MT47H64M16NF-25E - 1Gb DDR2 SDRAM 400MHz x16 | Micron
Référence : MT47H64M16NF-25E ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $6.16 | $6,16 |
| 10 | $5.85 | $58,50 |
| 100 | $5.42 | $542,00 |
| 500 | $5.02 | $2 510,00 |
| 1 000 | $4.65 | $4 650,00 |
MT47H64M16NF-25E Présentation
DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random Access Memory) is a type of DRAM that transfers data on both rising and falling edges of the clock, doubling bandwidth compared to DDR1 at the same clock frequency. Within the memory hierarchy it sits as a main-memory component: DRAM -> synchronous DRAM -> DDR SDRAM -> DDR2 SDRAM, used between a processor/memory controller and mass storage. DDR2 introduced a 4n-bit prefetch architecture and on-die termination (ODT) relative to DDR1.
Key features of the MT47H64M16NF-25E include 8 internal banks, a 4n-bit prefetch architecture, VDD and VDDQ of 1.8V +/-0.1V with JEDEC-standard SSTL_18-compatible I/O, differential data strobe (DQS/DQS#) support, duplicate output strobe (RDQS) option, data mask (DM) functionality, auto precharge, and dynamic on-die termination that reduces signal reflections on high-speed buses.
Technically, the -25E speed grade runs at DDR2-800 (CL5 at 400 MHz), with the x16 organization giving a 16-bit wide data bus for a peak bandwidth of 1.6 GB/s per device. The E die revision and FBGA (NF) package provide reliable ball-bond interconnects suitable for automated assembly. The IT suffix on the industrial variant extends the operating range to -40C to +95C.
Typical applications include embedded processor and SoC main memory, industrial control and networking equipment, set-top boxes, test instrumentation, and legacy DDR2 controller designs requiring proven JEDEC DDR2 interface compatibility.
When designing with this device, use SSTL_18 terminated layouts with length-matched address/command traces and reference VREF at VDD/2; the ODT settings must be programmed to match board impedance to preserve signal integrity at 400 MHz.
This page synthesizes distributor pricing, drop-in DDR2 alternatives from Micron, SK Hynix, Samsung and Nanya, and practical DDR2 design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour MT47H64M16NF-25E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT47H64M16NF-25E (même facteur de forme et même empreinte) — différant par Mounting Type, Organization, Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT47H64M16NF-25E:M
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT47H64M16NF-25E IT:M
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT47H32M16NF-25E:H
✅ Remplacement direct✓ En stock
$7.73 / unité
Voir la fiche technique →HY5PS1G1631C
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4T1G164QF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NT5TU64M16HG-AC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT47H64M16NF-25E Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR2 SDRAM |
| Taille de mémoire | 1 Gbit |
| Organisation de la mémoire | 64M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Débit de données | DDR2-800 (400 ps) |
| Speed Grade | -25E |
| Number of Banks | 8 banks |
| Prefetch Architecture | 4n-bit |
| VDD Supply Voltage | 1.8 V +/-0.1 V |
| VDDQ Supply Voltage | 1.8 V +/-0.1 V |
| I/O Interface Standard | SSTL_18-compatible (JEDEC 1.8V) |
| Caractéristiques | Differential DQS, RDQS duplicate output strobe, DM data mask, auto precharge, dynamic ODT |
| Température de fonctionnement | -40C to +95C (IT: industrial) |
| Boîtier | 84-FBGA (8 mm x 12.5 mm) |
| Type de montage | Surface Mount (BGA) |
| Part Status | Production |
Guide de configuration des broches du MT47H64M16NF-25E 84-fbga (8 mm x 12.5 mm)
Configuration des broches du MT47H64M16NF-25E (boîtier 84-fbga (8 mm x 12.5 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour MT47H64M16NF-25E.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT47H64M16NF-25E convient pour 6 applications: Embedded Processor Main Memory, Industrial Control and Automation, Networking and Communication Equipment, Set-Top Box and Consumer Video Platforms, Test and Measurement Instrumentation, Legacy DDR2 FPGA Systems and Design Sustainment.
Embedded Processor Main Memory
The MT47H64M16NF-25E serves as main system memory for embedded processors and SoCs with DDR2 memory controllers, delivering 1Gbit of storage with 1.6 GB/s peak bandwidth per device at DDR2-800. Its JEDEC SSTL_18 interface, differential DQS strobes, and dynamic ODT align directly with hardened DDR2 controller IP in industrial SoCs, giving plug-compatible operation with standard controller initialization sequences. In a typical single-device layout, the x16 bus connects to the SoC DQ pins with length-matched fly-by or tree routing and 0.9V VREF, and the 1Gbit density comfortably hosts Linux-class workloads. Because the part remains in production, new embedded board designs can still standardize on proven DDR2 platforms.
Recommandé
Industrial Control and Automation
In PLCs, motion controllers, and factory automation gateways, the MT47H64M16NF-25E IT:M variant provides DDR2 main memory rated from -40C to +95C, matching the temperature envelope of industrial electronics cabinets. The 1Gbit x16 device supplies 1.6 GB/s peak bandwidth for control-loop data buffering, HMI frame stores, and protocol stacks, while dynamic ODT keeps signal integrity robust across the wide temperature span. Its 1.8V SSTL_18 signaling limits bus switching noise relative to older 2.5V DDR1 interfaces, easing EMI compliance in noisy factory environments. Designers should verify controller ODT programming and refresh scheduling (tREFI) at the elevated ambient extremes per the Micron datasheet derating tables.
Recommandé
Networking and Communication Equipment
Routers, switches, and line-card processors of the DDR2 era rely on 1Gbit x16 DDR2 SDRAM such as the MT47H64M16NF-25E for packet buffering, routing-table storage, and CPU working memory. The DDR2-800 data rate yields 1.6 GB/s per device, and multiple devices can be rank- or bank-interleaved on a shared 64-bit bus to multiply effective bandwidth for line-rate forwarding. Differential DQS strobes with source-synchronous capture and per-byte DM masking support efficient read-modify-write packet operations. The 84-ball FBGA with 8 mm x 12.5 mm body allows dense multi-device layouts on switch boards, and the industrial IT grade covers telecom equipment temperature requirements.
Recommandé
Set-Top Box and Consumer Video Platforms
Set-top boxes, IPTV clients, and digital TV platforms built on DDR2-based SoCs use the MT47H64M16NF-25E as the primary frame-buffer and application memory. The 1Gbit capacity stores decoded video frames, OSD graphics layers, and middleware stacks, while the x16 organization minimizes bus width and PCB layers for cost-sensitive consumer hardware. DDR2-800 bandwidth of 1.6 GB/s per device sustains 1080p-class decode workloads of the era, and auto precharge with burst Chop options optimizes random access patterns typical of video render pipelines. The 1.8V core and I/O rails simplify single-rail power design with common DC-DC buck converters.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and data acquisition systems use DDR2 SDRAM like the MT47H64M16NF-25E for deep capture memory and waveform record length extension. The 1Gbit x16 device provides 1.6 GB/s streaming bandwidth with source-synchronous DQS capture supporting deterministic read timing, and data mask (DM) allows byte-granular write control when logging sampled channels with gaps. Industrial IT temperature grading (-40C to +95C) suits benchtop and portable instruments deployed in varied environments. Designers should implement controller refresh aware capture-pause windows, since DDR2 periodic refresh (tREFI ~7.8 us class) briefly stalls the data path - schedule capture gaps accordingly per the Micron datasheet.
Recommandé
Legacy DDR2 FPGA Systems and Design Sustainment
FPGA platforms from the DDR2 generation use hardened or soft DDR2 memory controllers to attach the MT47H64M16NF-25E for co-processor buffering, image pipelines, and algorithm acceleration scratch memory. The JEDEC SSTL_18 interface and standard DDR2 register set mean the device works with mainstream memory-controller generation tools without custom PHY changes, and ODT on the DRAM side reduces external termination components versus DDR1 designs. For sustaining engineering on shipped products, using this production-status Micron part avoids last-time-buy risk. Verify controller speed-grade settings (CL5 at DDR2-800, 400 MHz) and ODT impedance options against the current Micron datasheet revision during requalification.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT47H64M16NF-25E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT47H64M16NF-25E:M | MT47H32M16NF-25E:H | HY5PS1G1631C | K4T1G164QF | NT5TU64M16HG-AC |
|---|---|---|---|---|---|---|
| Package | 84-FBGA (8x12.5 mm) | 84-FBGA (8x12.5) - same | 84-FBGA (8x12.5) - same | 84-FBGA (8x12.5) - same | 84-FBGA (8x12.5) - same | 84-FBGA (8x12.5) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | SK Hynix | Samsung Electronics | Nanya Technology |
| Density / Organization | 1 Gbit, 64M x16 | 1 Gbit, 64M x16 | 512 Mb, 32M x16 | 1 Gbit, 64M x16 | 1 Gbit, 64M x16 | 1 Gbit, 64M x16 |
| VDD / VDDQ | 1.8 V +/-0.1 V | 1.8 V +/-0.1 V | 1.8 V +/-0.1 V | 1.8 V (JEDEC DDR2) | 1.8 V (JEDEC DDR2) | 1.8 V (JEDEC DDR2) |
| I/O Standard | SSTL_18 (JEDEC 1.8V) | SSTL_18 | SSTL_18 | SSTL_18 | SSTL_18 | SSTL_18 |
Principaux différenciateurs
- Industrial temperature grading to +95C (vs MT47H64M16NF-25E:M)
- Full 1Gbit density in x16 organization (vs MT47H32M16NF-25E:H)
- Production status with documented cross-brand equivalents (vs HY5PS1G1631C)
Notes de conception
Route the DDR2-800 (400 MHz) bus with SSTL_18 signaling: match DQ/DM/DQS trace lengths within group skew budgets, use fly-by routing for address/command with proper termination, and reference all layers to a solid ground plane. Enable ODT on both the controller and the MT47H64M16NF-25E, selecting die termination values (per the JEDEC DDR2 options in the EMR) that match the board's controlled impedance - typically 50 ohm single-ended. Place a 0.9V VREF divider (VDD/2) close to the DRAM with 0.1 uF decoupling; VREF ripple directly reduces read/write eye margin.
VDD and VDDQ are both 1.8V +/-0.1V per the datasheet; decouple each ball group with a network of at least 0.1 uF and 10 uF ceramic capacitors placed within a few millimeters of the FBGA power balls. The VTT termination rail (0.9V) can carry significant transient current on a terminated x16 bus, so size the VTT LDO or switching converter with adequate peak current and place bulk capacitance near the termination network. Estimated: an x16 DDR2-800 bus terminated at 50 ohm can draw tens of milliamps to ~100 mA peak per line during simultaneous switching, so budget VTT headroom accordingly.
DDR2 requires a controller-driven initialization sequence: 200 us stable-clock wait, precharge-all, EMR2/EMR3 programming, EMR (DLL enable, ODT), MMR with DLL reset, then precharge-all and two refresh cycles before normal operation - follow the sequence in the Micron 1Gb DDR2 datasheet exactly or the DLL will not lock. Also remember periodic auto-refresh (tREFI roughly 7.8 us class) and do not omit the ZQ-free DDR2 note: unlike DDR3 there is no ZQ calibration, but ODT values must still be programmed. Cross-brand swaps (SK Hynix, Samsung, Nanya) must be revalidated for speed suffix and register compatibility even with the same JEDEC ball map.
DRAM junction temperature scales with refresh rate and utilization. For sustained operation near the +95C industrial limit of the IT:M grade, verify the case temperature versus airflow in the enclosure and consider whether the controller implements the extended temperature refresh multiplier (doubling refresh rate above 85C class limits) specified in JEDEC DDR2. Reduced activity derating and modest airflow are usually sufficient for 1Gbit x16 devices at moderate utilization, but closed cabinets at high ambient require thermal analysis before final qualification.
Informations de conformité
The M suffix in Micron part numbering denotes RoHS/lead-free packaging (per Micron part listings on DigiKey/Mouser). REACH, halogen-free, and conflict-minerals status should be confirmed via Micron's official compliance documentation for the specific date code.
