NVMFS5C430NWF - 40V 1.7mΩ 185A N-Channel MOSFET | onsemi
Référence : NVMFS5C430NWF ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.38 | $138,00 |
| 500 | $1.15 | $575,00 |
| 1 000 | $0.98 | $980,00 |
| 3 000 | $0.82 | $2 460,00 |
NVMFS5C430NWF Présentation
What is an N-Channel Power MOSFET? An N-Channel MOSFET is a voltage-controlled semiconductor switch whose drain-source channel is populated by electrons when the gate is biased above the threshold. Power MOSFETs belong to the broader family of discrete semiconductors, descending from signal MOSFETs and ancestors of the insulated-gate bipolar transistor (IGBT) for higher voltages. Within onsemi's portfolio, the NVMFS5C430N family targets low- to medium-voltage applications where high current density, low RDS(on), and small PCB footprint are critical design drivers.
Key features of the NVMFS5C430NWF include a typical RDS(on) of 1.7 mΩ at VGS=10 V, low total gate charge to reduce switching losses, and a 5x6 mm DFN5 footprint that cuts board area versus traditional DPAK packages. The wettable flank termination enables automatic optical inspection (AOI) of solder joints, a critical feature for automotive-grade quality control.
The part is AEC-Q101 qualified and PPAP capable, making it suitable for automotive electronics. It is also RoHS compliant and Pb-Free, satisfying modern environmental requirements. Its construction uses onsemi's standard power MOSFET process technology, balancing cell density with ruggedness.
Typical applications include 12 V automotive ECU loads, high-current synchronous buck converters, motor drive H-bridges, hot-swap circuits, and battery management systems where the wettable flank and AEC-Q101 qualification provide automotive-grade reliability.
When designing with this device, attention should be paid to gate drive voltage and PCB thermal layout. A VGS of 10 V ensures full RDS(on) optimization, while adequate copper pour on the drain pad is essential for heat dissipation at the 185 A current level.
Alternatives de remplacement direct pour NVMFS5C430NWF — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NVMFS5C430NWF (même facteur de forme et même empreinte) — différant par Package, Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NVMFS5C430NLAFT1G
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
NVMFS5C430NWFT1G
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
NVMFS5C430NL
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
BSC014N04LSIATMA1
✅ Remplacement direct✓ En stock
$0.39 / unité
Voir la fiche technique →SiR870DP
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NVMFS5C430NWF Valeurs maximales et caractéristiques électriques
| Type de transistor | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 185 A |
| RDS(on) Typical | 1.7 mΩ |
| Boîtier | DFN5 (5x6 mm) with Wettable Flanks |
| Type de montage | Surface Mount |
| AEC-Q101 Qualified | Yes |
| PPAP Capable | Yes |
| RoHS Compliance | Compliant |
| Lead-Free / Halogen-Free | Pb-Free (Halogen status not in data) |
| Footprint | 5x6 mm Small Outline |
| Technology | Trench Power MOSFET |
Configuration des broches de NVMFS5C430NWF
| Broche 1 | GATE — MOSFET gate drive input |
| Broche 2 | SOURCE — Source connection (low-side) |
| Broche 3 | SOURCE — Source connection (low-side) |
| Broche 4 | SOURCE — Source connection (low-side) |
| Broche 5 | SOURCE — Source connection (low-side) |
| Broche PAD | DRAIN — Drain connection via exposed thermal pad |
Zone de fonctionnement sûr (SOA) - DC Continuous
Applications typiques
NVMFS5C430NWF convient pour 6 applications: 12V Automotive ECU Load Switching, Synchronous Buck Converter High-Side FET, H-Bridge Motor Drive Stage, Hot-Swap / Inrush Current Limiter, Battery Management System (BMS) Protection FET, USB Type-C PD Power Path Switch.
12V Automotive ECU Load Switching
The NVMFS5C430NWF's 40 V VDS, 185 A ID, and AEC-Q101 qualification make it ideal for high-side/low-side load switching in 12 V automotive ECUs. Its 1.7 mΩ typical RDS(on) minimizes conduction loss when driving solenoids, injectors, or motors directly from the battery rail, while the wettable flank package supports AOI-based solder inspection required in automotive manufacturing lines.
Recommandé
Synchronous Buck Converter High-Side FET
In 12 V-input synchronous buck converters, the NVMFS5C430NWF can be used as the high-side control FET. Its low total gate charge reduces switching losses at high frequencies (up to ~500 kHz), while 40 V VDS provides headroom for transients on automotive 12 V buses. Pair with a smaller onsemi low-side MOSFET for a complete synchronous rectifier solution.
Recommandé
H-Bridge Motor Drive Stage
The NVMFS5C430NWF suits half-bridge positions in brushed DC motor drives and BLDC inverter legs operating from 12-24 V batteries. Four devices form a complete H-bridge capable of switching tens of amps continuous. Its 5x6 mm DFN5 footprint allows compact PCB designs for robotics, e-bikes, and small traction drives where board area is at a premium.
Recommandé
Hot-Swap / Inrush Current Limiter
In server and telecom 12 V/24 V hot-swap circuits, the NVMFS5C430NWF acts as the main disconnect FET. Its 185 A continuous rating and 1.7 mΩ RDS(on) keep voltage drop across the FET low during steady-state operation. The device's low thermal resistance ensures reliable operation during repeated inrush events where energy dissipation must be managed.
Recommandé
Battery Management System (BMS) Protection FET
The NVMFS5C430NWF is well-suited as the charge/discharge protection FET in lithium-ion BMS modules. Its 40 V VDS handles series-stack voltages of up to 10S Li-ion configurations with margin. AEC-Q101 qualification enables deployment in EV and energy-storage battery packs where functional safety and long-term reliability are mandatory.
Recommandé
USB Type-C PD Power Path Switch
In USB Type-C Power Delivery sink applications, the NVMFS5C430NWF handles the VBUS path switching at 20 V/5 A (100 W) levels. Its 40 V VDS comfortably exceeds USB-PD's 20 V maximum, and 1.7 mΩ RDS(on) keeps dissipation under 0.5 W at full load, eliminating the need for external heatsinks in compact laptop/tablet charger designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NVMFS5C430NWF — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NVMFS5C430NLAFT1G | BSC014N04LSI | SiR870DP |
|---|---|---|---|---|
| Brand | onsemi | onsemi | Infineon | Vishay Intertechnology |
| Package | DFN5 (5x6 mm) | DFN5 (5x6 mm) - same | DFN5 (5x6 mm) - same | DFN5 (5x6 mm) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V |
| RDS(on) Typical @ VGS=10V | 1.7 mΩ | 1.7 mΩ | 1.4 mΩ | 1.8 mΩ |
| Wettable Flank | Yes (WF suffix) | No | Yes | Yes |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes |
| RoHS Compliant / Pb-Free | Yes | Yes | Yes | Yes |
| PPAP Capable | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Wettable Flank Package for AOI (vs NVMFS5C430NLAFT1G)
- Lower RDS(on) Than Comparable Infineon Part (vs BSC014N04LSI)
- Lower RDS(on) vs Vishay SiR870DP (vs SiR870DP)
Notes de conception
Estimated: At 1.7 mΩ RDS(on) and 50 A continuous drain current, conduction loss is P = I²R = (50)² × 0.0017 = 4.25 W. The DFN5 5x6 mm package requires substantial copper pour on the drain pad (recommended ≥ 1 square inch on outer layers) to keep junction temperature rise under 50°C above ambient. For 100 A+ applications, use multi-layer PCB with thermal vias under the exposed pad.
Layout the gate drive loop area to a minimum to prevent parasitic inductance from causing ringing at the gate. Keep the gate-driver-to-FET gate trace short (≤ 10 mm) and use a 10 Ω gate resistor to dampen oscillations. The source connection should be Kelvin-sensed back to the gate driver ground for clean gate drive signals at high di/dt switching.
Do not operate the NVMFS5C430NWF without VGS ≥ 10 V - at lower gate voltages the RDS(on) increases dramatically, causing thermal runaway at high currents. Also, ensure the wettable flank side of the package sits on a properly sized solder land pattern per the onsemi DFN5 land drawing; incorrect land patterns will cause solder joint opens during thermal cycling.
The exposed drain pad must be soldered to a PCB copper pour that extends beyond the pad by at least 3 mm on each side, with thermal vias (≥ 9 vias, 0.3 mm drill) connecting top and inner copper layers. This provides both electrical connection to the drain and the primary thermal dissipation path. Without adequate copper, the device will thermally limit at currents well below its 185 A rating.
Informations de conformité
RoHS and Pb-Free status verified from onsemi datasheet features list. AEC-Q101 qualified per the datasheet feature bullets. REACH, halogen-free, and conflict-mineral status not explicitly stated in verified web data and marked unknown.
