STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST
Référence : STS4DNF60L ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.62 | $1,62 |
| 10 | $1.34 | $13,40 |
| 100 | $0.97 | $97,00 |
| 500 | $0.78 | $390,00 |
| 1 000 | $0.65 | $650,00 |
| 3 000 | $0.54 | $1 620,00 |
STS4DNF60L Présentation
Background Knowledge: A Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and amplify signals in power-conversion circuits. The N-channel variant requires the gate to be driven positive relative to the source to turn on. A dual (half-bridge or dual-N) MOSFET array combines two N-channel devices on a single die and is most often deployed as a low-side and high-side pair in synchronous buck converters, motor half-bridges, or as two independent load switches. The STripFET family specifically targets low gate charge and low on-resistance per unit area, optimizing conduction loss and switching speed for switch-mode power supplies (SMPS) operating in the 100 kHz to 1 MHz range.
Key features of the STS4DNF60L include a typical R_DS(on) of 0.045 Ω at V_GS = 10 V, a continuous drain current of 4 A per channel, low threshold drive (logic-level-compatible enhancement mode), standard SO-8 outline for automated surface-mount assembly, and avalanche-rated switching robustness. The dual-die construction halves the PCB footprint versus two discrete equivalents, while the STripFET process minimizes reverse-recovery charge (Q_rr) for efficient synchronous rectification.
Architecturally, the device uses STMicroelectronics' STripFET process which combines a fine-pitch strip cell layout with a low-resistance substrate to balance on-resistance, gate charge, and ruggedness. The resulting transistor exhibits excellent manufacturing reproducibility and is well suited to high-frequency DC-DC converter stages, where low Q_g and low Q_rr reduce switching loss and diode losses respectively.
Typical applications for the STS4DNF60L include synchronous buck converters in low-voltage DC-DC regulators, battery protection and load management circuits, DC motor control in consumer appliances and small industrial drives, USB Type-C VBUS power switching, and small Uninterruptible Power Supplies (UPS) or solar microinverter auxiliary rails.
When designing with this part, ensure that the gate-drive voltage reaches at least 4.5 V for full enhancement (R_DS(on) is specified at V_GS = 10 V). Use a gate resistor (typically 10 Ω to 100 Ω) to control ringing and dv/dt, and keep the high-di/dt loop (drain-to-source of each channel plus its bypass capacitor) physically short to limit voltage overshoot and EMI.
This page synthesizes distributor pricing, drop-in alternatives, comparison parameters, and practical PCB/design notes that go beyond the manufacturer datasheet, helping engineers select and source the STS4DNF60L with confidence.
Alternatives de remplacement direct pour STS4DNF60L — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec STS4DNF60L (même facteur de forme et même empreinte) — différant par On-Resistance R_DS(on) (max), Package, Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
STS5DNF60L
✅ Remplacement direct✓ En stock
$0.48 / unité
Voir la fiche technique →STS5NF60L
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
STD4NE10LT4
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
IRFML6344TRPBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NTTFS4939NT1G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
Si4236DY-T1-GE3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
AO4822
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
STS4DNF60L Valeurs maximales et caractéristiques électriques
| Type de transistor | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (V_DS) | 60 V |
| Continuous Drain Current (I_D) | 4 A per channel |
| On-Resistance R_DS(on) (typ) | 0.045 Ω at V_GS = 10 V |
| On-Resistance R_DS(on) (max) | < 0.055 Ω |
| Total Power Dissipation (P_tot) | 2 W |
| Gate Drive | Low threshold drive (logic-level compatible) |
| Boîtier | SO-8 (8-pin, surface mount) |
| Type de montage | Surface Mount |
| Plage de température de fonctionnement | -55 °C to +175 °C (junction) |
| Technology | STripFET (strip-based, 2nd generation) |
| Number of Channels | 2 (dual N-channel on one die) |
| Niveau MSL | 1 per JEDEC J-STD-020 |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Manufacturing Process | STripFET "Single Feature Size" strip-based process |
Configuration des broches de STS4DNF60L
| Broche 1 | S1 — Source of MOSFET 1 |
| Broche 2 | G1 — Gate of MOSFET 1 |
| Broche 3 | S2 — Source of MOSFET 2 |
| Broche 4 | G2 — Gate of MOSFET 2 |
| Broche 5 | D1 — Drain of MOSFET 1 (internally tied to D2 and exposed pad) |
| Broche 6 | D1 — Drain of MOSFET 1 (internally tied to D2 and exposed pad) |
| Broche 7 | D2 — Drain of MOSFET 2 (internally tied to D1 and exposed pad) |
| Broche 8 | D2 — Drain of MOSFET 2 (internally tied to D1 and exposed pad) |
Zone de fonctionnement sûr - STS4DNF60L SO-8 (per ST datasheet)
Applications typiques
STS4DNF60L convient pour 7 applications: Synchronous Buck DC-DC Converter, USB Type-C VBUS Load Switch, DC Motor H-Bridge Driver, Battery Management / Load Switch, Solar Microinverter Auxiliary Rail, POL Converter for DSP/MCU Power Rails, Hot-Swap / In-Rush Current Limiter.
Synchronous Buck DC-DC Converter
The STS4DNF60L's dual N-channel SO-8 integration makes it a strong fit for 12 V-input synchronous buck converters up to roughly 4 A continuous load. With R_DS(on) of just 0.045 Ω at V_GS = 10 V per channel, the low-side synchronous-rectifier FET dissipates only ~0.72 W at 4 A (4 A² × 0.045 Ω) - easily handled by 1 square-inch of 2 oz copper. STMicroelectronics' STripFET process also yields a low Q_rr, which reduces deadtime losses in the body-diode reverse recovery transition. For higher current designs, STS5DNF60L (60 V / 5 A) shares this SO-8 pinout and is a drop-in upgrade. The 60 V V_DS rating provides ample headroom for 12 V automotive and 24 V industrial rails when clamped with a small snubber.
Recommandé
USB Type-C VBUS Load Switch
USB Type-C VBUS switching to 5 V / 3 A typically uses a dual MOSFET array such as the STS4DNF60L to combine high-side (or low-side) load-switch FETs and reverse-current blocking on a single SO-8 footprint. Two N-channels allow either a back-to-back configuration for true reverse-current blocking, or paralleling both channels for lower total R_DS(on) (~22.5 mΩ when two 0.045 Ω channels parallel). The 60 V V_DS comfortably tolerates 5 V VBUS plus inductive transients, and STripFET's low Q_rr reduces inrush ringing during hot-plug events. Designers often pair the STS4DNF60L with a TCPP01-M12 USB Type-C port protector or a discrete gate-driver from the STM32 ecosystem. Below 5 V at 1.5 A, both channels can be paralleled to keep conduction loss below 100 mW.
Recommandé
DC Motor H-Bridge Driver
For small brushed-DC or low-power BLDC motors below 4 A continuous phase current, the STS4DNF60L can act as one half-bridge of a discrete H-bridge: each device provides one high-side switch (driven via a bootstrap gate driver) and one low-side switch, simplifying PCB layout by combining both halves of a phase leg into one SO-8 footprint. The 60 V drain rating handles 12-24 V motor supplies easily, and STripFET's low charge (typical Q_g around 10-15 nC per channel) keeps PWM transition times under 50 ns - fast enough for 20-40 kHz PWM frequency. Conduction loss at 3 A continuous per channel is ~0.4 W, fit for natural-convection cooling on a 1 oz copper pour. For higher-current motor stages, the cross-brand NTTFS4939NT1G (60 V / 7.5 A) is a drop-in SO-8 upgrade, and the Si8380P-IU gate driver pairs well in isolated industrial drives.
Recommandé
Battery Management / Load Switch
Battery-pack protection boards in 1S-4S Li-ion or LiFePO4 packs frequently use dual N-channel MOSFETs such as the STS4DNF60L to form back-to-back high-side and low-side switches for charge/discharge FET (CHG/DSG) control. The 60 V V_DS is well above 1S-4S Li-ion string voltages (5 V to 18 V) and tolerates load-dump transients in e-bike battery packs. STripFET's low R_DS(on) of 0.045 Ω keeps conduction loss around 0.45 W at 3 A average discharge current, so 1 square inch of copper is enough for thermal management without a heatsink. The dual-channel SO-8 pinout halves PCB area versus two discrete DPAK FETs, critical in battery-mounted BMS modules. Combined with an AFE IC like ST's STC3100, the STS4DNF60L implements compact cell balancing and pack-level load switching.
Recommandé
Solar Microinverter Auxiliary Rail
In small (<200 W) solar microinverter and solar-LED-driver auxiliary rails, the STS4DNF60L provides efficient synchronous rectification on the 12 V to 24 V auxiliary output stage. Its STripFET origin ensures low reverse-recovery charge for the auxiliary synchronous-rectifier FET (Q_rr minimized in the strip-based cell layout), reducing circulating energy loss and easing EMI filter design. With V_DS of 60 V the device tolerates 24 V photovoltaic panel open-circuit transients within regulated limits; in industrial solar charge controllers the same SO-8 dual pinout supports 4 A MPPT auxiliary rails. ST's typical application circuit places the STS4DNF60L as a synchronous rectifier following a flyback or forward converter with sub-1% total loss contribution from the FET stage.
Recommandé
POL Converter for DSP/MCU Power Rails
Point-of-Load (POL) converters feeding digital loads such as DSPs, FPGAs, and high-performance MCUs benefit from the STS4DNF60L's compact dual-FET SO-8 footprint. Modern DSPs like the STM32H7 or SAM9X60 typically require multiple low-voltage rails (1.2 V core, 3.3 V IO), and the STS4DNF60L can serve as the synchronous rectifier in 3.3 V / 4 A or 1.8 V POL stages with high efficiency (>92%). The 0.045 Ω R_DS(on) per channel minimizes conduction loss, while the SO-8 industry's standard pinout supports automated optical-inspection on production lines. Combined with a low-cost controller like the STM32G431 and a coupled inductor in a small SEPIC or buck topology, the STS4DNF60L enables compact POL designs under 1 square inch of PCB area while staying cool without an external heatsink.
Recommandé
Hot-Swap / In-Rush Current Limiter
Hot-swap controllers in 12 V / 24 V server backplanes, fan trays, and PCIe cards often use a dual N-channel pair such as the STS4DNF60L for back-to-back blocking FETs to support true reverse-current blocking during card insertion. With 60 V V_DS the device accepts transients on 24 V industrial buses, while the low Q_rr simplifies dV/dt-controlled soft-start using a gate resistor network. The dual SO-8 channel layout accepts parallel-channel operation to halve conduction loss when handling sustained 3 A loads. Designers may also pair the STS4DNF60L with a hot-swap controller IC from ST's or Analog Devices' product lines for combined current-sense and timing functions, useful in ATX power rails and PoE powered-device applications where inrush control matters for downstream capacitor and connector longevity.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour STS4DNF60L — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | STS5DNF60L | STS5NF60L | STD4NE10LT4 | IRFML6344TRPBF | NTTFS4939NT1G |
|---|---|---|---|---|---|---|
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (V_DS) | 60 V | 60 V | 60 V | 100 V | 60 V | 60 V |
| Continuous Drain Current | 4 A per channel | 5 A per channel | 5 A (single channel) | 4.5 A (single channel) | 5 A per channel | 7.5 A (single channel) |
| On-Resistance R_DS(on) | 0.045 Ω (typ) at V_GS = 10 V | ~0.045 Ω | ~0.045 Ω | ~0.045 Ω | ~0.04 Ω | ~0.030 Ω |
| Channel Count | Dual N-channel | Dual N-channel | Single N-channel | Single N-channel | Dual N-channel | Single N-channel |
| Gate Drive Level | Logic-level (L-suffix) | Logic-level | Logic-level | Logic-level | Logic-level | Standard |
| Technology | STripFET | STripFET | STripFET | STripFET | HexFET/MOSFET | PowerTrench |
| Unit Price (qty-1, USD) | $1.62 | $1.85 | $1.50 | $1.40 | $1.55 | $1.95 |
Principaux différenciateurs
- Dual N-channel integration in SO-8 (vs STS5NF60L)
- Logic-level gate drive (L-suffix) (vs NTTFS4939NT1G)
- Low Q_rr STripFET process (vs IRFML6344TRPBF)
- Same-brand STripFET family scale-up path (vs STS5DNF60L)
Notes de conception
At 4 A continuous per channel with R_DS(on) of 0.045 Ω, each MOSFET dissipates ~0.72 W, so dual-channel operation with parallel channels (4 A total) at the same R_DS(on) gives ~0.36 W combined, well within the SO-8's 2 W total package rating if mounted on at least 1 square inch of 2 oz copper. For worst-case single-channel 4 A operation, ensure the drain copper-pour area is connected directly to the SO-8 exposed tab, because without the thermal pad the SO-8 package is rated to only ~1.5 W. If the layout forces the exposed pad to drain and ambient air only, derate to roughly 60 percent of datasheet figures (estimated based on JEDEC EIA/JESD51-7 standard SO-8 PCB thermal characteristics).
Place gate-drive resistors (10 Ω to 100 Ω) close to the STS4DNF60L's G1 and G2 pins to dampen parasitic ringing on the high-di/dt switching loops. Keep the high-current drain-to-source loop of each channel (pin 5-6 to pin 7-8 plus bypass capacitor) as small as possible - aim for less than 5 nH total - by using wide copper pours, microvias, and a high-frequency decoupling ceramic (10 nF to 100 nF X7R) directly across each channel's drain and source. The exposed underside pad is internally tied to drain and must be soldered to a copper-pour drain heat-spreader for thermal relief and EMI control.
The STS4DNF60L's STSxDNF60L family uses pin 5-6-7-8 as the common drain of both channels - if the part is mistakenly inserted as a single N-channel SO-8 (typical single-FET pinout), the high-side gate will be shorted to drain and the IC will fail immediately. Always double-check the pinout against the SO-8 dual-FET standard: pin 1 S1, pin 2 G1, pin 3 S2, pin 4 G2, pin 5-8 D1+D2. Also confirm the gate drive reaches at least 4.5 V for full enhancement - if driven directly from a 3.3 V MCU GPIO, R_DS(on) rises sharply and conduction losses exceed budget. Add a small gate-charge boost or use a gate-driver IC if V_GS is below 4.5 V.
Place the STS4DNF60L so its SO-8 footprint aligned with the drain heatsink copper plane covers at least 25 mm² of continuous copper (single side) or 16 mm² per side (double-sided PCB). Avoid routing signal-level traces (gate driver, PWM) under the package body to reduce capacitive coupling. For synchronous buck layouts, place both channels on the same side of the input capacitor bank with gates driven by a nearby gate-driver IC such as the Si8273ABD or the Si8422AD-D-IS, and route the SW-node (drain) copper trace symmetrically to minimize imbalance between the two channels at high di/dt.
Informations de conformité
RoHS and REACH compliance per STMicroelectronics product page; AEC-Q100 not formally qualified for automotive - for AEC-Q100 needs, contact STMicroelectronics' automotive-grade catalog (STripFET-F2 or STripFET-F7 family).
