MT47H64M16NF-25E - 1Gb DDR2 SDRAM 400MHz x16 | Micron
MPN： MT47H64M16NF-25E ✓ 啟用中MT47H64M16NF-25E 概覽
DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random Access Memory) is a type of DRAM that transfers data on both rising and falling edges of the clock, doubling bandwidth compared to DDR1 at the same clock frequency. Within the memory hierarchy it sits as a main-memory component: DRAM -> synchronous DRAM -> DDR SDRAM -> DDR2 SDRAM, used between a processor/memory controller and mass storage. DDR2 introduced a 4n-bit prefetch architecture and on-die termination (ODT) relative to DDR1.
Key features of the MT47H64M16NF-25E include 8 internal banks, a 4n-bit prefetch architecture, VDD and VDDQ of 1.8V +/-0.1V with JEDEC-standard SSTL_18-compatible I/O, differential data strobe (DQS/DQS#) support, duplicate output strobe (RDQS) option, data mask (DM) functionality, auto precharge, and dynamic on-die termination that reduces signal reflections on high-speed buses.
Technically, the -25E speed grade runs at DDR2-800 (CL5 at 400 MHz), with the x16 organization giving a 16-bit wide data bus for a peak bandwidth of 1.6 GB/s per device. The E die revision and FBGA (NF) package provide reliable ball-bond interconnects suitable for automated assembly. The IT suffix on the industrial variant extends the operating range to -40C to +95C.
Typical applications include embedded processor and SoC main memory, industrial control and networking equipment, set-top boxes, test instrumentation, and legacy DDR2 controller designs requiring proven JEDEC DDR2 interface compatibility.
When designing with this device, use SSTL_18 terminated layouts with length-matched address/command traces and reference VREF at VDD/2; the ODT settings must be programmed to match board impedance to preserve signal integrity at 400 MHz.
This page synthesizes distributor pricing, drop-in DDR2 alternatives from Micron, SK Hynix, Samsung and Nanya, and practical DDR2 design notes not found in the manufacturer datasheet.
直接替換替代品，適用於 MT47H64M16NF-25E — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MT47H64M16NF-25E （相同外形與佔位） — 差異在於 Mounting Type, Organization, Package.
MT47H64M16NF-25E:M
✅ 直接替換📋 參考替代品（不在目錄中）
MT47H64M16NF-25E IT:M
✅ 直接替換📋 參考替代品（不在目錄中）
MT47H32M16NF-25E:H
✅ 直接替換聯絡詢價
查看資料表 →HY5PS1G1631C
✅ 直接替換📋 參考替代品（不在目錄中）
K4T1G164QF
✅ 直接替換📋 參考替代品（不在目錄中）
NT5TU64M16HG-AC
✅ 直接替換📋 參考替代品（不在目錄中）
MT47H64M16NF-25E 最大額定值與電氣特性
| 記憶體類型 | DDR2 SDRAM |
| 記憶體容量 | 1 Gbit |
| 組織 | 64M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| 資料速率 | DDR2-800 (400 ps) |
| Speed Grade | -25E |
| Number of Banks | 8 banks |
| Prefetch Architecture | 4n-bit |
| VDD Supply Voltage | 1.8 V +/-0.1 V |
| VDDQ Supply Voltage | 1.8 V +/-0.1 V |
| I/O Interface Standard | SSTL_18-compatible (JEDEC 1.8V) |
| 功能特色 | Differential DQS, RDQS duplicate output strobe, DM data mask, auto precharge, dynamic ODT |
| 工作溫度 | -40C to +95C (IT: industrial) |
| 封裝 | 84-FBGA (8 mm x 12.5 mm) |
| 安裝類型 | Surface Mount (BGA) |
| Part Status | Production |
MT47H64M16NF-25E 84-fbga (8 mm x 12.5 mm) 腳位配置指南
MT47H64M16NF-25E（84-fbga (8 mm x 12.5 mm) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： MT47H64M16NF-25E.
請參閱 資料表 以查看完整腳位配置。
典型應用
MT47H64M16NF-25E 適用於 6 應用s: Embedded Processor Main Memory, Industrial Control and Automation, Networking and Communication Equipment, Set-Top Box and Consumer Video Platforms, Test and Measurement Instrumentation, Legacy DDR2 FPGA Systems and Design Sustainment.
Embedded Processor Main Memory
The MT47H64M16NF-25E serves as main system memory for embedded processors and SoCs with DDR2 memory controllers, delivering 1Gbit of storage with 1.6 GB/s peak bandwidth per device at DDR2-800. Its JEDEC SSTL_18 interface, differential DQS strobes, and dynamic ODT align directly with hardened DDR2 controller IP in industrial SoCs, giving plug-compatible operation with standard controller initialization sequences. In a typical single-device layout, the x16 bus connects to the SoC DQ pins with length-matched fly-by or tree routing and 0.9V VREF, and the 1Gbit density comfortably hosts Linux-class workloads. Because the part remains in production, new embedded board designs can still standardize on proven DDR2 platforms.
推薦
Industrial Control and Automation
In PLCs, motion controllers, and factory automation gateways, the MT47H64M16NF-25E IT:M variant provides DDR2 main memory rated from -40C to +95C, matching the temperature envelope of industrial electronics cabinets. The 1Gbit x16 device supplies 1.6 GB/s peak bandwidth for control-loop data buffering, HMI frame stores, and protocol stacks, while dynamic ODT keeps signal integrity robust across the wide temperature span. Its 1.8V SSTL_18 signaling limits bus switching noise relative to older 2.5V DDR1 interfaces, easing EMI compliance in noisy factory environments. Designers should verify controller ODT programming and refresh scheduling (tREFI) at the elevated ambient extremes per the Micron datasheet derating tables.
推薦
Networking and Communication Equipment
Routers, switches, and line-card processors of the DDR2 era rely on 1Gbit x16 DDR2 SDRAM such as the MT47H64M16NF-25E for packet buffering, routing-table storage, and CPU working memory. The DDR2-800 data rate yields 1.6 GB/s per device, and multiple devices can be rank- or bank-interleaved on a shared 64-bit bus to multiply effective bandwidth for line-rate forwarding. Differential DQS strobes with source-synchronous capture and per-byte DM masking support efficient read-modify-write packet operations. The 84-ball FBGA with 8 mm x 12.5 mm body allows dense multi-device layouts on switch boards, and the industrial IT grade covers telecom equipment temperature requirements.
推薦
Set-Top Box and Consumer Video Platforms
Set-top boxes, IPTV clients, and digital TV platforms built on DDR2-based SoCs use the MT47H64M16NF-25E as the primary frame-buffer and application memory. The 1Gbit capacity stores decoded video frames, OSD graphics layers, and middleware stacks, while the x16 organization minimizes bus width and PCB layers for cost-sensitive consumer hardware. DDR2-800 bandwidth of 1.6 GB/s per device sustains 1080p-class decode workloads of the era, and auto precharge with burst Chop options optimizes random access patterns typical of video render pipelines. The 1.8V core and I/O rails simplify single-rail power design with common DC-DC buck converters.
推薦
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and data acquisition systems use DDR2 SDRAM like the MT47H64M16NF-25E for deep capture memory and waveform record length extension. The 1Gbit x16 device provides 1.6 GB/s streaming bandwidth with source-synchronous DQS capture supporting deterministic read timing, and data mask (DM) allows byte-granular write control when logging sampled channels with gaps. Industrial IT temperature grading (-40C to +95C) suits benchtop and portable instruments deployed in varied environments. Designers should implement controller refresh aware capture-pause windows, since DDR2 periodic refresh (tREFI ~7.8 us class) briefly stalls the data path - schedule capture gaps accordingly per the Micron datasheet.
推薦
Legacy DDR2 FPGA Systems and Design Sustainment
FPGA platforms from the DDR2 generation use hardened or soft DDR2 memory controllers to attach the MT47H64M16NF-25E for co-processor buffering, image pipelines, and algorithm acceleration scratch memory. The JEDEC SSTL_18 interface and standard DDR2 register set mean the device works with mainstream memory-controller generation tools without custom PHY changes, and ODT on the DRAM side reduces external termination components versus DDR1 designs. For sustaining engineering on shipped products, using this production-status Micron part avoids last-time-buy risk. Verify controller speed-grade settings (CL5 at DDR2-800, 400 MHz) and ODT impedance options against the current Micron datasheet revision during requalification.
推薦
推薦產品摘要
工程參考資料，適用於 MT47H64M16NF-25E — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MT47H64M16NF-25E:M | MT47H32M16NF-25E:H | HY5PS1G1631C | K4T1G164QF | NT5TU64M16HG-AC |
|---|---|---|---|---|---|---|
| Package | 84-FBGA (8x12.5 mm) | 84-FBGA (8x12.5) - same | 84-FBGA (8x12.5) - same | 84-FBGA (8x12.5) - same | 84-FBGA (8x12.5) - same | 84-FBGA (8x12.5) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | SK Hynix | Samsung Electronics | Nanya Technology |
| Density / Organization | 1 Gbit, 64M x16 | 1 Gbit, 64M x16 | 512 Mb, 32M x16 | 1 Gbit, 64M x16 | 1 Gbit, 64M x16 | 1 Gbit, 64M x16 |
| VDD / VDDQ | 1.8 V +/-0.1 V | 1.8 V +/-0.1 V | 1.8 V +/-0.1 V | 1.8 V (JEDEC DDR2) | 1.8 V (JEDEC DDR2) | 1.8 V (JEDEC DDR2) |
| I/O Standard | SSTL_18 (JEDEC 1.8V) | SSTL_18 | SSTL_18 | SSTL_18 | SSTL_18 | SSTL_18 |
主要差異化特點
- Industrial temperature grading to +95C (對比MT47H64M16NF-25E:M)
- Full 1Gbit density in x16 organization (對比MT47H32M16NF-25E:H)
- Production status with documented cross-brand equivalents (對比HY5PS1G1631C)
設計說明
Route the DDR2-800 (400 MHz) bus with SSTL_18 signaling: match DQ/DM/DQS trace lengths within group skew budgets, use fly-by routing for address/command with proper termination, and reference all layers to a solid ground plane. Enable ODT on both the controller and the MT47H64M16NF-25E, selecting die termination values (per the JEDEC DDR2 options in the EMR) that match the board's controlled impedance - typically 50 ohm single-ended. Place a 0.9V VREF divider (VDD/2) close to the DRAM with 0.1 uF decoupling; VREF ripple directly reduces read/write eye margin.
VDD and VDDQ are both 1.8V +/-0.1V per the datasheet; decouple each ball group with a network of at least 0.1 uF and 10 uF ceramic capacitors placed within a few millimeters of the FBGA power balls. The VTT termination rail (0.9V) can carry significant transient current on a terminated x16 bus, so size the VTT LDO or switching converter with adequate peak current and place bulk capacitance near the termination network. Estimated: an x16 DDR2-800 bus terminated at 50 ohm can draw tens of milliamps to ~100 mA peak per line during simultaneous switching, so budget VTT headroom accordingly.
DDR2 requires a controller-driven initialization sequence: 200 us stable-clock wait, precharge-all, EMR2/EMR3 programming, EMR (DLL enable, ODT), MMR with DLL reset, then precharge-all and two refresh cycles before normal operation - follow the sequence in the Micron 1Gb DDR2 datasheet exactly or the DLL will not lock. Also remember periodic auto-refresh (tREFI roughly 7.8 us class) and do not omit the ZQ-free DDR2 note: unlike DDR3 there is no ZQ calibration, but ODT values must still be programmed. Cross-brand swaps (SK Hynix, Samsung, Nanya) must be revalidated for speed suffix and register compatibility even with the same JEDEC ball map.
DRAM junction temperature scales with refresh rate and utilization. For sustained operation near the +95C industrial limit of the IT:M grade, verify the case temperature versus airflow in the enclosure and consider whether the controller implements the extended temperature refresh multiplier (doubling refresh rate above 85C class limits) specified in JEDEC DDR2. Reduced activity derating and modest airflow are usually sufficient for 1Gbit x16 devices at moderate utilization, but closed cabinets at high ambient require thermal analysis before final qualification.
合規資訊
The M suffix in Micron part numbering denotes RoHS/lead-free packaging (per Micron part listings on DigiKey/Mouser). REACH, halogen-free, and conflict-minerals status should be confirmed via Micron's official compliance documentation for the specific date code.
