WT:A - Micron 48Gb LPDDR4 SDRAM Mobile Memory | Micron
部品番号: WT:A ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.2 | $162.00 |
| 100 | $13.95 | $1,395.00 |
| 500 | $11.4 | $5,700.00 |
| 1,000 | $9.85 | $9,850.00 |
WT:A 概要
What is an LPDDR4 SDRAM? LPDDR4 (Low-Power Double Data Rate 4) is a JEDEC-standardized volatile memory category optimized for mobile and power-constrained applications. Compared with LPDDR3 and DDR3/DDR4, LPDDR4 uses a low-swing I/O interface (V<sub>DDQ</sub> typically 1.1 V), 2n-prefetch architecture, and deep power-down modes, positioning it within the broader mobile memory hierarchy: LPDDR4 -> SDRAM -> volatile memory -> memory IC -> semiconductor. LPDDR4 is the memory type used in virtually every high-end smartphone application processor, and is increasingly adopted in automotive infotainment, edge AI, and ultra-thin notebooks.
Key features of this 48 Gbit MT53E1536M32D4DT-046 WT:A device include a 1536M x 32-bit logical organization, 2.133 GHz data rate per the -046 speed-bin suffix, and operation from a low-voltage core rail to maximize battery life. The 200-ball TFBGA package is thin-profile and thermally efficient, suiting space-limited mobile platforms. The device supports the standard LPDDR4 command set including multi-channel operation, low-power states (IDD2N, IDD3P, IDD6), and on-die temperature sensing.
The architecture follows Micron's 1y-nm-class mobile DRAM process, enabling a high-density 48 Gbit monolithic die. Combined with the -046 speed grade, this delivers the throughput needed for multi-camera image pipelines, 4K video encode/decode buffers, and large neural network inference workloads running on the application processor. The wide 32-bit datapath keeps channel-count low, simplifying PCB routing on highly integrated SoCs.
Typical applications include flagship smartphone application processors, ultra-thin notebook main memory, automotive infotainment platforms, edge AI inference accelerators, AR/VR headset compute modules, and embedded single-board computer platforms. The wide temperature support and small form factor make it attractive in any design that demands high memory density with low standby power.
When designing with the MT53E1536M32D4DT-046 WT:A, ensure the host SoC's LPDDR4 PHY matches the 2.133 GHz speed bin to avoid down-training. Decoupling and PCB stack-up should follow the Micron LPDDR4 design guide, with controlled-impedance routing for the CA and DQ byte lanes and matched lengths within each byte group.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a one-line distributor listing.
ドロップイン代替品: WT:A — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: WT:A （同一形状・フットプリント） — 相違点: Memory Type, Organization, Package, Supply Voltage VDD2, Supply Voltage VDDQ.
クイック比較ツール — 並列比較する代替部品を選択:
MT53E2G32D4DE-046 WT:C
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT53E1G32D2FW-046 WT:B
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$98.4375 / 個
データシートを見る →MT53E2G32D4DT-046 WT:A
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MT53E768M32D4DT-046 WT:A
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
MT53E1536M32D4DT-053 WT:A
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
WT:A 最大定格＆電気的特性
| メモリタイプ | Mobile LPDDR4 SDRAM |
| Density | 48 Gbit (6 GB) |
| メモリ構成 | 1536M x 32 |
| Maximum Data Rate | 2.133 GHz |
| Speed Bin Suffix | -046 (2133 MHz) |
| Supply Voltage VDD1 | 1.8 V (typ, JEDEC LPDDR4) |
| Supply Voltage VDD2 | 1.1 V (typ, JEDEC LPDDR4) |
| Supply Voltage VDDQ | 1.1 V (typ, JEDEC LPDDR4) |
| パッケージ | 200-ball TFBGA |
| 実装タイプ | Surface Mount |
| インターフェース | LPDDR4 command/address + 32-bit DQ |
| JEDEC Standard | JESD209-4 (LPDDR4) |
| RoHS ステータス | Compliant |
| Refresh | Auto-refresh and self-refresh per JEDEC |
WT:A 200-ball tfbga ピン配置ガイド
WT:A (200-ball tfbga パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: WT:A.
詳細は データシート をご参照ください。
主な用途
WT:A の用途: 6 件s: Flagship Smartphone Application Processor Main Memory, AR/VR Headset Compute Memory, Edge AI Inference Accelerator Memory, Automotive Infotainment Platform Memory, Ultra-Thin Notebook Main Memory, Embedded Single-Board Computer Platform.
Flagship Smartphone Application Processor Main Memory
The MT53E1536M32D4DT-046 WT:A's 48 Gbit density and 2.133 GHz LPDDR4 data rate make it a primary candidate for flagship smartphone application processors that require 6 GB of low-power main memory. Connected to the SoC's LPDDR4 PHY through a 32-bit datapath, it provides the bandwidth needed for multi-camera image pipelines, 4K video encode/decode buffers, and on-device AI inference activations, while the three-rail LPDDR4 supply (1.8 V core / 1.1 V array / 1.1 V I/O) keeps idle power low for always-on use cases. The 200-ball TFBGA package is thin-profile and thermally efficient, suiting the constrained z-height of modern handsets.
おすすめ
AR/VR Headset Compute Memory
In AR/VR headsets, the MT53E1536M32D4DT-046 WT:A delivers 6 GB of LPDDR4 capacity at 2.133 GHz to feed the GPU and vision co-processors that render stereoscopic frames and run SLAM/VIO algorithms. The LPDDR4 interface minimizes power dissipation per bit, which is critical for the 1-2 hour battery life target of standalone headsets, while the WT suffix's industrial-grade temperature support allows operation in thermally constrained enclosures. The 32-bit-wide channel reduces PHY complexity versus multi-channel designs, helping meet BOM cost targets in consumer XR hardware.
おすすめ
Edge AI Inference Accelerator Memory
For edge AI inference accelerators that run quantised large language models or vision transformers, the MT53E1536M32D4DT-046 WT:A provides 6 GB of working memory with the bandwidth to feed modern NPUs at full utilization. At 2.133 GHz per LPDDR4 lane, the device delivers the throughput needed for 4-8 token/second LLM inference at the edge, while the WT package's thermal profile supports fanless enclosures. The 32-bit datapath simplifies the host SoC's memory controller design versus higher-channel-count configurations, and the standard LPDDR4 power-down modes help meet Energy Star and EU eco-design standby targets.
おすすめ
Automotive Infotainment Platform Memory
The MT53E1536M32D4DT-046 WT:A's 48 Gbit density and LPDDR4 interface suit the multi-display cockpit designs of modern vehicles, where the infotainment SoC needs 4-8 GB of low-power RAM to drive the central stack display, instrument cluster, and head-up display simultaneously. The wide -40 C to +85 C (WT-grade) operating range and Micron's automotive-grade qualification flow support under-dash thermal environments. The 2.133 GHz data rate enables smooth 60 fps HMI rendering and rapid voice-assistant response times without dropping audio frames.
おすすめ
Ultra-Thin Notebook Main Memory
In ultra-thin notebooks and 2-in-1 convertibles, the MT53E1536M32D4DT-046 WT:A's high density in a thin TFBGA package enables soldered-down LPDDR4 configurations that save PCB area versus SO-DIMM sockets. The 6 GB capacity is sufficient for mainstream use cases (web, productivity, light photo editing), and the 2.133 GHz speed bin accelerates integrated GPU frame buffers for smooth 4K external display output. The low-swing 1.1 V I/O rail directly contributes to the device's long battery-life class, a key purchasing criterion in the ultra-thin category.
おすすめ
Embedded Single-Board Computer Platform
For embedded single-board computers (SBCs) targeting robotics, industrial HMI, and edge gateways, the MT53E1536M32D4DT-046 WT:A provides 6 GB of LPDDR4 system memory in a surface-mount package suited to compact carrier boards. The 32-bit-wide interface simplifies the memory controller routing on 4-layer PCBs, and the wide operating temperature range supports deployment in industrial enclosures. With 2.133 GHz of bandwidth, the SBC can run Linux with a desktop-class UI and on-device ML workloads for predictive maintenance and anomaly detection at the network edge.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: WT:A — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT53E2G32D4DE-046 WT:C | MT53E1G32D2FW-046 WT:B | MT53E2G32D4DT-046 WT:A | MT53E768M32D4DT-046 WT:A | MT53E1536M32D4DT-053 WT:A |
|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 200-ball TFBGA | 200-ball TFBGA - same | 200-ball TFBGA - same | 200-ball TFBGA - same | 200-ball TFBGA - same | 200-ball TFBGA - same |
| Density | 48 Gbit (6 GB) | 16 Gbit (2 GB) | 8 Gbit (1 GB) | 16 Gbit (2 GB) | 24 Gbit (3 GB) | 48 Gbit (6 GB) |
| Organization | 1536M x 32 | 512M x 32 (2 GB x16 chan) | 256M x 32 (1 GB x16 chan) | 512M x 32 | 768M x 32 | 1536M x 32 |
| Speed Bin | -046 (2133 MHz) | -046 (2133 MHz) - same | -046 (2133 MHz) - same | -046 (2133 MHz) - same | -046 (2133 MHz) - same | -053 (1866 MHz) |
| Memory Type | Mobile LPDDR4 SDRAM | Mobile LPDDR4 SDRAM - same | Mobile LPDDR4 SDRAM - same | Mobile LPDDR4 SDRAM - same | Mobile LPDDR4 SDRAM - same | Mobile LPDDR4 SDRAM - same |
| VDDQ I/O Voltage | 1.1 V | 1.1 V - same | 1.1 V - same | 1.1 V - same | 1.1 V - same | 1.1 V - same |
| JEDEC Standard | JESD209-4 (LPDDR4) | JESD209-4 - same | JESD209-4 - same | JESD209-4 - same | JESD209-4 - same | JESD209-4 - same |
主な差別化要因
- Highest-density 32-bit LPDDR4 die in the MT53E family （vs MT53E2G32D4DE-046 WT:C)
- Faster speed bin than MT53E1536M32D4DT-053 WT:A （vs MT53E1536M32D4DT-053 WT:A)
- Single-die 6 GB configuration （vs MT53E1G32D2FW-046 WT:B)
設計ノート
Follow the Micron LPDDR4 design guide: use a 4-layer PCB minimum with continuous ground and VDD2/VDDQ planes under the 200-ball array, matched-impedance routing (target 50 ohm single-ended, 90 ohm differential for DQS) on the CA and DQ byte lanes, and matched trace lengths within each byte group. The TFBGA's 0.8 mm pitch demands NSMD pads with a solder-mask-defined or non-solder-mask-defined land pattern per the Micron mechanical drawing. Decoupling: place 1uF X7R 0402 caps on each VDD1/VDD2/VDDQ ball pair, and a 10uF bulk cap near the package. Estimated: with 4 layers and proper stack-up, signal-integrity simulation should yield <10% eye-height reduction at the 2.133 GHz data rate.
The LPDDR4 three-rail supply (VDD1 1.8 V, VDD2 1.1 V, VDDQ 1.1 V) must be brought up in the sequence specified by the Micron datasheet to avoid latch-up. A typical sequence is VDD2 -> VDD1 -> VDDQ -> CA training. Use a low-dropout (LDO) regulator for VDDQ and a high-efficiency buck for VDD2; estimated active power is approximately 0.8-1.2 W for a 6 GB die at full 2.133 GHz utilization, so a 1.5 W-rated buck is appropriate. Add a power-good signal to the host SoC so the LPDDR4 PHY starts CA initialization only after VDDQ is stable.
Although the LPDDR4 interface is low-power, the MT53E1536M32D4DT-046 WT:A can dissipate 1-1.5 W during sustained read/write workloads, especially on edge-AI platforms that constantly feed an NPU. Estimated: with theta-JA of approximately 30 C/W on a 4-layer PCB with the recommended thermal via pattern, junction temperature rises 30-45 C above ambient. To stay within the -40 C to +85 C operating range (WT suffix), ensure the system ambient does not exceed 50-55 C under worst-case load. Use thermal vias under the die flag area of the TFBGA to spread heat into the inner ground plane.
LPDDR4 at 2.133 GHz is highly sensitive to crosstalk between byte lanes. Keep at least 2x trace spacing between DQ/DQS lanes of different byte groups, and route each byte group over a continuous reference plane. Per the Micron LPDDR4 design guide, write leveling and CA training are mandatory at first power-up - the host SoC's PHY must support the JEDEC-defined training sequences. Estimated: a poorly-routed byte lane can show >30% eye-height reduction at 2.133 GHz; an SI-aware layout with proper stack-up typically keeps the reduction under 15%.
コンプライアンス情報
RoHS compliant per Micron product family data. JEDEC JESD209-4 (LPDDR4) compliance. Not AEC-Q100 qualified - for automotive applications consult Micron automotive-grade (WT:A is industrial/extended temp; AEC-Q100 parts use distinct automotive ordering codes). Halogen-free status not stated in available data.
