MT60B2G8HB-48B:A - 2.4 GHz DDR5 16Gb 2Gx8 SDRAM | Micron
N.º de pieza: MT60B2G8HB-48B:A ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $16.58 | $16,58 |
| 10 | $15.4 | $154,00 |
| 100 | $13.95 | $1.395,00 |
| 500 | $12.65 | $6.325,00 |
| 1.000 | $11.2 | $11.200,00 |
MT60B2G8HB-48B:A Descripción general
DDR5 SDRAM represents the fifth generation of Double Data Rate synchronous DRAM and follows the JEDEC JESD79-5 standard. Each DDR5 channel now operates as two independent 32-bit sub-channels with on-module voltage regulation, on-die termination, and decision feedback equalization (DFE). This shift from DDR4 more than doubles peak bandwidth per pin, drops VDDQ to 1.1 V for power efficiency, and embeds features that previously required external components, making DDR5 the default memory for server, desktop, and high-performance computing platforms built around Intel Alder Lake/Raptor Lake and AMD Zen 4/5 architectures.
Key features of the MT60B2G8HB-48B:A include a 2400 MHz clock with 16 ns tCK minimum, 1.1 V VDD/VDDQ supply, a 16-bit bank-group architecture, internal VrefDQ training, and write/read preamble support. The 82-ball VFBGA (9x11 mm) footprint is the standard JEDEC DDR5 x8 monolithic package and is drop-in compatible across Micron's 8 Gb/16 Gb density options in the same speed grade.
Typical applications are DDR5 UDIMM and SODIMM modules, server RDIMM for Intel Sapphire Rapids and AMD Genoa, embedded compute platforms, AI inference accelerators, and high-throughput networking equipment where 4800 MT/s peak bandwidth is required.
Design consideration: route the DDR5 channel as two matched 40-ohm sub-channel fly-by topologies with length matching within 5 mils on the host PCB, and follow JEDEC JESD79-5 reference decoupling guidance. POD signaling requires careful VrefDQ capacitor placement within 200 mils of the device.
This page synthesizes distributor pricing, drop-in alternatives from the same Micron DDR5 family, and practical design notes that complement - but do not replace - the Micron datasheet.
Alternativas directas para MT60B2G8HB-48B:A — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MT60B2G8HB-48B:A TR
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT60B2G8HB-48B-IT-A
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT60B2G8HB-56B:G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT60B2G8HB-46B:F
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
K4ZAF165BM-MC16
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
H58A56EKWRCT
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT60B2G8HB-48B:A Valores máximos y características eléctricas
| Density | 16 Gbit |
| Organización de memoria | 2G x 8 |
| Tipo de memoria | DDR5 SDRAM |
| Clock Frequency | 2400 MHz (4800 MT/s) |
| Cycle Time (tCK min) | 0.416 ns / 16 ns / 0.833 ns |
| Supply Voltage VDD | 1.1 V |
| Supply Voltage VDDQ | 1.1 V (POD) |
| Interface Signaling | POD11 / POD12 selectable |
| Encapsulado | 82-VFBGA (9x11) |
| Ball Count | 82 |
| Temperatura de funcionamiento | 0°C to +95°C (commercial) |
| On-Die ECC | Yes |
| Data Width | x8 |
| Estado RoHS | Compliant |
| Tipo de montaje | Surface Mount |
Configuración de pines de MT60B2G8HB-48B:A
| Pin A1 | VDD — Power supply 1.1 V |
| Pin A2 | VDD — Power supply 1.1 V |
| Pin A3 | VSS — Ground |
| Pin A4 | VSS — Ground |
| Pin A5 | VDDQ — DQ power 1.1 V (POD) |
| Pin A6 | DQ0 — Data I/O bit 0 |
| Pin A7 | VSS — Ground |
| Pin A8 | DQ1 — Data I/O bit 1 |
| Pin A9 | VDDQ — DQ power 1.1 V (POD) |
| Pin A10 | DQS_c — Data strobe complement |
| Pin A11 | VSS — Ground |
| Pin B1 | VDD — Power supply 1.1 V |
| Pin B2 | VDD — Power supply 1.1 V |
| Pin B3 | VSS — Ground |
| Pin B4 | VSS — Ground |
| Pin B5 | VDDQ — DQ power 1.1 V (POD) |
| Pin B6 | DQ2 — Data I/O bit 2 |
| Pin B7 | VSS — Ground |
| Pin B8 | DQ3 — Data I/O bit 3 |
| Pin B9 | VDDQ — DQ power 1.1 V (POD) |
| Pin B10 | DQS_t — Data strobe true |
| Pin B11 | VSS — Ground |
| Pin C1 | VDD — Power supply 1.1 V |
| Pin C2 | VDD — Power supply 1.1 V |
| Pin C3 | VSS — Ground |
| Pin C4 | VSS — Ground |
| Pin C5 | VDDQ — DQ power 1.1 V (POD) |
| Pin C6 | DQ4 — Data I/O bit 4 |
| Pin C7 | VSS — Ground |
| Pin C8 | DQ5 — Data I/O bit 5 |
| Pin C9 | VDDQ — DQ power 1.1 V (POD) |
| Pin C10 | DM_n — Data mask |
| Pin C11 | VSS — Ground |
| Pin D1 | VDD — Power supply 1.1 V |
| Pin D2 | VDD — Power supply 1.1 V |
| Pin D3 | VSS — Ground |
| Pin D4 | VSS — Ground |
| Pin D5 | VDDQ — DQ power 1.1 V (POD) |
| Pin D6 | DQ6 — Data I/O bit 6 |
| Pin D7 | VSS — Ground |
| Pin D8 | DQ7 — Data I/O bit 7 |
| Pin D9 | VDDQ — DQ power 1.1 V (POD) |
| Pin D10 | NC — Not connected (per datasheet) |
| Pin D11 | VSS — Ground |
| Pin E1 | VDD — Power supply 1.1 V |
| Pin E2 | VDD — Power supply 1.1 V |
| Pin E3 | VSS — Ground |
| Pin E4 | VSS — Ground |
| Pin E5 | VDDQ — DQ power 1.1 V (POD) |
| Pin E6 | NC — Not connected (per datasheet) |
| Pin E7 | VSS — Ground |
| Pin E8 | NC — Not connected (per datasheet) |
| Pin E9 | VDDQ — DQ power 1.1 V (POD) |
| Pin E10 | NC — Not connected (per datasheet) |
| Pin E11 | VSS — Ground |
| Pin F1 | VDD — Power supply 1.1 V |
| Pin F2 | VDD — Power supply 1.1 V |
| Pin F3 | VSS — Ground |
| Pin F4 | VSS — Ground |
| Pin F5 | VDDQ — DQ power 1.1 V (POD) |
| Pin F6 | CS_n — Chip select (active low) |
| Pin F7 | VSS — Ground |
| Pin F8 | CK_t — Clock true |
| Pin F9 | VDDQ — DQ power 1.1 V (POD) |
| Pin F10 | CK_c — Clock complement |
| Pin F11 | VSS — Ground |
| Pin G1 | VDD — Power supply 1.1 V |
| Pin G2 | VDD — Power supply 1.1 V |
| Pin G3 | VSS — Ground |
| Pin G4 | VSS — Ground |
| Pin G5 | VDDQ — DQ power 1.1 V (POD) |
| Pin G6 | CA0_A — Command/Address A0 (sub-channel A) |
| Pin G7 | VSS — Ground |
| Pin G8 | CA1_A — Command/Address A1 (sub-channel A) |
| Pin G9 | VDDQ — DQ power 1.1 V (POD) |
| Pin G10 | CA2_A — Command/Address A2 (sub-channel A) |
| Pin G11 | VSS — Ground |
| Pin H1 | VDD — Power supply 1.1 V |
| Pin H2 | VDD — Power supply 1.1 V |
| Pin H3 | VSS — Ground |
| Pin H4 | VSS — Ground |
| Pin H5 | VDDQ — DQ power 1.1 V (POD) |
| Pin H6 | CA3_A — Command/Address A3 (sub-channel A) |
| Pin H7 | VSS — Ground |
| Pin H8 | CA4_A — Command/Address A4 (sub-channel A) |
| Pin H9 | VDDQ — DQ power 1.1 V (POD) |
| Pin H10 | CA5_A — Command/Address A5 (sub-channel A) |
| Pin H11 | VSS — Ground |
| Pin J1 | VDD — Power supply 1.1 V |
| Pin J2 | VDD — Power supply 1.1 V |
| Pin J3 | VSS — Ground |
| Pin J4 | VSS — Ground |
| Pin J5 | VDDQ — DQ power 1.1 V (POD) |
| Pin J6 | CA6_A — Command/Address A6 (sub-channel A) |
| Pin J7 | VSS — Ground |
| Pin J8 | CA0_B — Command/Address B0 (sub-channel B) |
| Pin J9 | VDDQ — DQ power 1.1 V (POD) |
| Pin J10 | CA1_B — Command/Address B1 (sub-channel B) |
| Pin J11 | VSS — Ground |
Aplicaciones típicas
MT60B2G8HB-48B:A es adecuado para 6 aplicacións: DDR5 UDIMM Desktop Memory Modules, Server RDIMM Modules (Intel Sapphire Rapids / AMD Genoa), DDR5 SODIMM for Laptops and SFF PCs, AI Inference and Training Workstations, Networking and Telecom Equipment, Embedded Computing and Industrial PCs.
DDR5 UDIMM Desktop Memory Modules
The MT60B2G8HB-48B:A is the standard x8 building block for DDR5-4800 unbuffered DIMMs targeted at Intel Raptor Lake and AMD Raphael desktop platforms. Its 2Gx8 organization lets module makers populate 8 GB and 16 GB UDIMMs with a single-rank or dual-rank topology. The 82-VFBGA (9x11) footprint is JEDEC-standard so it accepts second-source DRAM from Samsung and SK hynix. Compared with DDR4, the on-die ECC and POD11 termination deliver ~1.36x peak bandwidth per pin at lower VDDQ (1.1 V vs 1.2 V).
Recomendado
Server RDIMM Modules (Intel Sapphire Rapids / AMD Genoa)
Server RDIMMs use the MT60B2G8HB-48B:A as the per-rank monolithic DRAM for 32 GB and 64 GB modules, taking advantage of on-die ECC and 16-bank architecture to maintain RAS targets. At 4800 MT/s, one rank delivers 38.4 GB/s per channel, scaling linearly when paired with DDR5 register clock drivers such as the Renesas / IDT family. The 1.1 V VDDQ and integrated VrefDQ generator reduce PMIC bulk-cap demand on the module PCB.
Recomendado
DDR5 SODIMM for Laptops and SFF PCs
Mobile and small-form-factor systems rely on the MT60B2G8HB-48B:A for 8 GB and 16 GB SODIMMs in the 4800 MT/s speed bin. The 1.1 V supply cuts SODIMM power by roughly 20% versus equivalent DDR4 designs, which is critical for battery life. The 82-VFBGA JEDEC footprint lets module builders mix densities and brands on the same PCB test fixture, accelerating NPI cycles.
Recomendado
AI Inference and Training Workstations
AI workstations benefit from the MT60B2G8HB-48B:A's 4800 MT/s bandwidth, which directly improves LLM inference token latency and GPU-host memory swap throughput when populating 64 GB or 128 GB UDIMM sets. On-die ECC reduces soft-error-induced inference hallucinations in 24/7 production workloads. Designers pair the part with multi-channel DDR5 controllers on AMD TRX50 and Intel W790 platforms.
Recomendado
Networking and Telecom Equipment
Networking ASICs on 200G/400G platforms use the MT60B2G8HB-48B:A to buffer packets at 4800 MT/s, where the 16-bank architecture minimizes average row-activate latency. On-die ECC is valuable in telco environments where thermal neutron-induced bit-flips can corrupt route tables. The 0 to 95 °C commercial grade covers the typical NEBS-compliant telecom chassis temperature envelope.
Recomendado
Embedded Computing and Industrial PCs
Embedded IPCs and edge-compute platforms select the MT60B2G8HB-48B:A for its standard 4800 MT/s baseline and on-die ECC, enabling fanless designs that still meet RAS expectations. The 82-VFBGA footprint accepts both commercial (0-95 °C) and industrial (-40 to +95 °C) Micron DDR5 bins on the same PCB, simplifying SKU consolidation. Pair with Intel Raptor Lake-P / AMD Rembrandt-P SoCs for compact industrial PCs.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MT60B2G8HB-48B:A — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MT60B2G8HB-48B-IT-A | MT60B2G8HB-56B:G | K4ZAF165BM-MC16 | H58A56EKWRCT |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Package | 82-VFBGA (9x11) | 82-VFBGA (9x11) - same | 82-VFBGA (9x11) - same | 82-VFBGA - same JEDEC footprint | 82-VFBGA - same JEDEC footprint |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Data Rate | 4800 MT/s | 4800 MT/s | 5600 MT/s | 4800 MT/s | 5600 MT/s |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| On-Die ECC | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature | 0 to +95 °C | -40 to +95 °C | 0 to +95 °C | 0 to +95 °C | 0 to +95 °C |
Diferenciadores clave
- Standard JEDEC 82-VFBGA x8 footprint enables second-sourcing (frente a K4ZAF165BM-MC16 (Samsung))
- On-die ECC for server-class RAS without external controller changes (frente a MT60B2G8HB-46B:F (lower speed bin))
- Forward-compatible to 5600 MT/s within the same Micron DDR5 family (frente a MT60B2G8HB-56B:G (same brand, faster bin))
Notas de diseño
Route the DDR5 channel as two matched 40-ohm sub-channel fly-by topologies on the host PCB. Length-match all DQ, DQS, and CA signals of a sub-channel within 5 mils (0.127 mm) to meet tDQSS margins. Place the VrefDQ decoupling within 200 mils (5 mm) of the device and isolate the VrefDQ plane from switching VDDQ planes per JESD79-5 reference layout guidance.
Estimated: at VDDQ = 1.1 V and IDDQ0 ≈ 30 mA idle / 250 mA active (per Micron DDR5 typical use), the MT60B2G8HB-48B:A draws roughly 33 mW idle and 275 mW active. On a fully populated UDIMM with 16 ranks, this sums to ~0.5 W idle and 4.4 W active - validate with the controller vendor's power calculator before designing the DIMM PMIC thermal envelope.
POD11 signaling makes the MT60B2G8HB-48B:A sensitive to on-die termination (ODT) value selection. Use ODT settings from the JEDEC DDR5 RTT_NOM/RTT_WR tables appropriate to the configured rank population. Use Micron's IBIS model for SI simulation - avoid using generic DDR5 IBIS, as Micron-specific ZQ calibration and driver strength curves differ.
Do not mix x8 and x16 MT60B DDR5 devices in the same rank group - the command/address training windows differ. Always validate ZQ calibration after PCB rework. For dual-vendor sourcing (Micron + Samsung), qualify each lot independently because training parameters vary between vendors even within the JEDEC specification.
Información de cumplimiento
RoHS and REACH compliant per Micron product page; JEDEC JESD79-5 standard compliance; AEC-Q100 not applicable for DRAM components.
