RMWV3216AGBG-5S2#AC0 - 32Mb Advanced LPSRAM, 2Mx16, 55ns | Renesas
料号： RMWV3216AGBG-5S2#AC0 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.78 | $37.80 |
| 100 | $3.36 | $336.00 |
| 500 | $2.94 | $1,470.00 |
| 1,000 | $2.65 | $2,650.00 |
RMWV3216AGBG-5S2#AC0 概述
An LPSRAM (Low-Power SRAM) is a class of asynchronous static random-access memory that retains data without refresh and offers dramatically lower active and standby current than conventional SRAM. LPSRAM sits in the broader memory hierarchy between volatile DRAM (which needs refresh and is dense) and true non-volatile memory (Flash/EEPROM, which is slow to write). Within Renesas's portfolio, Advanced LPSRAM targets battery-backed and energy-harvesting applications where every microwatt of quiescent current matters, while still delivering the byte-level random access that Flash cannot.
Key features include very low standby current for battery-backup retention, a wide 2.7 V to 3.6 V single-rail supply range that simplifies power-tree design, common parallel SRAM interface pinout (CS, OE, WE, UB/LB byte enables) for drop-in replacement of legacy async SRAMs, and 3-STATE outputs for bus-sharing. The 48-ball TFBGA footprint is also substantially smaller than TSOP or SOJ packaging used by older 32-Mbit parallel SRAMs.
Technically, the device uses a six-transistor (6T) CMOS memory cell array with on-chip address decoding and sense amplifiers, plus internal voltage generation for the memory core. The die is organized as 2M × 16 with separate upper-byte and lower-byte write enables (UB, LB), which simplifies 8-bit and 16-bit bus designs in the same socket. Power-saving features include automatic power-down when CS is deselected, plus data-retention modes down to 2.0 V for coin-cell backup.
Typical applications include industrial metering and data loggers, factory automation controllers, point-of-sale terminals, automotive infotainment buffers, medical handheld instruments, networking line cards requiring fast read/write buffers, and battery-backed equipment such as e-meter or PLC retentive memory. The low standby current makes it attractive as a shadow RAM for systems that must preserve state through power loss.
When designing with this part, follow the datasheet's decoupling guideline of a 0.1 µF ceramic capacitor placed within 5 mm of each VCC ball, plus a bulk 10 µF tantalum or ceramic on the supply rail. Place the device close to the host controller to keep the address/data bus traces short, since the 55 ns access time assumes modest capacitive loading.
This page synthesizes distributor pricing and stock, drop-in alternative comparisons across Renesas's own RMWV3216A speed-grade family and competing 48-ball TFBGA LPSRAMs, and practical design notes not consolidated in the manufacturer datasheet.
直接替换替代料： RMWV3216AGBG-5S2#AC0 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
RMWV3216AGBG-5S1#AC0
✅ 直接替换📋 参考替代料（不在目录中）
RMWV3216AGBG-5S0#AC0
✅ 直接替换📋 参考替代料（不在目录中）
RMWV3216AGBG-5S2#HA0
✅ 直接替换📋 参考替代料（不在目录中）
RMWV3216AGBG-5S2#KC0
✅ 直接替换📋 参考替代料（不在目录中）
CY62157EV30L-45BVXI
✅ 直接替换📋 参考替代料（不在目录中）
RMWV3216AGBG-5S2#AC0 最大额定值与电气特性
| 存储器类型 | Volatile SRAM (Asynchronous LPSRAM) |
| 存储容量 | 32 Mbit (4 MB) |
| 存储组织 | 2M words × 16 bits |
| 接口 | Parallel (asynchronous) |
| Access Time | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V |
| 工作温度 | -40 °C to +85 °C (I-Temp) |
| 封装 | 48-ball TFBGA, 7.5 mm × 8.5 mm |
| 输出类型 | 3-STATE |
| Byte Enables | UB (Upper Byte), LB (Lower Byte) |
| Write Control | Active-low WE, active-low CS |
| Output Enable | Active-low OE |
| 安装类型 | Surface Mount (BGA) |
| RoHS 状态 | Compliant |
| Technology | Renesas Advanced LPSRAM CMOS |
RMWV3216AGBG-5S2#AC0 引脚配置
| 引脚 A1 | NC — Not connected (per datasheet) |
| 引脚 A2 | A0 — Address input 0 |
| 引脚 A3 | A1 — Address input 1 |
| 引脚 A4 | A2 — Address input 2 |
| 引脚 A5 | A3 — Address input 3 |
| 引脚 A6 | A4 — Address input 4 |
| 引脚 B1 | NC — Not connected (per datasheet) |
| 引脚 B2 | A5 — Address input 5 |
| 引脚 B3 | A6 — Address input 6 |
| 引脚 B4 | A7 — Address input 7 |
| 引脚 B5 | A8 — Address input 8 |
| 引脚 B6 | A9 — Address input 9 |
| 引脚 C1 | CS — Chip select (active low) |
| 引脚 C2 | A10 — Address input 10 |
| 引脚 C3 | A11 — Address input 11 |
| 引脚 C4 | A12 — Address input 12 |
| 引脚 C5 | A13 — Address input 13 |
| 引脚 C6 | A14 — Address input 14 |
| 引脚 D1 | OE — Output enable (active low) |
| 引脚 D2 | A15 — Address input 15 |
| 引脚 D3 | A16 — Address input 16 |
| 引脚 D4 | A17 — Address input 17 |
| 引脚 D5 | A18 — Address input 18 |
| 引脚 D6 | A19 — Address input 19 |
| 引脚 E1 | WE — Write enable (active low) |
| 引脚 E2 | A20 — Address input 20 |
| 引脚 E3 | NC — Not connected (per datasheet) |
| 引脚 E4 | LB — Lower byte enable (active low) |
| 引脚 E5 | UB — Upper byte enable (active low) |
| 引脚 E6 | VCC — Power supply |
| 引脚 F1 | I/O0 — Data I/O 0 |
| 引脚 F2 | I/O1 — Data I/O 1 |
| 引脚 F3 | I/O2 — Data I/O 2 |
| 引脚 F4 | I/O3 — Data I/O 3 |
| 引脚 F5 | I/O4 — Data I/O 4 |
| 引脚 F6 | VSS — Ground |
| 引脚 G1 | VCC — Power supply |
| 引脚 G2 | I/O5 — Data I/O 5 |
| 引脚 G3 | I/O6 — Data I/O 6 |
| 引脚 G4 | I/O7 — Data I/O 7 |
| 引脚 G5 | I/O8 — Data I/O 8 |
| 引脚 G6 | I/O9 — Data I/O 9 |
| 引脚 H1 | VSS — Ground |
| 引脚 H2 | I/O10 — Data I/O 10 |
| 引脚 H3 | I/O11 — Data I/O 11 |
| 引脚 H4 | I/O12 — Data I/O 12 |
| 引脚 H5 | I/O13 — Data I/O 13 |
| 引脚 H6 | I/O14 — Data I/O 14 |
| 引脚 J1 | NC — Not connected (per datasheet) |
| 引脚 J2 | I/O15 — Data I/O 15 |
| 引脚 J3 | NC — Not connected (per datasheet) |
| 引脚 J4 | NC — Not connected (per datasheet) |
| 引脚 J5 | NC — Not connected (per datasheet) |
| 引脚 J6 | NC — Not connected (per datasheet) |
典型应用
RMWV3216AGBG-5S2#AC0 适用于 7 应用s: Industrial Data Logger, Factory Automation Controller, Point-of-Sale Terminal, Automotive Infotainment Buffer, Medical Handheld Instrument, Networking Line Card Buffer, Battery-Backed Energy Meter.
Industrial Data Logger
The RMWV3216AGBG-5S2#AC0 fits industrial data loggers because its 32 Mbit (4 MB) capacity buffers hours of sensor samples before batch upload, while 2.7-3.6 V single-supply operation lets it share a 3.3 V rail with the MCU. The 55 ns access time keeps up with 16-bit ADC bursts up to ~18 MHz, and the device's low standby current preserves buffered data on coin-cell backup during power loss. Independent UB/LB byte enables simplify 8-bit register-mapped logging. Recommended companion: PIC32MX550F256L-I/PT for the host MCU and PIC32MX270F512L-50I/PF for higher-end logging.
推荐
Factory Automation Controller
Factory automation PLCs benefit from the RMWV3216AGBG-5S2#AC0's 4 MB shadow-RAM for retentive I/O state and recipe storage, where its 2.7-3.6 V supply simplifies integration with 3.3 V industrial backplanes. The 48-ball TFBGA footprint is far smaller than legacy TSOP async SRAMs, enabling denser PLC modules. The I-temperature grade (-40 to +85 °C) matches IEC 61131-2 industrial environments. The 55 ns access is fast enough for sub-millisecond scan cycles in mid-range PLCs.
推荐
Point-of-Sale Terminal
POS terminals use the RMWV3216AGBG-5S2#AC0 as transaction-log buffer memory because 4 MB holds thousands of sale records between network uploads. The 3.3 V supply aligns with the terminal's main logic rail, and the asynchronous interface lets any 16-bit-capable host controller (ARM, RX, RL78) read/write without glue logic. Low standby current extends battery-backed operation during power blips, which is critical for receipt-print integrity. Recommended companion: PEX88096B0-DB for PCI Express bridging and NCR18650GA for backup cell.
推荐
Automotive Infotainment Buffer
Automotive infotainment head units use the RMWV3216AGBG-5S2#AC0 as audio buffer and navigation-map scratchpad memory because 4 MB holds several seconds of decoded audio or vector-map tiles. The H-temp (-5S2#HA0) variant supports the +105 °C under-dash thermal environment. The asynchronous parallel interface is deterministic for the audio DSP, avoiding the bus-arbitration delays of SDRAM. Low standby current keeps RAM contents alive during engine-off periods on the car battery.
推荐
Medical Handheld Instrument
Medical handheld devices (glucose meters, pulse oximeters, portable ECGs) benefit from the RMWV3216AGBG-5S2#AC0's 32 Mbit density for patient-record buffering while the asynchronous 55 ns access is plenty fast for low-bandwidth sensor sampling. The 2.7-3.6 V supply supports direct Li-ion battery connection, and the I-temp rating covers body-temperature-adjacent enclosures. Low-power Advanced LPSRAM technology extends battery life between charges compared to standard async SRAM. Recommended companion: REF102AU for precision ADC reference.
推荐
Networking Line Card Buffer
Networking line cards and routers use the RMWV3216AGBG-5S2#AC0 as a fast packet buffer for QoS queues where the 55 ns read/write latency is essential for cut-through switching. The 16-bit data bus is bit-aligned with most NPU (Network Processor Unit) external memory interfaces, eliminating glue logic. The 3.3 V supply is standard on telecom line cards. The 48-ball TFBGA footprint supports dense multi-MAC designs on a single line-card PCB. Recommended companion: P1020NXN2HFB for the NPU and PFL2015-682MEC for power-line filtering.
推荐
Battery-Backed Energy Meter
Smart electricity meters and gas-meter data concentrators use the RMWV3216AGBG-5S2#AC0 as retentive consumption-log memory because its low standby current extends coin-cell backup life beyond 10 years. The 32 Mbit capacity holds months of interval-data records at 15-minute resolution for thousands of endpoints. The 2.0 V data-retention mode preserves memory contents even when the main 3.3 V rail collapses during blackout. Recommended companion: PIC18F26K22-I/ML for the metering MCU and NUD3124DMT1G for the relay driver.
推荐
推荐产品汇总
工程参考数据： RMWV3216AGBG-5S2#AC0 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | RMWV3216AGBG-5S1#AC0 | RMWV3216AGBG-5S0#AC0 | RMWV3216AGBG-5S2#HA0 | RMWV3216AGBG-5S2#KC0 | CY62157EV30L-45BVXI | IS62WV51216BLL-55TLI |
|---|---|---|---|---|---|---|---|
| Package | 48-TFBGA (7.5x8.5) | 48-TFBGA (7.5x8.5) - same | 48-TFBGA (7.5x8.5) - same | 48-TFBGA (7.5x8.5) - same | 48-TFBGA (7.5x8.5) - same | 48-VFBGA MoBL - similar BGA class | 48-TSOP-I - different package |
| Brand | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics | Cypress Semiconductor (Infineon) | ISSI |
| Density | 32 Mbit (4 MB) | 32 Mbit | 32 Mbit | 32 Mbit | 32 Mbit | 8 Mbit (-75%) | 8 Mbit (-75%) |
| Organization | 2M × 16 | 2M × 16 | 2M × 16 | 2M × 16 | 2M × 16 | 512K × 16 | 512K × 16 |
| Access Time | 55 ns | 45 ns (-18%) | 70 ns (+27%) | 55 ns | 55 ns | 45 ns (-18%) | 55 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.4 V to 3.6 V |
| Operating Temperature | -40 °C to +85 °C (I-Temp) | -40 °C to +85 °C (I-Temp) | -40 °C to +85 °C (I-Temp) | -40 °C to +105 °C (H-Temp) | -40 °C to +125 °C (K-Temp / Auto) | -40 °C to +85 °C | -40 °C to +85 °C |
| Byte Enables (UB/LB) | Yes | Yes | Yes | Yes | Yes | Yes (BHE/BLE) | Yes (LB/UB) |
| Output Type | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
关键差异点
- Highest-density 32 Mbit (4 MB) parallel LPSRAM in a 48-ball TFBGA from Renesas at this speed grade （对比 CY62157EV30L-45BVXI)
- Drop-in speed-grade family (5S0/5S1/5S2) on the same 48-TFBGA footprint （对比 RMWV3216AGBG-5S1#AC0)
- Wide temperature grade options within the same ball pattern （对比 RMWV3216AGBG-5S2#HA0 / #KC0)
设计说明
Place a 0.1 µF ceramic decoupling capacitor within 5 mm of every VCC ball (E6, G1) and a 10 µF bulk ceramic or tantalum on the supply rail. The Advanced LPSRAM core draws brief current spikes during read/write transitions; bulk capacitance prevents supply droop that would corrupt the access timing. For battery-backup designs, route a separate diode-OR'd 3.0 V rail from a coin cell to support the 2.0 V data-retention mode when the main 3.3 V rail collapses.
Use a 4-layer PCB with a continuous ground plane directly under the 48-ball TFBGA footprint to minimize return-path inductance for the high-speed address and data transitions. BGA fan-out must use 0.5 mm pitch via-in-pad or micro-via structure to escape the 7.5×8.5 mm package; trace impedance should be 50 Ω ±10% with matched trace lengths within 1 cm on the 16-bit data group to preserve the 55 ns timing budget at full bus loading (≥30 pF).
Keep address/data bus traces shorter than 50 mm total to stay within the 55 ns access-time budget at the rated 30 pF load. Series-terminate each data line with 33 Ω near the SRAM if the host is a high-drive-strength controller; otherwise undershoot/ringing can cause double-clock reads. Decouple OE and WE traces separately because asynchronous SRAMs interpret glitches on these strobes as unintended reads or writes.
Do not leave UB and LB floating - tie both to GND through 10 kΩ pull-downs if the application does not use byte control, or to VCC if the host only performs word-aligned accesses. Floating byte-enable inputs can cause intermittent data corruption on one half of the 16-bit word. Also, do not write to the device while VCC is below 2.7 V during power-up; the on-chip write-protect voltage detector requires a clean monotonic ramp ≥100 µs from 0 V to 3.3 V.
合规信息
RoHS compliant per Renesas product page. Standard I-Temp grade is not AEC-Q100 qualified; use RMWV3216AGBG-5S2#KC0 K-Temp variant for automotive. Halogen-free status not stated in available web data - marked unknown.
