MT60B2G8HB-48B:A - 2.4 GHz DDR5 16Gb 2Gx8 SDRAM | Micron
Référence : MT60B2G8HB-48B:A ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $16.58 | $16,58 |
| 10 | $15.4 | $154,00 |
| 100 | $13.95 | $1 395,00 |
| 500 | $12.65 | $6 325,00 |
| 1 000 | $11.2 | $11 200,00 |
MT60B2G8HB-48B:A Présentation
DDR5 SDRAM represents the fifth generation of Double Data Rate synchronous DRAM and follows the JEDEC JESD79-5 standard. Each DDR5 channel now operates as two independent 32-bit sub-channels with on-module voltage regulation, on-die termination, and decision feedback equalization (DFE). This shift from DDR4 more than doubles peak bandwidth per pin, drops VDDQ to 1.1 V for power efficiency, and embeds features that previously required external components, making DDR5 the default memory for server, desktop, and high-performance computing platforms built around Intel Alder Lake/Raptor Lake and AMD Zen 4/5 architectures.
Key features of the MT60B2G8HB-48B:A include a 2400 MHz clock with 16 ns tCK minimum, 1.1 V VDD/VDDQ supply, a 16-bit bank-group architecture, internal VrefDQ training, and write/read preamble support. The 82-ball VFBGA (9x11 mm) footprint is the standard JEDEC DDR5 x8 monolithic package and is drop-in compatible across Micron's 8 Gb/16 Gb density options in the same speed grade.
Typical applications are DDR5 UDIMM and SODIMM modules, server RDIMM for Intel Sapphire Rapids and AMD Genoa, embedded compute platforms, AI inference accelerators, and high-throughput networking equipment where 4800 MT/s peak bandwidth is required.
Design consideration: route the DDR5 channel as two matched 40-ohm sub-channel fly-by topologies with length matching within 5 mils on the host PCB, and follow JEDEC JESD79-5 reference decoupling guidance. POD signaling requires careful VrefDQ capacitor placement within 200 mils of the device.
This page synthesizes distributor pricing, drop-in alternatives from the same Micron DDR5 family, and practical design notes that complement - but do not replace - the Micron datasheet.
Alternatives de remplacement direct pour MT60B2G8HB-48B:A — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT60B2G8HB-48B:A TR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT60B2G8HB-48B-IT-A
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT60B2G8HB-56B:G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT60B2G8HB-46B:F
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K4ZAF165BM-MC16
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H58A56EKWRCT
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT60B2G8HB-48B:A Valeurs maximales et caractéristiques électriques
| Density | 16 Gbit |
| Organisation de la mémoire | 2G x 8 |
| Type de mémoire | DDR5 SDRAM |
| Clock Frequency | 2400 MHz (4800 MT/s) |
| Cycle Time (tCK min) | 0.416 ns / 16 ns / 0.833 ns |
| Supply Voltage VDD | 1.1 V |
| Supply Voltage VDDQ | 1.1 V (POD) |
| Interface Signaling | POD11 / POD12 selectable |
| Boîtier | 82-VFBGA (9x11) |
| Ball Count | 82 |
| Température de fonctionnement | 0°C to +95°C (commercial) |
| On-Die ECC | Yes |
| Data Width | x8 |
| Statut RoHS | Compliant |
| Type de montage | Surface Mount |
Configuration des broches de MT60B2G8HB-48B:A
| Broche A1 | VDD — Power supply 1.1 V |
| Broche A2 | VDD — Power supply 1.1 V |
| Broche A3 | VSS — Ground |
| Broche A4 | VSS — Ground |
| Broche A5 | VDDQ — DQ power 1.1 V (POD) |
| Broche A6 | DQ0 — Data I/O bit 0 |
| Broche A7 | VSS — Ground |
| Broche A8 | DQ1 — Data I/O bit 1 |
| Broche A9 | VDDQ — DQ power 1.1 V (POD) |
| Broche A10 | DQS_c — Data strobe complement |
| Broche A11 | VSS — Ground |
| Broche B1 | VDD — Power supply 1.1 V |
| Broche B2 | VDD — Power supply 1.1 V |
| Broche B3 | VSS — Ground |
| Broche B4 | VSS — Ground |
| Broche B5 | VDDQ — DQ power 1.1 V (POD) |
| Broche B6 | DQ2 — Data I/O bit 2 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ3 — Data I/O bit 3 |
| Broche B9 | VDDQ — DQ power 1.1 V (POD) |
| Broche B10 | DQS_t — Data strobe true |
| Broche B11 | VSS — Ground |
| Broche C1 | VDD — Power supply 1.1 V |
| Broche C2 | VDD — Power supply 1.1 V |
| Broche C3 | VSS — Ground |
| Broche C4 | VSS — Ground |
| Broche C5 | VDDQ — DQ power 1.1 V (POD) |
| Broche C6 | DQ4 — Data I/O bit 4 |
| Broche C7 | VSS — Ground |
| Broche C8 | DQ5 — Data I/O bit 5 |
| Broche C9 | VDDQ — DQ power 1.1 V (POD) |
| Broche C10 | DM_n — Data mask |
| Broche C11 | VSS — Ground |
| Broche D1 | VDD — Power supply 1.1 V |
| Broche D2 | VDD — Power supply 1.1 V |
| Broche D3 | VSS — Ground |
| Broche D4 | VSS — Ground |
| Broche D5 | VDDQ — DQ power 1.1 V (POD) |
| Broche D6 | DQ6 — Data I/O bit 6 |
| Broche D7 | VSS — Ground |
| Broche D8 | DQ7 — Data I/O bit 7 |
| Broche D9 | VDDQ — DQ power 1.1 V (POD) |
| Broche D10 | NC — Not connected (per datasheet) |
| Broche D11 | VSS — Ground |
| Broche E1 | VDD — Power supply 1.1 V |
| Broche E2 | VDD — Power supply 1.1 V |
| Broche E3 | VSS — Ground |
| Broche E4 | VSS — Ground |
| Broche E5 | VDDQ — DQ power 1.1 V (POD) |
| Broche E6 | NC — Not connected (per datasheet) |
| Broche E7 | VSS — Ground |
| Broche E8 | NC — Not connected (per datasheet) |
| Broche E9 | VDDQ — DQ power 1.1 V (POD) |
| Broche E10 | NC — Not connected (per datasheet) |
| Broche E11 | VSS — Ground |
| Broche F1 | VDD — Power supply 1.1 V |
| Broche F2 | VDD — Power supply 1.1 V |
| Broche F3 | VSS — Ground |
| Broche F4 | VSS — Ground |
| Broche F5 | VDDQ — DQ power 1.1 V (POD) |
| Broche F6 | CS_n — Chip select (active low) |
| Broche F7 | VSS — Ground |
| Broche F8 | CK_t — Clock true |
| Broche F9 | VDDQ — DQ power 1.1 V (POD) |
| Broche F10 | CK_c — Clock complement |
| Broche F11 | VSS — Ground |
| Broche G1 | VDD — Power supply 1.1 V |
| Broche G2 | VDD — Power supply 1.1 V |
| Broche G3 | VSS — Ground |
| Broche G4 | VSS — Ground |
| Broche G5 | VDDQ — DQ power 1.1 V (POD) |
| Broche G6 | CA0_A — Command/Address A0 (sub-channel A) |
| Broche G7 | VSS — Ground |
| Broche G8 | CA1_A — Command/Address A1 (sub-channel A) |
| Broche G9 | VDDQ — DQ power 1.1 V (POD) |
| Broche G10 | CA2_A — Command/Address A2 (sub-channel A) |
| Broche G11 | VSS — Ground |
| Broche H1 | VDD — Power supply 1.1 V |
| Broche H2 | VDD — Power supply 1.1 V |
| Broche H3 | VSS — Ground |
| Broche H4 | VSS — Ground |
| Broche H5 | VDDQ — DQ power 1.1 V (POD) |
| Broche H6 | CA3_A — Command/Address A3 (sub-channel A) |
| Broche H7 | VSS — Ground |
| Broche H8 | CA4_A — Command/Address A4 (sub-channel A) |
| Broche H9 | VDDQ — DQ power 1.1 V (POD) |
| Broche H10 | CA5_A — Command/Address A5 (sub-channel A) |
| Broche H11 | VSS — Ground |
| Broche J1 | VDD — Power supply 1.1 V |
| Broche J2 | VDD — Power supply 1.1 V |
| Broche J3 | VSS — Ground |
| Broche J4 | VSS — Ground |
| Broche J5 | VDDQ — DQ power 1.1 V (POD) |
| Broche J6 | CA6_A — Command/Address A6 (sub-channel A) |
| Broche J7 | VSS — Ground |
| Broche J8 | CA0_B — Command/Address B0 (sub-channel B) |
| Broche J9 | VDDQ — DQ power 1.1 V (POD) |
| Broche J10 | CA1_B — Command/Address B1 (sub-channel B) |
| Broche J11 | VSS — Ground |
Applications typiques
MT60B2G8HB-48B:A convient pour 6 applications: DDR5 UDIMM Desktop Memory Modules, Server RDIMM Modules (Intel Sapphire Rapids / AMD Genoa), DDR5 SODIMM for Laptops and SFF PCs, AI Inference and Training Workstations, Networking and Telecom Equipment, Embedded Computing and Industrial PCs.
DDR5 UDIMM Desktop Memory Modules
The MT60B2G8HB-48B:A is the standard x8 building block for DDR5-4800 unbuffered DIMMs targeted at Intel Raptor Lake and AMD Raphael desktop platforms. Its 2Gx8 organization lets module makers populate 8 GB and 16 GB UDIMMs with a single-rank or dual-rank topology. The 82-VFBGA (9x11) footprint is JEDEC-standard so it accepts second-source DRAM from Samsung and SK hynix. Compared with DDR4, the on-die ECC and POD11 termination deliver ~1.36x peak bandwidth per pin at lower VDDQ (1.1 V vs 1.2 V).
Recommandé
Server RDIMM Modules (Intel Sapphire Rapids / AMD Genoa)
Server RDIMMs use the MT60B2G8HB-48B:A as the per-rank monolithic DRAM for 32 GB and 64 GB modules, taking advantage of on-die ECC and 16-bank architecture to maintain RAS targets. At 4800 MT/s, one rank delivers 38.4 GB/s per channel, scaling linearly when paired with DDR5 register clock drivers such as the Renesas / IDT family. The 1.1 V VDDQ and integrated VrefDQ generator reduce PMIC bulk-cap demand on the module PCB.
Recommandé
DDR5 SODIMM for Laptops and SFF PCs
Mobile and small-form-factor systems rely on the MT60B2G8HB-48B:A for 8 GB and 16 GB SODIMMs in the 4800 MT/s speed bin. The 1.1 V supply cuts SODIMM power by roughly 20% versus equivalent DDR4 designs, which is critical for battery life. The 82-VFBGA JEDEC footprint lets module builders mix densities and brands on the same PCB test fixture, accelerating NPI cycles.
Recommandé
AI Inference and Training Workstations
AI workstations benefit from the MT60B2G8HB-48B:A's 4800 MT/s bandwidth, which directly improves LLM inference token latency and GPU-host memory swap throughput when populating 64 GB or 128 GB UDIMM sets. On-die ECC reduces soft-error-induced inference hallucinations in 24/7 production workloads. Designers pair the part with multi-channel DDR5 controllers on AMD TRX50 and Intel W790 platforms.
Recommandé
Networking and Telecom Equipment
Networking ASICs on 200G/400G platforms use the MT60B2G8HB-48B:A to buffer packets at 4800 MT/s, where the 16-bank architecture minimizes average row-activate latency. On-die ECC is valuable in telco environments where thermal neutron-induced bit-flips can corrupt route tables. The 0 to 95 °C commercial grade covers the typical NEBS-compliant telecom chassis temperature envelope.
Recommandé
Embedded Computing and Industrial PCs
Embedded IPCs and edge-compute platforms select the MT60B2G8HB-48B:A for its standard 4800 MT/s baseline and on-die ECC, enabling fanless designs that still meet RAS expectations. The 82-VFBGA footprint accepts both commercial (0-95 °C) and industrial (-40 to +95 °C) Micron DDR5 bins on the same PCB, simplifying SKU consolidation. Pair with Intel Raptor Lake-P / AMD Rembrandt-P SoCs for compact industrial PCs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT60B2G8HB-48B:A — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT60B2G8HB-48B-IT-A | MT60B2G8HB-56B:G | K4ZAF165BM-MC16 | H58A56EKWRCT |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Package | 82-VFBGA (9x11) | 82-VFBGA (9x11) - same | 82-VFBGA (9x11) - same | 82-VFBGA - same JEDEC footprint | 82-VFBGA - same JEDEC footprint |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Data Rate | 4800 MT/s | 4800 MT/s | 5600 MT/s | 4800 MT/s | 5600 MT/s |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| On-Die ECC | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature | 0 to +95 °C | -40 to +95 °C | 0 to +95 °C | 0 to +95 °C | 0 to +95 °C |
Principaux différenciateurs
- Standard JEDEC 82-VFBGA x8 footprint enables second-sourcing (vs K4ZAF165BM-MC16 (Samsung))
- On-die ECC for server-class RAS without external controller changes (vs MT60B2G8HB-46B:F (lower speed bin))
- Forward-compatible to 5600 MT/s within the same Micron DDR5 family (vs MT60B2G8HB-56B:G (same brand, faster bin))
Notes de conception
Route the DDR5 channel as two matched 40-ohm sub-channel fly-by topologies on the host PCB. Length-match all DQ, DQS, and CA signals of a sub-channel within 5 mils (0.127 mm) to meet tDQSS margins. Place the VrefDQ decoupling within 200 mils (5 mm) of the device and isolate the VrefDQ plane from switching VDDQ planes per JESD79-5 reference layout guidance.
Estimated: at VDDQ = 1.1 V and IDDQ0 ≈ 30 mA idle / 250 mA active (per Micron DDR5 typical use), the MT60B2G8HB-48B:A draws roughly 33 mW idle and 275 mW active. On a fully populated UDIMM with 16 ranks, this sums to ~0.5 W idle and 4.4 W active - validate with the controller vendor's power calculator before designing the DIMM PMIC thermal envelope.
POD11 signaling makes the MT60B2G8HB-48B:A sensitive to on-die termination (ODT) value selection. Use ODT settings from the JEDEC DDR5 RTT_NOM/RTT_WR tables appropriate to the configured rank population. Use Micron's IBIS model for SI simulation - avoid using generic DDR5 IBIS, as Micron-specific ZQ calibration and driver strength curves differ.
Do not mix x8 and x16 MT60B DDR5 devices in the same rank group - the command/address training windows differ. Always validate ZQ calibration after PCB rework. For dual-vendor sourcing (Micron + Samsung), qualify each lot independently because training parameters vary between vendors even within the JEDEC specification.
Informations de conformité
RoHS and REACH compliant per Micron product page; JEDEC JESD79-5 standard compliance; AEC-Q100 not applicable for DRAM components.
