MRF7S19120NR1 vs MRF7S19170HSR3 Comparaison
Comparaison détaillée côte à côte de MRF7S19120NR1 par NXP Semiconductors et MRF7S19170HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP
MRF7S19170HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF7S19120NR1 | MRF7S19170HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $73,00 | $99,40 |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | RF Power MOSFET (Gen7 HV8 LDMOS) | HV7 LDMOS |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (Avg, W-CDMA) | 36 W | — |
| Drain-Source Voltage (Vds max) | 65 V (rated) | — |
| Test Supply Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 1.2 A | — |
| Power Gain (typ) | 18 dB at 1.99 GHz | 17.2 dB |
| Operating Class | Class AB, Class C | — |
| Boîtier | TO-270 WB-4 (overmolded plastic, 4-lead) | — |
| Style de montage | Surface Mount / Flange Mount | — |
| Nombre de broches | 5 (per Freescale/NXP datasheet) | — |
| Lead Free Status | Lead Free per datasheet | — |
| Target Modulation | W-CDMA, CDMA, multi-carrier GSM | — |
| Application | CDMA / W-CDMA base station final-stage PA | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Status (Rochester) | — | Active - Rochester Electronics LLC authorized stock |
| Frequency Band | — | 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900) |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (Max) | — | 65 V |
| Operating Drain Voltage | — | 28 V (typical) |
| Test Drain Current | — | 1.4 A |
| Output Power (Avg) | — | 50 W (W-CDMA) |
| Boîtier / Format | — | NI-880S (ceramic flange, bolt-down) |
| Type de montage | — | Chassis / Heatsink Mount (flange) |
| Operating Mode | — | Class AB / Class C |
| Modulation Supported | — | CDMA, W-CDMA, multi-carrier GSM, EDGE |
| Lead Finish | — | Ni-Au (lead-free compatible) |
| Statut RoHS | — | Compliant (per NXP product page) |