W25M02GWZEIG-TR - 2G-bit Serial NAND Flash, 1.8V, SPI | Winbond
Référence : W25M02GWZEIG-TR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.18 | $218,00 |
| 500 | $1.92 | $960,00 |
| 1 000 | $1.65 | $1 650,00 |
| 3 000 | $1.42 | $4 260,00 |
W25M02GWZEIG-TR Présentation
A Serial NAND flash memory is a non-volatile storage IC that uses the SPI bus instead of a parallel interface, replacing legacy parallel NAND with a much smaller pin count while preserving page-based erase and program operations. Within the broader memory hierarchy, NAND flash sits below DRAM and NOR flash in random-access latency but offers far higher density per mm² and a much lower cost-per-bit, making it ideal for data logging, firmware shadowing, and multimedia buffering in embedded systems. The SpiFlash family from Winbond specifically targets cost-sensitive designs that need >128Mb of code or data storage.
Key features include 2G-bit (256MB) density, 104 MHz maximum SPI clock, dual/quad SPI modes, page size of 2048 bytes + 64B spare area, block size of 128KB, and 100K program/erase cycles per block with 10-year data retention. The 8-WSON-8 8x6 mm package provides a compact footprint suitable for space-constrained PCB designs.
The W25M02GW utilizes Winbond's proven 1G-bit SLC NAND die in a stacked-die MCP configuration. Internal die selection is automatic through a die-select command, and the host MCU sees a contiguous logical address space through extended addressing. ECC handling and bad-block management are typically implemented in the host controller or boot ROM for reliability.
Typical applications include IoT edge devices, wearable electronics, automotive infotainment, point-of-sale terminals, industrial sensor data loggers, and 4G/LTE module firmware storage. The 1.8V operation makes it ideal for direct connection to low-power SoCs and PMICs without level shifters.
When designing with this device, ensure the host controller implements software ECC (the W25M02GW is raw NAND without internal ECC engine) and reserves adequate RAM for the 2KB page buffer. Quad SPI mode requires all four data lines routed with length matching on the PCB for reliable high-speed reads.
Alternatives de remplacement direct pour W25M02GWZEIG-TR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec W25M02GWZEIG-TR (même facteur de forme et même empreinte) — différant par Block Size, Density, MSL Level, Memory Type, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
W25M02GWZEIG
✅ Remplacement direct✓ En stock
$4.22 / unité
Voir la fiche technique →W25M02GVZEIG
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W25M02GWZEIG-ND
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MX25L25635FZNI-10G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
GD5F2GQ4UBYIG
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MX30LF2G18AC-XKI
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
W25M02GWZEIG-TR Valeurs maximales et caractéristiques électriques
| Type de mémoire | Non-Volatile NAND Flash (SLC) |
| Density | 2 Gbit (256 MB) - 2 x 1 Gbit die stacked |
| Memory Interface | SPI - Single, Dual, Quad I/O |
| Supply Voltage (VCC) | 1.7 V to 1.95 V (1.8 V typ.) |
| Maximum SPI Clock | 104 MHz |
| Access Time | 8 ns |
| Page Size | 2048 bytes + 64 bytes spare area |
| Block Size | 128 KB (64 pages) |
| Program/Erase Endurance | 100,000 cycles per block |
| Data Retention | 10 years typical |
| Boîtier | 8-WSON (ZE) 8x6 mm |
| Type de montage | Surface Mount |
| Température de fonctionnement | -40C to +85C (Industrial) |
| Niveau MSL | 3 (168 hours) |
| Packaging | Tape & Reel (TR) |
| Statut RoHS | Compliant |
Configuration des broches de W25M02GWZEIG-TR
| Broche 1 | CS# — Chip Select (active low) |
| Broche 2 | DO/SO — Serial Data Out / MISO |
| Broche 3 | WP# — Write Protect (active low) |
| Broche 4 | GND — Ground |
| Broche 5 | SI/IO0 — Serial Data In / IO0 in Quad mode |
| Broche 6 | CLK — SPI Clock |
| Broche 7 | HOLD#/RESET# — Hold or Reset (active low, configurable) |
| Broche 8 | VCC — Power Supply (1.7V to 1.95V) |
Applications typiques
W25M02GWZEIG-TR convient pour 6 applications: IoT Edge Device Firmware Storage, Automotive Infotainment Data Storage, Industrial Sensor Data Logger, Wearable Health Monitor Firmware, 4G/LTE Module Firmware Storage, Point-of-Sale Terminal Transaction Log.
IoT Edge Device Firmware Storage
The W25M02GWZEIG-TR provides 256 MB of non-volatile storage for IoT edge devices, with its 104 MHz quad SPI interface enabling fast boot times of <500ms for typical 4MB firmware images. The 1.8V operation matches directly with low-power SoC rails from PMICs like the TI TPS62840, eliminating level shifters. Its 100K P/E cycle endurance supports years of OTA update cycles in industrial IoT sensor nodes, while the compact 8-WSON 8x6 mm footprint fits easily into wearable and smart-home form factors. Compared to SD cards, the W25M02GW offers higher reliability for embedded use.
Recommandé
Automotive Infotainment Data Storage
The W25M02GWZEIG-TR serves as mass storage for automotive infotainment systems storing map data, voice prompts, and media files. Its industrial -40C to +85C temperature range meets automotive cabin requirements, while SLC NAND technology ensures data integrity across temperature swings. The 128 KB block erase size and 2 KB page size enable efficient map tile updates. Quad SPI mode at 104 MHz delivers sustained read throughput sufficient for streaming navigation voice prompts without buffer underruns.
Recommandé
Industrial Sensor Data Logger
The W25M02GWZEIG-TR is ideal for industrial sensor data loggers that must capture vibration, temperature, or pressure data over extended periods. With 100K P/E cycle endurance and 10-year retention, it handles continuous 1Hz logging for over 2 years without block wear-out concerns. The 2G-bit (256 MB) capacity stores approximately 30 days of 16-channel 1kHz vibration data at 16-bit resolution. Its 1.8V operation enables battery-powered remote sensor deployments with minimal quiescent current draw.
Recommandé
Wearable Health Monitor Firmware
The W25M02GWZEIG-TR provides compact, low-power firmware storage for wearable health monitors such as continuous glucose monitors, smartwatches, and fitness bands. Its 8-WSON 8x6 mm footprint fits into <30mm² PCB areas, and the 1.8V operation matches coin-cell boost converter rails. Quad SPI 104 MHz enables fast firmware verification at boot, critical for medical devices requiring <2 second startup. SLC endurance supports daily OTA firmware updates over a 5-year device lifetime.
Recommandé
4G/LTE Module Firmware Storage
The W25M02GWZEIG-TR stores firmware and radio configuration data for 4G/LTE IoT modules such as Quectel and Telit modules. The 256 MB capacity accommodates baseband firmware, GNSS assistance data, and customer application code. SPI interface compatibility with module SoCs enables direct connection without bridge ICs. Industrial temperature rating supports outdoor deployments including asset trackers and smart meters operating from -40C to +85C.
Recommandé
Point-of-Sale Terminal Transaction Log
The W25M02GWZEIG-TR provides reliable transaction log storage in point-of-sale terminals where each transaction must be recorded for audit compliance. The 100K P/E endurance ensures years of operation writing 100+ transactions per day, while 10-year data retention meets financial record-keeping requirements. Quad SPI enables fast firmware updates during terminal commissioning. The 1.8V operation simplifies power tree design in space-constrained POS form factors.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour W25M02GWZEIG-TR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | W25M02GWZEIG | W25M02GVZEIG | GD5F2GQ4UBYIG | MX25L25635FZNI-10G | MX30LF2G18AC-XKI |
|---|---|---|---|---|---|---|
| Brand | Winbond | Winbond | Winbond | GigaDevice | Macronix | Macronix |
| Package | 8-WSON (ZE) 8x6 mm | 8-WSON (ZE) 8x6 mm - same | 8-WSON (ZE) 8x6 mm - same | 8-WSON 8x6 mm - same | 8-WSON 8x6 mm - same | 8-WSON 8x6 mm - same |
| Memory Type | SLC NAND | SLC NAND | MLC NAND | SLC NAND | NOR Flash | SLC NAND (parallel) |
| Density | 2 Gbit (256 MB) | 2 Gbit | 2 Gbit | 2 Gbit | 256 Mbit | 2 Gbit |
| Supply Voltage | 1.7V to 1.95V | 1.7V to 1.95V | 2.7V to 3.6V | 1.8V typ. | 2.7V to 3.6V | 1.7V to 1.95V |
| Max SPI Clock | 104 MHz | 104 MHz | 104 MHz | 104 MHz | 104 MHz (NOR) | N/A (parallel) |
| P/E Endurance | 100,000 cycles | 100,000 cycles | 10,000 cycles | 100,000 cycles | 100,000 cycles (NOR) | 100,000 cycles |
| Interface | SPI (Single/Dual/Quad) | SPI (Single/Dual/Quad) | SPI (Single/Dual/Quad) | SPI (Single/Dual/Quad) | SPI (Single/Dual/Quad) | Parallel 8/16-bit |
| Unit Price (qty 1000) | $1.65 | $1.65 | $1.45 | $1.55 | $1.85 | $1.95 |
Principaux différenciateurs
- SLC NAND with 100K P/E endurance (vs W25M02GVZEIG)
- Genuine 2G-bit density with stacked-die MCP (vs MX25L25635FZNI-10G)
- Quad SPI 104 MHz with continuous read (vs MX30LF2G18AC-XKI)
- 1.8V native operation (vs GD5F2GQ4UBYIG)
Notes de conception
Route SPI traces (CLK, SI/IO0, SO/IO1, WP#, HOLD#, CS#) with controlled impedance (50 ohm) and length-matched to within 50 mils for reliable quad SPI operation at 104 MHz. Place a 100 nF decoupling capacitor within 2 mm of the VCC pin, plus a 1 uF bulk capacitor nearby. The exposed pad (if present on this package variant) must be soldered to the PCB ground plane for thermal dissipation and mechanical reliability.
The W25M02GW is raw NAND without an internal ECC engine - the host controller must implement Hamming or BCH error correction to ensure data integrity over the device's lifetime. Additionally, factory-marked bad blocks must be skipped during initial bad-block table construction in firmware. Failing to do so will result in read errors and data corruption.
Active read current is approximately 25 mA at 104 MHz, while standby current drops to <15 uA with CS# deasserted. For battery-powered designs, ensure CS# is held high during idle periods to minimize quiescent draw. Program and erase operations draw up to 30 mA peak - verify the PMIC can source this transient without voltage droop.
Informations de conformité
RoHS and REACH compliant per Winbond product declaration. Industrial temperature grade -40C to +85C, but not AEC-Q100 qualified for automotive safety-critical applications. For AEC-Q100 qualified automotive flash, contact Winbond for W25M02GW automotive-grade variants.
