WT:A - Micron 48Gb LPDDR4 SDRAM Mobile Memory | Micron
Référence : WT:A ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $16.2 | $162,00 |
| 100 | $13.95 | $1 395,00 |
| 500 | $11.4 | $5 700,00 |
| 1 000 | $9.85 | $9 850,00 |
WT:A Présentation
What is an LPDDR4 SDRAM? LPDDR4 (Low-Power Double Data Rate 4) is a JEDEC-standardized volatile memory category optimized for mobile and power-constrained applications. Compared with LPDDR3 and DDR3/DDR4, LPDDR4 uses a low-swing I/O interface (V<sub>DDQ</sub> typically 1.1 V), 2n-prefetch architecture, and deep power-down modes, positioning it within the broader mobile memory hierarchy: LPDDR4 -> SDRAM -> volatile memory -> memory IC -> semiconductor. LPDDR4 is the memory type used in virtually every high-end smartphone application processor, and is increasingly adopted in automotive infotainment, edge AI, and ultra-thin notebooks.
Key features of this 48 Gbit MT53E1536M32D4DT-046 WT:A device include a 1536M x 32-bit logical organization, 2.133 GHz data rate per the -046 speed-bin suffix, and operation from a low-voltage core rail to maximize battery life. The 200-ball TFBGA package is thin-profile and thermally efficient, suiting space-limited mobile platforms. The device supports the standard LPDDR4 command set including multi-channel operation, low-power states (IDD2N, IDD3P, IDD6), and on-die temperature sensing.
The architecture follows Micron's 1y-nm-class mobile DRAM process, enabling a high-density 48 Gbit monolithic die. Combined with the -046 speed grade, this delivers the throughput needed for multi-camera image pipelines, 4K video encode/decode buffers, and large neural network inference workloads running on the application processor. The wide 32-bit datapath keeps channel-count low, simplifying PCB routing on highly integrated SoCs.
Typical applications include flagship smartphone application processors, ultra-thin notebook main memory, automotive infotainment platforms, edge AI inference accelerators, AR/VR headset compute modules, and embedded single-board computer platforms. The wide temperature support and small form factor make it attractive in any design that demands high memory density with low standby power.
When designing with the MT53E1536M32D4DT-046 WT:A, ensure the host SoC's LPDDR4 PHY matches the 2.133 GHz speed bin to avoid down-training. Decoupling and PCB stack-up should follow the Micron LPDDR4 design guide, with controlled-impedance routing for the CA and DQ byte lanes and matched lengths within each byte group.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a one-line distributor listing.
Alternatives de remplacement direct pour WT:A — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec WT:A (même facteur de forme et même empreinte) — différant par Memory Type, Organization, Package, Supply Voltage VDD2, Supply Voltage VDDQ.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT53E2G32D4DE-046 WT:C
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53E1G32D2FW-046 WT:B
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$98.4375 / unité
Voir la fiche technique →MT53E2G32D4DT-046 WT:A
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MT53E768M32D4DT-046 WT:A
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MT53E1536M32D4DT-053 WT:A
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
WT:A Valeurs maximales et caractéristiques électriques
| Type de mémoire | Mobile LPDDR4 SDRAM |
| Density | 48 Gbit (6 GB) |
| Organisation de la mémoire | 1536M x 32 |
| Maximum Data Rate | 2.133 GHz |
| Speed Bin Suffix | -046 (2133 MHz) |
| Supply Voltage VDD1 | 1.8 V (typ, JEDEC LPDDR4) |
| Supply Voltage VDD2 | 1.1 V (typ, JEDEC LPDDR4) |
| Supply Voltage VDDQ | 1.1 V (typ, JEDEC LPDDR4) |
| Boîtier | 200-ball TFBGA |
| Type de montage | Surface Mount |
| Interface | LPDDR4 command/address + 32-bit DQ |
| JEDEC Standard | JESD209-4 (LPDDR4) |
| Statut RoHS | Compliant |
| Refresh | Auto-refresh and self-refresh per JEDEC |
Guide de configuration des broches du WT:A 200-ball tfbga
Configuration des broches du WT:A (boîtier 200-ball tfbga). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour WT:A.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
WT:A convient pour 6 applications: Flagship Smartphone Application Processor Main Memory, AR/VR Headset Compute Memory, Edge AI Inference Accelerator Memory, Automotive Infotainment Platform Memory, Ultra-Thin Notebook Main Memory, Embedded Single-Board Computer Platform.
Flagship Smartphone Application Processor Main Memory
The MT53E1536M32D4DT-046 WT:A's 48 Gbit density and 2.133 GHz LPDDR4 data rate make it a primary candidate for flagship smartphone application processors that require 6 GB of low-power main memory. Connected to the SoC's LPDDR4 PHY through a 32-bit datapath, it provides the bandwidth needed for multi-camera image pipelines, 4K video encode/decode buffers, and on-device AI inference activations, while the three-rail LPDDR4 supply (1.8 V core / 1.1 V array / 1.1 V I/O) keeps idle power low for always-on use cases. The 200-ball TFBGA package is thin-profile and thermally efficient, suiting the constrained z-height of modern handsets.
Recommandé
AR/VR Headset Compute Memory
In AR/VR headsets, the MT53E1536M32D4DT-046 WT:A delivers 6 GB of LPDDR4 capacity at 2.133 GHz to feed the GPU and vision co-processors that render stereoscopic frames and run SLAM/VIO algorithms. The LPDDR4 interface minimizes power dissipation per bit, which is critical for the 1-2 hour battery life target of standalone headsets, while the WT suffix's industrial-grade temperature support allows operation in thermally constrained enclosures. The 32-bit-wide channel reduces PHY complexity versus multi-channel designs, helping meet BOM cost targets in consumer XR hardware.
Recommandé
Edge AI Inference Accelerator Memory
For edge AI inference accelerators that run quantised large language models or vision transformers, the MT53E1536M32D4DT-046 WT:A provides 6 GB of working memory with the bandwidth to feed modern NPUs at full utilization. At 2.133 GHz per LPDDR4 lane, the device delivers the throughput needed for 4-8 token/second LLM inference at the edge, while the WT package's thermal profile supports fanless enclosures. The 32-bit datapath simplifies the host SoC's memory controller design versus higher-channel-count configurations, and the standard LPDDR4 power-down modes help meet Energy Star and EU eco-design standby targets.
Recommandé
Automotive Infotainment Platform Memory
The MT53E1536M32D4DT-046 WT:A's 48 Gbit density and LPDDR4 interface suit the multi-display cockpit designs of modern vehicles, where the infotainment SoC needs 4-8 GB of low-power RAM to drive the central stack display, instrument cluster, and head-up display simultaneously. The wide -40 C to +85 C (WT-grade) operating range and Micron's automotive-grade qualification flow support under-dash thermal environments. The 2.133 GHz data rate enables smooth 60 fps HMI rendering and rapid voice-assistant response times without dropping audio frames.
Recommandé
Ultra-Thin Notebook Main Memory
In ultra-thin notebooks and 2-in-1 convertibles, the MT53E1536M32D4DT-046 WT:A's high density in a thin TFBGA package enables soldered-down LPDDR4 configurations that save PCB area versus SO-DIMM sockets. The 6 GB capacity is sufficient for mainstream use cases (web, productivity, light photo editing), and the 2.133 GHz speed bin accelerates integrated GPU frame buffers for smooth 4K external display output. The low-swing 1.1 V I/O rail directly contributes to the device's long battery-life class, a key purchasing criterion in the ultra-thin category.
Recommandé
Embedded Single-Board Computer Platform
For embedded single-board computers (SBCs) targeting robotics, industrial HMI, and edge gateways, the MT53E1536M32D4DT-046 WT:A provides 6 GB of LPDDR4 system memory in a surface-mount package suited to compact carrier boards. The 32-bit-wide interface simplifies the memory controller routing on 4-layer PCBs, and the wide operating temperature range supports deployment in industrial enclosures. With 2.133 GHz of bandwidth, the SBC can run Linux with a desktop-class UI and on-device ML workloads for predictive maintenance and anomaly detection at the network edge.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour WT:A — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT53E2G32D4DE-046 WT:C | MT53E1G32D2FW-046 WT:B | MT53E2G32D4DT-046 WT:A | MT53E768M32D4DT-046 WT:A | MT53E1536M32D4DT-053 WT:A |
|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 200-ball TFBGA | 200-ball TFBGA - same | 200-ball TFBGA - same | 200-ball TFBGA - same | 200-ball TFBGA - same | 200-ball TFBGA - same |
| Density | 48 Gbit (6 GB) | 16 Gbit (2 GB) | 8 Gbit (1 GB) | 16 Gbit (2 GB) | 24 Gbit (3 GB) | 48 Gbit (6 GB) |
| Organization | 1536M x 32 | 512M x 32 (2 GB x16 chan) | 256M x 32 (1 GB x16 chan) | 512M x 32 | 768M x 32 | 1536M x 32 |
| Speed Bin | -046 (2133 MHz) | -046 (2133 MHz) - same | -046 (2133 MHz) - same | -046 (2133 MHz) - same | -046 (2133 MHz) - same | -053 (1866 MHz) |
| Memory Type | Mobile LPDDR4 SDRAM | Mobile LPDDR4 SDRAM - same | Mobile LPDDR4 SDRAM - same | Mobile LPDDR4 SDRAM - same | Mobile LPDDR4 SDRAM - same | Mobile LPDDR4 SDRAM - same |
| VDDQ I/O Voltage | 1.1 V | 1.1 V - same | 1.1 V - same | 1.1 V - same | 1.1 V - same | 1.1 V - same |
| JEDEC Standard | JESD209-4 (LPDDR4) | JESD209-4 - same | JESD209-4 - same | JESD209-4 - same | JESD209-4 - same | JESD209-4 - same |
Principaux différenciateurs
- Highest-density 32-bit LPDDR4 die in the MT53E family (vs MT53E2G32D4DE-046 WT:C)
- Faster speed bin than MT53E1536M32D4DT-053 WT:A (vs MT53E1536M32D4DT-053 WT:A)
- Single-die 6 GB configuration (vs MT53E1G32D2FW-046 WT:B)
Notes de conception
Follow the Micron LPDDR4 design guide: use a 4-layer PCB minimum with continuous ground and VDD2/VDDQ planes under the 200-ball array, matched-impedance routing (target 50 ohm single-ended, 90 ohm differential for DQS) on the CA and DQ byte lanes, and matched trace lengths within each byte group. The TFBGA's 0.8 mm pitch demands NSMD pads with a solder-mask-defined or non-solder-mask-defined land pattern per the Micron mechanical drawing. Decoupling: place 1uF X7R 0402 caps on each VDD1/VDD2/VDDQ ball pair, and a 10uF bulk cap near the package. Estimated: with 4 layers and proper stack-up, signal-integrity simulation should yield <10% eye-height reduction at the 2.133 GHz data rate.
The LPDDR4 three-rail supply (VDD1 1.8 V, VDD2 1.1 V, VDDQ 1.1 V) must be brought up in the sequence specified by the Micron datasheet to avoid latch-up. A typical sequence is VDD2 -> VDD1 -> VDDQ -> CA training. Use a low-dropout (LDO) regulator for VDDQ and a high-efficiency buck for VDD2; estimated active power is approximately 0.8-1.2 W for a 6 GB die at full 2.133 GHz utilization, so a 1.5 W-rated buck is appropriate. Add a power-good signal to the host SoC so the LPDDR4 PHY starts CA initialization only after VDDQ is stable.
Although the LPDDR4 interface is low-power, the MT53E1536M32D4DT-046 WT:A can dissipate 1-1.5 W during sustained read/write workloads, especially on edge-AI platforms that constantly feed an NPU. Estimated: with theta-JA of approximately 30 C/W on a 4-layer PCB with the recommended thermal via pattern, junction temperature rises 30-45 C above ambient. To stay within the -40 C to +85 C operating range (WT suffix), ensure the system ambient does not exceed 50-55 C under worst-case load. Use thermal vias under the die flag area of the TFBGA to spread heat into the inner ground plane.
LPDDR4 at 2.133 GHz is highly sensitive to crosstalk between byte lanes. Keep at least 2x trace spacing between DQ/DQS lanes of different byte groups, and route each byte group over a continuous reference plane. Per the Micron LPDDR4 design guide, write leveling and CA training are mandatory at first power-up - the host SoC's PHY must support the JEDEC-defined training sequences. Estimated: a poorly-routed byte lane can show >30% eye-height reduction at 2.133 GHz; an SI-aware layout with proper stack-up typically keeps the reduction under 15%.
Informations de conformité
RoHS compliant per Micron product family data. JEDEC JESD209-4 (LPDDR4) compliance. Not AEC-Q100 qualified - for automotive applications consult Micron automotive-grade (WT:A is industrial/extended temp; AEC-Q100 parts use distinct automotive ordering codes). Halogen-free status not stated in available data.
