MT29F2G16ABAEAWP-IT:E - 2Gb SLC NAND Flash Parallel 48-TSOP | Micron
Référence : MT29F2G16ABAEAWP-IT:E ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.2 | $5,20 |
| 10 | $4.65 | $46,50 |
| 100 | $4.1 | $410,00 |
| 500 | $3.55 | $1 775,00 |
| 1 000 | $3.1 | $3 100,00 |
MT29F2G16ABAEAWP-IT:E Présentation
A NAND Flash memory is a non-volatile storage technology that retains data when power is removed, organized as blocks, pages, and bytes, and accessed through a command-driven asynchronous or synchronous interface. NAND sits hierarchically below DRAM in the memory taxonomy: volatile memory > non-volatile memory > Flash memory > NAND Flash > SLC NAND. SLC (single-level cell) stores one bit per cell, giving it 10x higher endurance and 10x lower bit error rate than MLC/TLC, making it the preferred choice for industrial, automotive, and mission-critical boot/storage applications.
Key features of the MT24F2G16ABAEAWP-IT:E include 25 ns typical page read time, ONFI 1.0 command set compatibility for portable, pin-aligned design reuse across vendors, internal data-move and copy-back operations that offload controller workload, and hardware block-locking for boot-region protection. The device supports multi-plane programming and read operations across two planes, enabling higher throughput when paired with a capable controller. Industrial temperature grade (-40C to +85C) operation is qualified per Micron's reliability flow for embedded and industrial markets.
The internal architecture combines a 2 KB / 1 KW page register with a 128-byte / 32-word cache register, enabling cache-mode read pipelines. The controller commands CE#, RE#, WE#, ALE, and CLE to issue address-latch and command-latch cycles, while eight-chip enable lines are available for multi-die stack expansion through CE# pin expansion. Built-in ECC status reporting via the status-read command assists the host controller in managing bit-flip rates across the device lifetime.
Typical applications include industrial HMI panels, factory automation controllers, automotive infotainment boot media, networking switch firmware storage, point-of-sale terminals, and ruggedized embedded Linux/Android file-system volumes. The wide temperature grade and SLC endurance make it well-suited for write-heavy logging in field-deployed systems. A key design consideration: the host controller must implement ONFI 1.0-compatible bad-block management and wear-leveling; the NAND device itself does not perform these functions transparently. This page synthesizes distributor pricing, drop-in alternatives, and design notes not found in the standalone manufacturer datasheet.
Alternatives de remplacement direct pour MT29F2G16ABAEAWP-IT:E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT29F2G16ABAEAWP-AIT:E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT29F2G16ABAEAWP-IT:E TR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT29F2G16ABAEAWP-AIT:E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT29F2G08ABAEAWP:E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT29F2G16ABAEAHWP-IT:E
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
TC58NVG1S3HTAI0
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT29F2G16ABAEAWP-IT:E Valeurs maximales et caractéristiques électriques
| Type de mémoire | FLASH - NAND (SLC) |
| Taille de mémoire | 2 Gbit (128 M x 16) |
| Organisation de la mémoire | 128 Mbit x 16 (x16 mode); 256 Mbit x 8 (x8 mode) |
| Interface | Parallel (asynchronous, ONFI 1.0) |
| Page Size (x8) | 2,112 bytes + 64 bytes spare |
| Page Size (x16) | 1,056 words + 32 words spare |
| Block Size | 64 pages per block |
| Core Supply Voltage (VCC) | 1.7 V to 1.95 V |
| I/O Supply Voltage | 3.3 V (typical, with 1.8 V tolerant I/O option) |
| Température de fonctionnement | -40C to +85C (Industrial) |
| Boîtier | 48-pin TSOP-I |
| Type de montage | Surface Mount |
| Technology | SLC (Single-Level Cell) NAND |
| ONFI Compliance | ONFI 1.0 |
| Endurance | 100K P/E cycles per block (typical SLC) |
| Data Retention | 10 years (typical) |
| Statut RoHS | Compliant |
Configuration des broches de MT29F2G16ABAEAWP-IT:E
| Broche 1 | NC — Not connected (per datasheet) |
| Broche 2 | NC — Not connected (per datasheet) |
| Broche 3 | NC — Not connected (per datasheet) |
| Broche 4 | NC — Not connected (per datasheet) |
| Broche 5 | NC — Not connected (per datasheet) |
| Broche 6 | NC — Not connected (per datasheet) |
| Broche 7 | RE# — Read Enable (active low) |
| Broche 8 | NC — Not connected (per datasheet) |
| Broche 9 | NC — Not connected (per datasheet) |
| Broche 10 | NC — Not connected (per datasheet) |
| Broche 11 | NC — Not connected (per datasheet) |
| Broche 12 | VSS — Ground |
| Broche 13 | VCC — Power supply (1.8V core) |
| Broche 14 | NC — Not connected (per datasheet) |
| Broche 15 | NC — Not connected (per datasheet) |
| Broche 16 | CLE — Command Latch Enable |
| Broche 17 | ALE — Address Latch Enable |
| Broche 18 | WE# — Write Enable (active low) |
| Broche 19 | WP# — Write Protect (active low) |
| Broche 20 | NC — Not connected (per datasheet) |
| Broche 21 | NC — Not connected (per datasheet) |
| Broche 22 | NC — Not connected (per datasheet) |
| Broche 23 | NC — Not connected (per datasheet) |
| Broche 24 | NC — Not connected (per datasheet) |
| Broche 25 | NC — Not connected (per datasheet) |
| Broche 26 | NC — Not connected (per datasheet) |
| Broche 27 | NC — Not connected (per datasheet) |
| Broche 28 | NC — Not connected (per datasheet) |
| Broche 29 | I/O8 — Data I/O bit 8 (x16 mode) |
| Broche 30 | I/O9 — Data I/O bit 9 (x16 mode) |
| Broche 31 | I/O10 — Data I/O bit 10 (x16 mode) |
| Broche 32 | I/O11 — Data I/O bit 11 (x16 mode) |
| Broche 33 | I/O12 — Data I/O bit 12 (x16 mode) |
| Broche 34 | I/O13 — Data I/O bit 13 (x16 mode) |
| Broche 35 | I/O14 — Data I/O bit 14 (x16 mode) |
| Broche 36 | I/O15 — Data I/O bit 15 (x16 mode) |
| Broche 37 | CE# — Chip Enable (active low) |
| Broche 38 | NC — Not connected (per datasheet) |
| Broche 39 | NC — Not connected (per datasheet) |
| Broche 40 | NC — Not connected (per datasheet) |
| Broche 41 | VSS — Ground |
| Broche 42 | VCCQ — I/O power supply (1.8V or 3.3V) |
| Broche 43 | NC — Not connected (per datasheet) |
| Broche 44 | I/O0 — Data I/O bit 0 |
| Broche 45 | I/O1 — Data I/O bit 1 |
| Broche 46 | I/O2 — Data I/O bit 2 |
| Broche 47 | I/O3 — Data I/O bit 3 |
| Broche 48 | I/O4-I/O7 — Data I/O bits 4-7 |
Applications typiques
MT29F2G16ABAEAWP-IT:E convient pour 6 applications: Industrial HMI / Factory Automation Controller Storage, Automotive Infotainment Boot Media, Networking Switch / Router Firmware Storage, Point-of-Sale (POS) Terminal Storage, Medical Device Data Logging, Ruggedized Embedded Linux/Android File System.
Industrial HMI / Factory Automation Controller Storage
The MT29F2G16ABAEAWP-IT:E provides 2 Gbit of SLC NAND storage for industrial HMI panels and PLC controllers that must retain firmware and runtime data across -40C to +85C operating envelopes. The 100K P/E cycle endurance per block supports write-heavy event logging typical in factory automation, while ONFI 1.0 compliance simplifies Linux UBI/UBIFS filesystem porting on Cortex-A host SoCs. Designers benefit from a 3.3 V-tolerant I/O bus that interfaces directly with legacy 3.3 V microcontrollers without level shifters, and from the parallel command/address/data interface that minimizes host-side pin count.
Recommandé
Automotive Infotainment Boot Media
For non-safety automotive subsystems such as infotainment head units and instrument cluster secondary displays, the MT29F2G16ABAEAWP-IT:E serves as reliable boot media storing the bootloader, kernel, and rootfs in a 2 Gbit density. SLC technology's 10x lower bit-error-rate versus MLC/TLC improves cold-boot reliability in the wide temperature swings of an automotive cabin. The 48-pin TSOP-I footprint allows direct migration to the AIT:E automotive-qualified variant when AEC-Q100 is mandated, preserving PCB layout and firmware across product variants.
Recommandé
Networking Switch / Router Firmware Storage
The MT29F2G16ABAEAWP-IT:E provides 256 MB of SLC NAND for managed Ethernet switches, industrial routers, and firewall appliances that need reliable firmware + configuration storage with predictable endurance. The parallel 16-bit interface pairs naturally with networking SoCs that have dedicated NAND controllers, and the ONFI 1.0 standard enables portable firmware builds across switch product families. Industrial temperature rating ensures field-deployed switches in outdoor enclosures survive thermal extremes, while the 10-year data-retention specification preserves configuration across power-cycle events common in edge networking deployments.
Recommandé
Point-of-Sale (POS) Terminal Storage
POS terminals in retail environments demand non-volatile storage that survives years of transaction logging, sudden power-loss events, and thermal stress from enclosed housings. The MT29F2G16ABAEAWP-IT:E delivers 100K P/E cycle endurance per block to absorb high-write-rate journaling filesystems like JFFS2 or UBIFS, and its ONFI 1.0 compliance streamlines Linux porting on common POS SoCs. The 48-pin TSOP-I surface-mount package simplifies rework during long-lifecycle POS deployments, and the 10-year retention specification protects transaction audit logs across extended service intervals.
Recommandé
Medical Device Data Logging
Medical monitoring devices such as portable patient monitors, infusion pumps, and diagnostic instruments require non-volatile storage with predictable endurance and retention over multi-year product lifetimes. The MT29F2G16ABAEAWP-IT:E provides 2 Gbit of SLC storage suitable for storing device calibration logs, patient event records, and firmware images. SLC's 100K P/E cycle endurance handles continuous data-logging workloads, while the industrial temperature rating supports operation in clinical environments with varying ambient conditions. Designers must implement appropriate firmware-level wear-leveling and bad-block management per ONFI 1.0 specification.
Recommandé
Ruggedized Embedded Linux/Android File System
Embedded systems running Linux or Android in ruggedized enclosures - such as outdoor digital signage, transportation displays, and field-deployed IoT gateways - benefit from the MT29F2G16ABAEAWP-IT:E's 2 Gbit SLC NAND capacity and industrial temperature rating. The parallel x16 interface enables high-throughput filesystem operations needed for compressed rootfs and persistent data partitions, while ONFI 1.0 standardizes bad-block management for stable UBIFS deployments. The 48-pin TSOP-I footprint remains compatible with industrial reflow profiles, and the device's 10-year data retention preserves configuration across extended field deployments without battery backup.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT29F2G16ABAEAWP-IT:E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT29F2G16ABAEAWP-AIT:E | MT29F2G16ABAEAWP-IT:E TR | MT29F2G08ABAEAWP:E | MT29F2G16ABAEAHWP-IT:E | TC58NVG1S3HTAI0 |
|---|---|---|---|---|---|---|
| Package | 48-pin TSOP-I | 48-pin TSOP-I - same | 48-pin TSOP-I - same | 48-pin TSOP-I - same | 48-pin TSOP-I - same | 48-pin TSOP-I - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Toshiba / Kioxia |
| Density | 2 Gbit | 2 Gbit | 2 Gbit | 2 Gbit | 2 Gbit | 2 Gbit |
| Organization | 128M x 16 (x16 mode) | 128M x 16 | 128M x 16 | 256M x 8 (x8 only) | 128M x 16 | 128M x 16 |
| Technology | SLC (Single-Level Cell) | SLC | SLC | SLC | SLC | SLC |
| Operating Temperature | -40C to +85C (Industrial) | -40C to +105C (Automotive) | -40C to +85C (Industrial) | 0C to +70C (Commercial) | -40C to +85C (Industrial) | -40C to +85C (Industrial) |
| AEC-Q100 Qualification | No (industrial only) | Yes (AEC-Q100) | No | No | No | No |
| ONFI Compliance | ONFI 1.0 | ONFI 1.0 | ONFI 1.0 | ONFI 1.0 | ONFI 1.0 | Toggle / ONFI-compatible |
| VCC Supply | 1.7 V to 1.95 V | 1.7 V to 1.95 V | 1.7 V to 1.95 V | 1.7 V to 1.95 V | 1.7 V to 1.95 V | 2.7 V to 3.6 V (3.3V part) |
Principaux différenciateurs
- Industrial temperature grade (-40C to +85C) at 2 Gbit x16 SLC density in standard 48-pin TSOP-I (vs MT29F2G08ABAEAWP:E)
- AEC-Q100 qualified sibling available with identical pinout (vs MT29F2G16ABAEAWP-AIT:E)
- ONFI 1.0 standardization enables cross-vendor firmware portability (vs TC58NVG1S3HTAI0 (Toshiba/Kioxia))
Notes de conception
The host controller must implement ONFI 1.0-compatible bad-block management and wear-leveling - the NAND device does not perform these functions transparently. Initial bad blocks are marked in the factory and must be scanned at first power-up using the Read ID + Bad Block scan command sequence. Failure to implement wear-leveling leads to premature block retirement in write-heavy applications like journaling filesystems.
Route the 16-bit I/O bus (DQ0-DQ15) with matched trace lengths, ideally within 50 mil (1.27 mm) of each other, to preserve signal integrity at maximum bus rates. Place the MT29F2G16ABAEAWP-IT:E within 25 mm of the host SoC's NAND controller pins and add 0.1 uF + 4.7 uF decoupling capacitors adjacent to VCC and VCCQ pins to suppress switching transients during page-program operations.
The RE# (Read Enable) and WE# (Write Enable) signals should be terminated with 33-ohm series resistors close to the driver when bus lengths exceed 50 mm to dampen reflections. Add a 10K pull-up resistor on WP# (Write Protect) to prevent accidental write protection during power-up glitches. The CLE/ALE/RE#/WE# control signals must satisfy the Micron datasheet's tCS, tALS, tDS, and tDH timing parameters relative to the host SoC's NAND controller clock domain.
Informations de conformité
RoHS compliant per Micron product page. Industrial grade (IT) only - for AEC-Q100 qualified parts choose AIT:E variant. Conflict-minerals compliant per Micron CMRT declarations.
