RMWV3216AGBG-5S2#AC0 - 32Mb Advanced LPSRAM, 2Mx16, 55ns | Renesas
Référence : RMWV3216AGBG-5S2#AC0 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.78 | $37,80 |
| 100 | $3.36 | $336,00 |
| 500 | $2.94 | $1 470,00 |
| 1 000 | $2.65 | $2 650,00 |
RMWV3216AGBG-5S2#AC0 Présentation
An LPSRAM (Low-Power SRAM) is a class of asynchronous static random-access memory that retains data without refresh and offers dramatically lower active and standby current than conventional SRAM. LPSRAM sits in the broader memory hierarchy between volatile DRAM (which needs refresh and is dense) and true non-volatile memory (Flash/EEPROM, which is slow to write). Within Renesas's portfolio, Advanced LPSRAM targets battery-backed and energy-harvesting applications where every microwatt of quiescent current matters, while still delivering the byte-level random access that Flash cannot.
Key features include very low standby current for battery-backup retention, a wide 2.7 V to 3.6 V single-rail supply range that simplifies power-tree design, common parallel SRAM interface pinout (CS, OE, WE, UB/LB byte enables) for drop-in replacement of legacy async SRAMs, and 3-STATE outputs for bus-sharing. The 48-ball TFBGA footprint is also substantially smaller than TSOP or SOJ packaging used by older 32-Mbit parallel SRAMs.
Technically, the device uses a six-transistor (6T) CMOS memory cell array with on-chip address decoding and sense amplifiers, plus internal voltage generation for the memory core. The die is organized as 2M × 16 with separate upper-byte and lower-byte write enables (UB, LB), which simplifies 8-bit and 16-bit bus designs in the same socket. Power-saving features include automatic power-down when CS is deselected, plus data-retention modes down to 2.0 V for coin-cell backup.
Typical applications include industrial metering and data loggers, factory automation controllers, point-of-sale terminals, automotive infotainment buffers, medical handheld instruments, networking line cards requiring fast read/write buffers, and battery-backed equipment such as e-meter or PLC retentive memory. The low standby current makes it attractive as a shadow RAM for systems that must preserve state through power loss.
When designing with this part, follow the datasheet's decoupling guideline of a 0.1 µF ceramic capacitor placed within 5 mm of each VCC ball, plus a bulk 10 µF tantalum or ceramic on the supply rail. Place the device close to the host controller to keep the address/data bus traces short, since the 55 ns access time assumes modest capacitive loading.
This page synthesizes distributor pricing and stock, drop-in alternative comparisons across Renesas's own RMWV3216A speed-grade family and competing 48-ball TFBGA LPSRAMs, and practical design notes not consolidated in the manufacturer datasheet.
Alternatives de remplacement direct pour RMWV3216AGBG-5S2#AC0 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
RMWV3216AGBG-5S1#AC0
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
RMWV3216AGBG-5S0#AC0
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
RMWV3216AGBG-5S2#HA0
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
RMWV3216AGBG-5S2#KC0
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
CY62157EV30L-45BVXI
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
RMWV3216AGBG-5S2#AC0 Valeurs maximales et caractéristiques électriques
| Type de mémoire | Volatile SRAM (Asynchronous LPSRAM) |
| Taille de mémoire | 32 Mbit (4 MB) |
| Organisation de la mémoire | 2M words × 16 bits |
| Interface | Parallel (asynchronous) |
| Access Time | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V |
| Température de fonctionnement | -40 °C to +85 °C (I-Temp) |
| Boîtier | 48-ball TFBGA, 7.5 mm × 8.5 mm |
| Type de sortie | 3-STATE |
| Byte Enables | UB (Upper Byte), LB (Lower Byte) |
| Write Control | Active-low WE, active-low CS |
| Output Enable | Active-low OE |
| Type de montage | Surface Mount (BGA) |
| Statut RoHS | Compliant |
| Technology | Renesas Advanced LPSRAM CMOS |
Configuration des broches de RMWV3216AGBG-5S2#AC0
| Broche A1 | NC — Not connected (per datasheet) |
| Broche A2 | A0 — Address input 0 |
| Broche A3 | A1 — Address input 1 |
| Broche A4 | A2 — Address input 2 |
| Broche A5 | A3 — Address input 3 |
| Broche A6 | A4 — Address input 4 |
| Broche B1 | NC — Not connected (per datasheet) |
| Broche B2 | A5 — Address input 5 |
| Broche B3 | A6 — Address input 6 |
| Broche B4 | A7 — Address input 7 |
| Broche B5 | A8 — Address input 8 |
| Broche B6 | A9 — Address input 9 |
| Broche C1 | CS — Chip select (active low) |
| Broche C2 | A10 — Address input 10 |
| Broche C3 | A11 — Address input 11 |
| Broche C4 | A12 — Address input 12 |
| Broche C5 | A13 — Address input 13 |
| Broche C6 | A14 — Address input 14 |
| Broche D1 | OE — Output enable (active low) |
| Broche D2 | A15 — Address input 15 |
| Broche D3 | A16 — Address input 16 |
| Broche D4 | A17 — Address input 17 |
| Broche D5 | A18 — Address input 18 |
| Broche D6 | A19 — Address input 19 |
| Broche E1 | WE — Write enable (active low) |
| Broche E2 | A20 — Address input 20 |
| Broche E3 | NC — Not connected (per datasheet) |
| Broche E4 | LB — Lower byte enable (active low) |
| Broche E5 | UB — Upper byte enable (active low) |
| Broche E6 | VCC — Power supply |
| Broche F1 | I/O0 — Data I/O 0 |
| Broche F2 | I/O1 — Data I/O 1 |
| Broche F3 | I/O2 — Data I/O 2 |
| Broche F4 | I/O3 — Data I/O 3 |
| Broche F5 | I/O4 — Data I/O 4 |
| Broche F6 | VSS — Ground |
| Broche G1 | VCC — Power supply |
| Broche G2 | I/O5 — Data I/O 5 |
| Broche G3 | I/O6 — Data I/O 6 |
| Broche G4 | I/O7 — Data I/O 7 |
| Broche G5 | I/O8 — Data I/O 8 |
| Broche G6 | I/O9 — Data I/O 9 |
| Broche H1 | VSS — Ground |
| Broche H2 | I/O10 — Data I/O 10 |
| Broche H3 | I/O11 — Data I/O 11 |
| Broche H4 | I/O12 — Data I/O 12 |
| Broche H5 | I/O13 — Data I/O 13 |
| Broche H6 | I/O14 — Data I/O 14 |
| Broche J1 | NC — Not connected (per datasheet) |
| Broche J2 | I/O15 — Data I/O 15 |
| Broche J3 | NC — Not connected (per datasheet) |
| Broche J4 | NC — Not connected (per datasheet) |
| Broche J5 | NC — Not connected (per datasheet) |
| Broche J6 | NC — Not connected (per datasheet) |
Applications typiques
RMWV3216AGBG-5S2#AC0 convient pour 7 applications: Industrial Data Logger, Factory Automation Controller, Point-of-Sale Terminal, Automotive Infotainment Buffer, Medical Handheld Instrument, Networking Line Card Buffer, Battery-Backed Energy Meter.
Industrial Data Logger
The RMWV3216AGBG-5S2#AC0 fits industrial data loggers because its 32 Mbit (4 MB) capacity buffers hours of sensor samples before batch upload, while 2.7-3.6 V single-supply operation lets it share a 3.3 V rail with the MCU. The 55 ns access time keeps up with 16-bit ADC bursts up to ~18 MHz, and the device's low standby current preserves buffered data on coin-cell backup during power loss. Independent UB/LB byte enables simplify 8-bit register-mapped logging. Recommended companion: PIC32MX550F256L-I/PT for the host MCU and PIC32MX270F512L-50I/PF for higher-end logging.
Recommandé
Factory Automation Controller
Factory automation PLCs benefit from the RMWV3216AGBG-5S2#AC0's 4 MB shadow-RAM for retentive I/O state and recipe storage, where its 2.7-3.6 V supply simplifies integration with 3.3 V industrial backplanes. The 48-ball TFBGA footprint is far smaller than legacy TSOP async SRAMs, enabling denser PLC modules. The I-temperature grade (-40 to +85 °C) matches IEC 61131-2 industrial environments. The 55 ns access is fast enough for sub-millisecond scan cycles in mid-range PLCs.
Recommandé
Point-of-Sale Terminal
POS terminals use the RMWV3216AGBG-5S2#AC0 as transaction-log buffer memory because 4 MB holds thousands of sale records between network uploads. The 3.3 V supply aligns with the terminal's main logic rail, and the asynchronous interface lets any 16-bit-capable host controller (ARM, RX, RL78) read/write without glue logic. Low standby current extends battery-backed operation during power blips, which is critical for receipt-print integrity. Recommended companion: PEX88096B0-DB for PCI Express bridging and NCR18650GA for backup cell.
Recommandé
Automotive Infotainment Buffer
Automotive infotainment head units use the RMWV3216AGBG-5S2#AC0 as audio buffer and navigation-map scratchpad memory because 4 MB holds several seconds of decoded audio or vector-map tiles. The H-temp (-5S2#HA0) variant supports the +105 °C under-dash thermal environment. The asynchronous parallel interface is deterministic for the audio DSP, avoiding the bus-arbitration delays of SDRAM. Low standby current keeps RAM contents alive during engine-off periods on the car battery.
Recommandé
Medical Handheld Instrument
Medical handheld devices (glucose meters, pulse oximeters, portable ECGs) benefit from the RMWV3216AGBG-5S2#AC0's 32 Mbit density for patient-record buffering while the asynchronous 55 ns access is plenty fast for low-bandwidth sensor sampling. The 2.7-3.6 V supply supports direct Li-ion battery connection, and the I-temp rating covers body-temperature-adjacent enclosures. Low-power Advanced LPSRAM technology extends battery life between charges compared to standard async SRAM. Recommended companion: REF102AU for precision ADC reference.
Recommandé
Networking Line Card Buffer
Networking line cards and routers use the RMWV3216AGBG-5S2#AC0 as a fast packet buffer for QoS queues where the 55 ns read/write latency is essential for cut-through switching. The 16-bit data bus is bit-aligned with most NPU (Network Processor Unit) external memory interfaces, eliminating glue logic. The 3.3 V supply is standard on telecom line cards. The 48-ball TFBGA footprint supports dense multi-MAC designs on a single line-card PCB. Recommended companion: P1020NXN2HFB for the NPU and PFL2015-682MEC for power-line filtering.
Recommandé
Battery-Backed Energy Meter
Smart electricity meters and gas-meter data concentrators use the RMWV3216AGBG-5S2#AC0 as retentive consumption-log memory because its low standby current extends coin-cell backup life beyond 10 years. The 32 Mbit capacity holds months of interval-data records at 15-minute resolution for thousands of endpoints. The 2.0 V data-retention mode preserves memory contents even when the main 3.3 V rail collapses during blackout. Recommended companion: PIC18F26K22-I/ML for the metering MCU and NUD3124DMT1G for the relay driver.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour RMWV3216AGBG-5S2#AC0 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | RMWV3216AGBG-5S1#AC0 | RMWV3216AGBG-5S0#AC0 | RMWV3216AGBG-5S2#HA0 | RMWV3216AGBG-5S2#KC0 | CY62157EV30L-45BVXI | IS62WV51216BLL-55TLI |
|---|---|---|---|---|---|---|---|
| Package | 48-TFBGA (7.5x8.5) | 48-TFBGA (7.5x8.5) - same | 48-TFBGA (7.5x8.5) - same | 48-TFBGA (7.5x8.5) - same | 48-TFBGA (7.5x8.5) - same | 48-VFBGA MoBL - similar BGA class | 48-TSOP-I - different package |
| Brand | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics | Cypress Semiconductor (Infineon) | ISSI |
| Density | 32 Mbit (4 MB) | 32 Mbit | 32 Mbit | 32 Mbit | 32 Mbit | 8 Mbit (-75%) | 8 Mbit (-75%) |
| Organization | 2M × 16 | 2M × 16 | 2M × 16 | 2M × 16 | 2M × 16 | 512K × 16 | 512K × 16 |
| Access Time | 55 ns | 45 ns (-18%) | 70 ns (+27%) | 55 ns | 55 ns | 45 ns (-18%) | 55 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.4 V to 3.6 V |
| Operating Temperature | -40 °C to +85 °C (I-Temp) | -40 °C to +85 °C (I-Temp) | -40 °C to +85 °C (I-Temp) | -40 °C to +105 °C (H-Temp) | -40 °C to +125 °C (K-Temp / Auto) | -40 °C to +85 °C | -40 °C to +85 °C |
| Byte Enables (UB/LB) | Yes | Yes | Yes | Yes | Yes | Yes (BHE/BLE) | Yes (LB/UB) |
| Output Type | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Principaux différenciateurs
- Highest-density 32 Mbit (4 MB) parallel LPSRAM in a 48-ball TFBGA from Renesas at this speed grade (vs CY62157EV30L-45BVXI)
- Drop-in speed-grade family (5S0/5S1/5S2) on the same 48-TFBGA footprint (vs RMWV3216AGBG-5S1#AC0)
- Wide temperature grade options within the same ball pattern (vs RMWV3216AGBG-5S2#HA0 / #KC0)
Notes de conception
Place a 0.1 µF ceramic decoupling capacitor within 5 mm of every VCC ball (E6, G1) and a 10 µF bulk ceramic or tantalum on the supply rail. The Advanced LPSRAM core draws brief current spikes during read/write transitions; bulk capacitance prevents supply droop that would corrupt the access timing. For battery-backup designs, route a separate diode-OR'd 3.0 V rail from a coin cell to support the 2.0 V data-retention mode when the main 3.3 V rail collapses.
Use a 4-layer PCB with a continuous ground plane directly under the 48-ball TFBGA footprint to minimize return-path inductance for the high-speed address and data transitions. BGA fan-out must use 0.5 mm pitch via-in-pad or micro-via structure to escape the 7.5×8.5 mm package; trace impedance should be 50 Ω ±10% with matched trace lengths within 1 cm on the 16-bit data group to preserve the 55 ns timing budget at full bus loading (≥30 pF).
Keep address/data bus traces shorter than 50 mm total to stay within the 55 ns access-time budget at the rated 30 pF load. Series-terminate each data line with 33 Ω near the SRAM if the host is a high-drive-strength controller; otherwise undershoot/ringing can cause double-clock reads. Decouple OE and WE traces separately because asynchronous SRAMs interpret glitches on these strobes as unintended reads or writes.
Do not leave UB and LB floating - tie both to GND through 10 kΩ pull-downs if the application does not use byte control, or to VCC if the host only performs word-aligned accesses. Floating byte-enable inputs can cause intermittent data corruption on one half of the 16-bit word. Also, do not write to the device while VCC is below 2.7 V during power-up; the on-chip write-protect voltage detector requires a clean monotonic ramp ≥100 µs from 0 V to 3.3 V.
Informations de conformité
RoHS compliant per Renesas product page. Standard I-Temp grade is not AEC-Q100 qualified; use RMWV3216AGBG-5S2#KC0 K-Temp variant for automotive. Halogen-free status not stated in available web data - marked unknown.
