place a small gate-series resistor (1-10 ohm) close to the gate lead to suppress parametric oscillation.
Informations de conformité
Lead-free per NXP datasheet family. RoHS and REACH compliance standard for NXP RF power discrete portfolio. AEC-Q100 not applicable (this is a discrete RF power transistor, not an automotive-grade IC).
