1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
MPN: 1EDI60H12AHXUMA1 ✓ פעיל1EDI60H12AHXUMA1 סקירה
A gate driver IC is a specialized power-management component that sits between a low-power controller (MCU, DSP, FPGA) and a power switch (IGBT, MOSFET, SiC, GaN). It translates low-current PWM logic signals into the high-current gate charge and discharge pulses needed to switch the power device quickly and efficiently. In the broader system hierarchy, gate drivers fall under Power Management > Power MOSFET & IGBT Drivers, which themselves are a subcategory of power management ICs. Galvanically isolated gate drivers add a critical barrier that allows the controller to float at any reference potential up to thousands of volts above ground - essential for high-side switching in half-bridge, full-bridge, and three-phase inverter topologies.
The 1EDI60H12AHXUMA1 features separate source and sink output pins (SEP output) for independent gate-charge and gate-discharge path optimization, allowing designers to add asymmetric gate resistors to fine-tune turn-on/turn-off dV/dt behavior. Built-in short-circuit clamping protects the driven IGBT during desaturation events, while the wide driver-side supply range supports both standard and negative-gate-bias drive schemes used to prevent parasitic turn-on in bridge configurations. The 8mm creepage/clearance of the PG-DSO-8-59 package satisfies reinforced insulation requirements for industrial voltage classes.
Architecturally, the device integrates an on-chip coreless transformer that achieves several kilovolts of reinforced isolation while consuming far less board area than traditional optocoupler-based solutions. On the input side, the driver accepts CMOS/TTL-compatible logic, and on the output side it can directly drive IGBT modules from 600V to 1200V classes, including EconoDUAL, Easy, and PrimePACK footprints with appropriate external gate resistors. Typical propagation delay is in the tens of nanoseconds, making it suitable for switch-mode power conversion up to several hundred kHz.
Typical applications include industrial motor drives (servo, VFD), solar inverters, uninterruptible power supplies (UPS), welding inverters, and induction heating. The combination of 1200V isolation rating and 10A peak drive current also suits the device to driving large SiC MOSFET modules where high dV/dt demands robust isolation. Design considerations include providing adequate local decoupling on both primary and secondary supply pins, sizing gate resistors for the chosen IGBT module, and ensuring the PCB layout respects the 8mm creepage specification by routing no copper under the package body between primary and secondary sides.
חלופות תחליף ישיר עבור 1EDI60H12AHXUMA1 — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם 1EDI60H12AHXUMA1 (אותו גורם צורה וטביעת רגל) — שונים ב Isolation Technology, Package, MSL Level, Operating Temperature, Configuration.
1EDI60I12AHXUMA1
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
1ED020I12B2XUMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←1ED3122MC12HXUMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←1ED3124MC12HXUMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←1ED020I12-F2XUMA2
✅ Drop-In ⚠️ מפרטים לא מאומתים📋 חלופה להתייחסות (לא בקטלוג)
1EDI2002ASXUMA1
✅ Drop-In ⚠️ מפרטים לא מאומתים📋 חלופה להתייחסות (לא בקטלוג)
1EDI60H12AHXUMA1 דירוגים מרביים ומאפיינים חשמליים
| Product Type | Single-channel high-side gate driver IC |
| Isolation Technology | Galvanic isolation via coreless transformer |
| Isolation Voltage Rating | 1200 V |
| Number of Channels | 1 |
| Peak Source Current (typ.) | 10.0 A |
| Peak Sink Current (typ.) | 9.4 A |
| תצורת מוצא | Separate source and sink (SEP) outputs |
| Input Compatibility | CMOS / TTL logic |
| Driven Device | IGBT (and MOSFET / SiC compatible) |
| מארז | PG-DSO-8-59 (DSO-8 with 8 mm creepage) |
| סוג הרכבה | Surface Mount |
| Creepage Distance | 8 mm |
| Short-Circuit Protection | Short-circuit clamping |
| רמת MSL | 2 (1 year floor life) |
| סטטוס RoHS | Compliant |
תצורת פינים של 1EDI60H12AHXUMA1
| פין 1 | VDD1 — Primary-side (logic) supply voltage |
| פין 2 | IN+ — Non-inverting PWM logic input (CMOS/TTL) |
| פין 3 | IN- — Inverting PWM logic input |
| פין 4 | GND1 — Primary-side ground (logic reference) |
| פין 5 | GND2 — Secondary-side ground (gate drive return) |
| פין 6 | OUT_S — Source (turn-on) gate drive output - SEP output |
| פין 7 | OUT_R — Sink (turn-off) gate drive output - SEP output |
| פין 8 | VDD2 — Secondary-side (gate drive) supply voltage |
יישומים טיפוסיים
1EDI60H12AHXUMA1 מתאים עבור 7 יישוםs: Industrial Motor Drive (VFD / Servo), Solar String Inverter, Uninterruptible Power Supply (UPS), Welding Inverter, Induction Heating Power Stage, Electric Vehicle (EV) Traction Inverter (SiC MOSFETs), Renewable Energy / Wind Turbine Converter.
Industrial Motor Drive (VFD / Servo)
The 1EDI60H12AHXUMA1 is well suited to industrial variable-frequency drives (VFDs) and servo inverters where IGBT modules in 600V-1200V classes must switch at high dV/dt from a high-side referenced to a floating DC bus. The 1200V reinforced galvanic isolation lets the MCU controller sit on a low-voltage ground while the driver output swings at the bus potential; 10 A source and 9.4 A sink capability charges and discharges the IGBT gate capacitances quickly enough to keep switching losses low at typical 4-16 kHz PWM frequencies. Separate source and sink output pins allow asymmetric gate resistors to slow turn-on dV/dt (reducing EMI) while keeping turn-off fast (reducing switching loss).
מומלץ
Solar String Inverter
In solar string inverters the 1EDI60H12AHXUMA1 drives the IGBTs (or SiC MOSFETs) of the DC-AC inverter stage running from a 600-1200 V DC bus. The coreless-transformer isolation eliminates the ground-loop and common-mode current issues that plague bootstrap or non-isolated drivers in floating-bus topologies, and the 10 A peak drive strength is sufficient for the gate charge of typical 100-300 A IGBT modules used in 10-50 kW residential and commercial string inverters. The 8 mm package creepage of the PG-DSO-8-59 satisfies the reinforced insulation creepage required by IEC 62109 for PV inverter power stages.
מומלץ
Uninterruptible Power Supply (UPS)
The 1EDI60H12AHXUMA1 serves as the high-side gate driver in on-line UPS inverter stages where the battery bus can be 400-800 VDC and the inverter output must produce clean 120/230 VAC under all load steps. Reinforced 1200V isolation lets the same low-voltage DSP/MCU control both low-side and high-side switches without ground loops, and 10 A peak drive current ensures the IGBTs switch fast enough to keep THD below 3 percent at full rated load. Built-in short-circuit clamping reacts in microseconds to shorted load conditions - critical for UPS reliability when downstream wiring faults occur.
מומלץ
Welding Inverter
Welding inverters demand gate drivers that can sustain harsh switching environments with high peak currents, repeated short-circuit transients, and wide temperature swings. The 1EDI60H12AHXUMA1's 10 A source / 9.4 A sink drive delivers the fast edge rates needed for the high-frequency transformer stage to keep the magnetic components small, while its built-in short-circuit clamping protects the IGBTs during the inevitable arc-short events inherent to welding. The 1200V reinforced isolation ensures reliable operation even when the welding arc creates fast common-mode transients on the high-voltage bus.
מומלץ
Induction Heating Power Stage
Induction-heating inverters operating at 20-100 kHz benefit from the 1EDI60H12AHXUMA1's combination of 1200V isolation and 10A drive strength. The coreless-transformer isolation survives the high common-mode dV/dt that resonance circuits generate, and the SEP source/sink outputs let designers tune turn-on and turn-off edges independently to balance EMI compliance against switching loss in the resonant tank. The driver's fast propagation delay also supports the precise timing needed for zero-voltage-switching (ZVS) topologies.
מומלץ
Electric Vehicle (EV) Traction Inverter (SiC MOSFETs)
In EV traction inverters running on 800 V architectures with SiC MOSFET power stages, the 1EDI60H12AHXUMA1 drives the high-side SiC switches that see the full battery bus voltage. The 1200V isolation comfortably handles the 800V system voltage plus the switching transients, and 10 A peak current is sufficient for most 1200V SiC MOSFET modules in the 200-600 A class. The coreless transformer technology does not suffer the common-mode dv/dt limitations of optocoupler-based drivers, which is critical when switching edges approach 50-100 kV/us.
מומלץ
Renewable Energy / Wind Turbine Converter
In wind turbine back-to-back converters (generator-side rectifier plus grid-side inverter), the 1EDI60H12AHXUMA1 drives the IGBTs of the generator-side rectifier where the bus floats at the generator's rectified output. Reinforced 1200V galvanic isolation across the driver allows direct control from a chassis-grounded DSP without any bootstrap supply or charge-pump complexity, and the 10 A drive current suits the medium-power IGBT modules commonly used in multi-MW turbines. Long-term supply continuity from Infineon makes the device appropriate for wind turbine designs with 20+ year service life requirements.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור 1EDI60H12AHXUMA1 — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | 1EDI60I12AHXUMA1 | 1ED020I12B2XUMA1 | 1ED3122MC12HXUMA1 | 1ED3124MC12HXUMA1 | 1ED020I12-F2XUMA2 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8-59 (DSO-8, 8mm creepage) | PG-DSO-8-59 - same | PG-DSO-8 - same family | PG-DSO-8 wide-body - same family | PG-DSO-8 wide-body - same family | PG-DSO-8 - same family |
| Isolation Voltage | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Peak Source Current (typ.) | 10.0 A | 10.0 A | ~2.0 A | ~6.0 A | ~6.0 A | ~2.0 A |
| Peak Sink Current (typ.) | 9.4 A | 9.4 A | ~2.0 A | ~6.0 A | ~6.0 A | ~2.0 A |
| Output Configuration | Separate source / sink (SEP) | SEP | SEP | SEP | SEP | SEP |
| Isolation Technology | Coreless transformer (CT) | Coreless transformer | Coreless transformer | Coreless transformer | Coreless transformer | Coreless transformer |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active | Active | Active |
מבדילים עיקריים
- Industry-leading 10A/9.4A drive strength in compact DSO-8 footprint (לעומת1ED020I12B2XUMA1)
- Reinforced 1200V isolation via coreless transformer (לעומת1ED020I12B2XUMA1)
- Separate source and sink (SEP) output pins (לעומת1ED3122MC12HXUMA1)
הערות תכנון
Place a 100 nF decoupling capacitor as close as possible to VDD1 (pin 1) and another 100 nF ceramic as close as possible to VDD2 (pin 8). Add a 1-10 uF bulk capacitor on each supply pin for high-peak-current transients. Route the primary-side GND1 (pin 4) and secondary-side GND2 (pin 5) as separate ground planes that meet only at the package body - never run logic traces under or across the isolation barrier, since this defeats the 8 mm creepage specification of the PG-DSO-8-59 package.
Do not place any copper (traces, vias, fills) under the package body between primary and secondary sides, even on internal layers. The PG-DSO-8-59's 8 mm creepage is measured externally along the package; internal copper under the package can reduce effective creepage and may cause insulation breakdown at high-voltage transients. Also, never connect OUT_S and OUT_R together externally - they must drive separate gate resistors for the SEP source/sink architecture to function as designed.
Estimated: at 10 A peak and a switching frequency of 16 kHz, the gate driver dissipates approximately 0.15 W from its own quiescent and switching losses; this does not include the gate-charge losses dissipated in the external gate resistors. Size the SEP turn-on and turn-off gate resistors for the specific IGBT module: a typical rule of thumb is Rg_on = 2x Rg_off to slow turn-on dV/dt by ~2x for EMI reduction while keeping turn-off fast for switching-loss minimization. Verify final resistor values against the IGBT datasheet's recommended Rg range and the application's EMI target.
מידע על תאימות
RoHS compliant per Infineon product page. Not AEC-Q100 qualified (industrial-grade part). Halogen-free status not explicitly confirmed in verified data.
