STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
Référence : STS5DNF60L ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.35 | $1,35 |
| 10 | $1.18 | $11,80 |
| 100 | $0.95 | $95,00 |
| 500 | $0.78 | $390,00 |
| 1 000 | $0.62 | $620,00 |
| 3 000 | $0.48 | $1 440,00 |
STS5DNF60L Présentation
A power MOSFET is a voltage-controlled semiconductor switch that uses a gate field to modulate current flow between drain and source terminals. The STripFET II process employed in the STS5DNF60L is specifically engineered to minimize input capacitance and gate charge, which sit inside the broader technology hierarchy of trench MOSFET -> power MOSFET -> discrete semiconductor -> active electronic component. Low Q_g directly reduces driver losses in high-frequency switching applications and enables operation from low-current logic-level gate drivers.
Key features include 60 V V_DSS rating, 5 A continuous drain current per channel, 35 mΩ typical R_DS(on) at V_GS = 10 V, low threshold voltage compatible with 3.3 V / 5 V gate drive, low gate charge for fast switching edges, and 100 % avalanche-tested internal construction. The SO-8 footprint provides a standardized land pattern that simplifies automated SMT assembly and supports dual-sided cooling through copper-pour design.
From an architecture standpoint, the dual-die monolithic integration shares a common substrate while keeping source pins electrically isolated, so each transistor can be driven independently in any switching configuration. The STripFET II cell geometry lowers conduction losses versus earlier STripFET generations, improving efficiency in DC-DC converter primary-side switches and secondary-side synchronous rectifiers. Typical turn-on delay times are in the tens of nanoseconds, enabling use at switching frequencies from 100 kHz up to several hundred kHz.
Typical applications include isolated DC-DC converter primary switches for telecom and computer power supplies, secondary-side synchronous rectification in buck converters, motor-driver half-bridges for low-power BLDC drivers, and automotive 12 V/24 V load switches. The 60 V rating provides ample headroom above 24 V industrial bus rails and 12 V automotive transient excursions.
When designing with this part, ensure that gate-drive voltage remains at or above 4.5 V for full enhancement at low temperatures, place the gate-drive resistor within 5 mm of the gate pin to suppress ringing, and keep high-dV/dt loops compact to limit EMI. A low-ESR ceramic bypass of at least 10 µF should sit adjacent to each drain pin for hard-switched topologies.
This page synthesizes real distributor stock data, parametric comparison versus alternates, and practical PCB-layout guidance that goes beyond what the manufacturer datasheet alone provides.
Alternatives de remplacement direct pour STS5DNF60L — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec STS5DNF60L (même facteur de forme et même empreinte) — différant par Technology, Configuration, On-Resistance R_DS(on) (max), Operating Temperature Range, Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
STS5NF60L
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
STS4DNF60L
✅ Remplacement direct✓ En stock
$0.54 / unité
Voir la fiche technique →VBSEMI VBA3638
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRF7319TRPBF
✅ Remplacement direct✓ En stock
$0.62 / unité
Voir la fiche technique →STS5DNF60L Valeurs maximales et caractéristiques électriques
| Drain-to-Source Voltage (V_DSS) | 60 V |
| Continuous Drain Current (I_D) at 25 °C | 5 A per channel |
| On-Resistance R_DS(on) (typ.) | 35 mΩ at V_GS = 10 V |
| On-Resistance R_DS(on) (max) | 45 mΩ at V_GS = 10 V, I_D = 2 A |
| Technology | STripFET II trench N-channel |
| Configuration | Dual independent N-channel |
| Boîtier | SO-8 (8-SOIC, surface mount) |
| Type de montage | Surface Mount |
| Power Dissipation P_D (per datasheet) | 2 W |
| Automotive Grade | Automotive-grade qualified |
| RoHS Compliance | Compliant |
| Avalanche Rating | 100% avalanche tested |
Configuration des broches de STS5DNF60L
| Broche 1 | G1 — Gate of MOSFET 1 |
| Broche 2 | D1 — Drain of MOSFET 1 |
| Broche 3 | S1 — Source of MOSFET 1 |
| Broche 4 | D2 — Drain of MOSFET 2 |
| Broche 5 | D2 — Drain of MOSFET 2 (dual-drain connection for thermal symmetry) |
| Broche 6 | S2 — Source of MOSFET 2 |
| Broche 7 | D2 — Drain of MOSFET 2 |
| Broche 8 | G2 — Gate of MOSFET 2 |
Zone de fonctionnement sûr (per MOSFET die)
Applications typiques
STS5DNF60L convient pour 6 applications: Isolated DC-DC Converter Primary Switch, Secondary-Side Synchronous Rectifier, Motor Driver Half-Bridge, Automotive 12 V/24 V Load Switch, Telecom Power Over Ethernet (PoE) Switch, Industrial 24 V Solenoid and Valve Driver.
Isolated DC-DC Converter Primary Switch
The STS5DNF60L fits the primary-side switch position in 48 V-to-isolated-bus telecom and computing DC-DC converters because its 60 V V_DSS provides 20% headroom above the 48 V input peak, while the 35 mΩ typical R_DS(on) limits conduction loss and the low Q_g keeps driver losses minimal at 100-300 kHz switching. Placed in a half-bridge or push-pull primary, the two channels can drive each side of the transformer independently. Unlike higher-voltage 200 V MOSFETs the STS5DNF60L offers a much smaller Q_OSS and faster switching edges, which improves efficiency and enables smaller magnetics. Use a 10 V gate-drive supply or a high-side bootstrap driver so each die fully enhances at cold temperature.
Recommandé
Secondary-Side Synchronous Rectifier
As the synchronous rectifier on the low-voltage side of a 12 V-input buck converter, the STS5DNF60L delivers 5 A continuous with only 35 mΩ typical conduction loss, so two parallel channels can carry up to 10 A. The low gate charge of the STripFET II process keeps dead-time loss negligible at 300 kHz. The two N-channel dies in one SO-8 footprint replace a Schottky pair and a low-side driver stage, simplifying PCB layout in point-of-load converters for telecom and server applications.
Recommandé
Motor Driver Half-Bridge
The dual-die SO-8 packaging makes the STS5DNF60L a natural fit for a low-power BLDC or DC motor half-bridge leg where space is constrained. Each 5 A channel handles the high-side or low-side of one phase, and the same driver IC can be scaled to a 3-phase inverter by adding two more half-bridges. The 60 V rating absorbs back-EMF spikes from 24 V brushed and 3-phase brushless motors without exceeding V_DSS during transients. Low Q_g permits 25-50 kHz PWM without excessive driver-stage dissipation.
Recommandé
Automotive 12 V/24 V Load Switch
The automotive-grade qualification of the STS5DNF60L makes it directly suited to high-side load switching in 12 V vehicle subsystems such as body-electronics modules, LED drivers, and accessory controls. The two channels can drive two independent loads or be paralleled for higher current. The 60 V V_DSS absorbs load-dump transients on the 12 V bus up to 35 V, providing margin against ISO 7637-2 pulses. Use TVS protection across the drain and verify 175 °C junction temperature compliance for underhood applications.
Recommandé
Telecom Power Over Ethernet (PoE) Switch
Inside a PoE supply or auxiliary 48 V hot-swap controller, the STS5DNF60L operates as the disconnect MOSFET that isolates load during fault conditions. The 60 V V_DSS handles 48 V nominal with margin, the 5 A current capability suits class-3 PoE loads, and the STripFET II technology provides fast current-limit response. The two N-channels in one SO-8 enable paralleling for higher-current PoE+ class-4 designs. Low on-resistance minimizes thermal rise in fanless PoE injectors.
Recommandé
Industrial 24 V Solenoid and Valve Driver
Factory-automation solenoid drivers and pneumatic-valve control benefit from the two independent 5 A MOSFETs in the STS5DNF60L SO-8. Each channel can sink one solenoid and share heat through the SO-8 copper-pour footprint. The 60 V rating absorbs inductive kickback from 24 V coils with adequate margin for IEC 61131-2 transient events. Low R_DS(on) reduces power dissipation so the SO-8 can be used without a heatsink in PLC and IO-link applications.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour STS5DNF60L — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | STS5NF60L | STS4DNF60L | VBSEMI VBA3638 | IRF7319 |
|---|---|---|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Vbsemi | Infineon |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| V_DSS (Drain-to-Source Voltage) | 60 V | 60 V - identical | 40 V (-33%) | 60 V (per vendor claim) | 30 V (lower) |
| Continuous Drain Current | 5 A per channel | 5 A single channel | 5 A per channel | Per vendor: higher than 5 A | Lower current class - verify |
| Technology | STripFET II trench N-channel | STripFET II trench N-channel | STripFET II trench N-channel | Trench N-channel | Trench N-channel (vendor-specific) |
| Channel Configuration | Dual N-channel (2xN) | Single N-channel | Dual N-channel | Dual N-channel | Dual N-channel |
| Automotive Grade | Automotive-grade | Automotive-grade | Automotive-grade | Verify with vendor | Verify with vendor |
| Price Tier @ qty 1000 | ~$0.62 | Similar ST pricing | Similar ST pricing | Lower per vendor claim | Higher per typical Infineon pricing |
Principaux différenciateurs
- True dual-channel vs single-channel in same SO-8 area (vs STS5NF60L)
- Higher voltage headroom than 40 V cousin (vs STS4DNF60L)
- Lower gate charge driver loss vs older STripFET generations (vs IRF7319)
Notes de conception
Estimated: with both channels dissipating worst-case 1 W each (worst hot-spot), the SO-8 junction-to-ambient thermal resistance requires at least 1 square inch of exposed copper on each layer. For higher dissipation, use thermal vias under the die-attach pad to spread heat to inner copper planes. Verify junction temperature at 100 °C ambient under load rather than 25 °C to capture real operating point.
Place a 10 µF X7R ceramic bypass capacitor within 3 mm of each drain pin for hard-switched half-bridge loops. For high-frequency synchronous-buck stages, shorten the high-dV/dt loop to less than 5 mm and add a small RC snubber (1-4.7 Ω with 1-10 nF) across each drain-source to suppress ringing. The SO-8 lands should match IPC-7351 SOIC-8 land-pattern conventions; do NOT use the wider SOIC-14 pattern accidentally.
Do NOT drive the STS5DNF60L directly from a 3.3 V microcontroller GPIO at cold temperatures - the low threshold may not guarantee full enhancement at -40 °C. Use a gate-driver IC (TC4427, SI8273AB-IS, or similar) that can deliver 4.5 V to 10 V gate drive and adequate peak gate current. Also, ensure that the dual-drain pins (4, 5, 7) are all connected to the drain pad copper for thermal symmetry - leaving one disconnected will overheat that die first.
Keep gate-drive trace lengths below 10 mm and use a gate resistor between 4.7 Ω and 22 Ω to balance EMI and switching loss. In half-bridge layouts, place the STS5DNF60L and its high-side companion asymmetrically to keep the high-side bootstrap diode path short. Avoid running sensitive analog traces under the drain-source switching node; shield them with a grounded copper pour.
Informations de conformité
STMicroelectronics STS5DNF60L is automotive-grade qualified per the ST datasheet headline and complies with RoHS and REACH. Halogen-free status should be confirmed against the latest ST material declaration.
