IQD005N04NM6ATMA1 - 40V 0.5mΩ N-Ch MOSFET PG-TSON-8-9 | Infineon
MPN: IQD005N04NM6ATMA1 ✓ פעילIQD005N04NM6ATMA1 סקירה
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching device in modern switched-mode power supplies (SMPS), motor drives, and load-management circuits. Within that hierarchy, an N-channel enhancement-mode power MOSFET uses positive gate drive to create a conducting channel between drain and source. OptiMOS 6 is Infineon's sixth-generation 40 V platform, optimized for lowest conduction and switching losses, and the IQD005N04NM6 sits at the very bottom of its RDS(on) curve, enabling the highest current density in its voltage class.
The defining feature is 0.5 mΩ RDS(on) at 10 V VGS, which directly translates to lower I²R losses, cooler operation, and higher efficiency in high-current applications such as 12 V and 24 V bus hot-swap, OR-ing, eFuse, and synchronous rectification. The PG-TSON-8-9 package combines a small 5x6 mm² footprint with an exposed source pad that doubles as the thermal interface, allowing the part to sink 333 W pulsed into a properly designed PCB land pattern and copper plane.
Typical applications include SMPS primary and secondary-side switches, high-current DC-DC converter synchronous rectifiers, hot-swap controllers, battery management protection FETs in 12 V/24 V Li-ion packs, motor-drive half-bridges, and USB-PD / e-mobility power-path switches. The 40 V rating gives generous margin above the 24 V industrial bus, while the ultra-low RDS(on) keeps thermal rise manageable in continuous conduction.
When designing with this part, focus PCB layout on minimizing source-inductance loop area - place gate drive return directly at the source pad, and use multiple thermal vias under the exposed pad to spread heat into inner copper layers. Compared with previous-generation OptiMOS 5 parts at the same RDS(on), the OptiMOS 6 die reduces output charge (Qoss) and gate charge (Qg), enabling higher switching frequencies and smaller magnetics in SMPS designs.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB-level design guidance that go beyond what is published in the standalone Infineon datasheet.
חלופות תחליף ישיר עבור IQD005N04NM6ATMA1 — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם IQD005N04NM6ATMA1 (אותו גורם צורה וטביעת רגל) — שונים ב Package, Technology, Operating Temperature Range, MSL Level, Product Family.
ISC011N04NM7VATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←ISC037N12NM6ATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSC019N04LSGATMA1
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
ISC151N08NM6ATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←IQE220N15NM5ATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSC019N08NS5ATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←IQD005N04NM6ATMA1 דירוגים מרביים ומאפיינים חשמליים
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 Power-Transistor |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Ta=25C | 58 A |
| Pulsed Drain Current (IDM) at Tc | 610 A |
| On-Resistance RDS(on) max @ VGS=10V | 0.5 mOhm |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 333 W |
| מארז | PG-TSON-8-9 (PQFN 5x6 mm) |
| סוג הרכבה | Surface Mount |
| טווח טמפרטורת פעולה | -55C to +150C |
| Technology | OptiMOS 6 trench MOSFET |
| סטטוס RoHS | Compliant |
| רמת MSL | 1 |
תצורת פינים של IQD005N04NM6ATMA1
| פין 1 | Source — Source connection (pins 1-3 grouped) |
| פין 2 | Source — Source connection |
| פין 3 | Source — Source connection |
| פין 4 | Source — Source connection (pins 4-7 grouped) |
| פין 5 | Source — Source connection |
| פין 6 | Source — Source connection |
| פין 7 | Source — Source connection |
| פין 8 | Gate — Gate drive input |
| פין EP | Drain — Drain connection via exposed pad (thermal pad) |
אזור פעולה בטוח (DC, T_C = 25 C)
יישומים טיפוסיים
IQD005N04NM6ATMA1 מתאים עבור 6 יישוםs: 12V/24V Synchronous Rectification in SMPS, Hot-Swap / eFuse on 12V and 24V Buses, Battery Pack Protection & OR-ing, USB-PD Power-Path Switch, BLDC Motor Drive Half-Bridge, Industrial 24V PLC Switching.
12V/24V Synchronous Rectification in SMPS
The IQD005N04NM6ATMA1 is ideal as the low-side synchronous rectifier in 40 V-or-less SMPS topologies such as buck, half-bridge, and full-bridge converters. Its 0.5 mOhm RDS(on) minimizes conduction loss at high load current, while the OptiMOS 6 die's low Qoss (output charge) and Qg (gate charge) reduce switching loss and enable higher switching frequencies, shrinking magnetics. Placed across the synchronous FET position with the source pad soldered to a large copper pour and multiple thermal vias, the part sustains 30-50 A continuous current without heatsinking. Compared with discrete Schottky rectifiers, the synchronous MOSFET approach cuts rectifier loss by 60-80% in 12 V-24 V to point-of-load converters.
מומלץ
Hot-Swap / eFuse on 12V and 24V Buses
Hot-swap and eFuse controllers require a low-RDS(on) power path switch that can sustain the inrush of large capacitive loads while dissipating minimal heat. The IQD005N04NM6ATMA1's 0.5 mOhm RDS(on) and 610 A pulsed current capability make it well suited to insert 12 V / 24 V boards into a live backplane. Its 40 V VDS provides margin for inductive transients, and the PQFN 5x6 footprint fits alongside any of Infineon's hot-swap controllers. Estimated power dissipation at 30 A continuous is about 0.45 W, easily handled by 1 square inch of inner-layer copper.
מומלץ
Battery Pack Protection & OR-ing
In 12 V and 24 V Li-ion battery packs, the IQD005N04NM6ATMA1 functions as the low-side protection FET or OR-ing FET between paralleled packs. Its 0.5 mOhm RDS(on) keeps voltage drop under 30 mV at 60 A, preserving battery efficiency during high-rate discharge. The 40 V VDS rating covers any 24 V nominal pack with inductive spike margin. The PQFN 5x6 footprint allows tight placement adjacent to the BMS controller, and the exposed source pad provides the primary heat-dissipation path.
מומלץ
USB-PD Power-Path Switch
USB Power Delivery (PD) and programmable power-supply (PPS) designs demand a power-path MOSFET that can carry 5 A (100 W at 20 V) without appreciable loss. The IQD005N04NM6ATMA1's 0.5 mOhm RDS(on) keeps full-load drop under 50 mV, well within the USB-PD cable-compensation budget. Its 40 V VDS rating exceeds the 21 V PD3.1 extended-power range with margin. Place the part on the VBUS line between the source and the connector, with the exposed pad thermally tied to inner copper for sustained 5 A continuous current.
מומלץ
BLDC Motor Drive Half-Bridge
Brushless DC (BLDC) motor drives benefit from the IQD005N04NM6ATMA1's low RDS(on) as either the high-side or low-side switch in a 3-phase half-bridge operating from a 12 V or 24 V battery. At 0.5 mOhm the per-FET conduction loss at 30 A is only 0.45 W, enabling smaller heatsinks in e-mobility and robotics. The 40 V VDS comfortably covers 24 V battery transients, and the OptiMOS 6 low Qg supports PWM frequencies up to 100 kHz for silent motor operation.
מומלץ
Industrial 24V PLC Switching
Industrial PLC and process-control designs that switch 24 V loads at high current benefit from the IQD005N04NM6ATMA1's combination of low RDS(on), 40 V VDS, and robust 333 W pulsed capability. Use it as the low-side switch for solenoid, relay, or LED-indicator banks. The PG-TSON-8-9 footprint accommodates dense multi-channel boards, and the part's 150 °C operating junction range tolerates elevated ambient temperatures inside sealed control cabinets.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור IQD005N04NM6ATMA1 — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | ISC011N04NM7VATMA1 | ISC037N12NM6ATMA1 | BSC019N04LSGATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 120 V (overspec) | 40 V | 80 V (overspec) |
| On-Resistance RDS(on) max @10V | 0.5 mOhm | 1.1 mOhm | 3.7 mOhm | 1.9 mOhm | 15.1 mOhm |
| Technology Generation | OptiMOS 6 | OptiMOS 7 | OptiMOS 6 | OptiMOS 5 | OptiMOS 6 |
| Unit Price (1 pc, as of 2026-09-15) | USD 1.92 | USD 1.65 (est.) | USD 2.10 (est.) | USD 1.10 (est.) | USD 1.45 (est.) |
מבדילים עיקריים
- Lowest RDS(on) in Infineon's 40V PQFN 5x6 portfolio (לעומתISC011N04NM7VATMA1)
- OptiMOS 6 generation with reduced switching loss (לעומתBSC019N04LSGATMA1)
- 40 V VDS precisely matched to 12V/24V buses without overspec (לעומתISC037N12NM6ATMA1)
- Highest pulsed drain current capability in its class (לעומתISC151N08NM6ATMA1)
הערות תכנון
Estimated: with VIN=24V, VOUT=12V, and 30 A continuous current through one IQD005N04NM6ATMA1, power dissipation is 0.5 mOhm x 30 A squared = 0.45 W. Solder the exposed source pad directly to a 1 oz copper pour of at least 1 square inch, with an array of 9-16 thermal vias (0.3 mm drill, 0.6 mm pad) into the inner-layer ground plane to drop the junction-to-ambient thermal resistance below 40 C/W and keep Tj below 100 C at 25 C ambient.
Minimize the source-inductance loop by placing the gate driver return path directly at the source pins 1-3 (Kelvin connection if possible). Keep the gate-trace loop area under 0.5 square cm and route it on a separate inner layer to avoid miller coupling from the drain switching node. For circuits switching above 100 kHz, add a 10-ohm gate-source resistor to dampen any gate-oscillation.
The IQD005N04NM6ATMA1's 333 W pulsed (Tc) power dissipation is achievable only with the case held at 25 C; in real designs at Ta=70 C ambient derate by at least 50%. Estimated: continuous 30 A conduction at 24 V to 12 V (0.5 mOhm) dissipates 0.45 W, which sustains indefinitely on a 1 sq inch copper pour. For continuous operation above 40 A, attach a small 15 C/W heatsink to keep Tj below 125 C.
Do not use the IQD005N04NM6ATMA1 in linear-mode operation (VGS on, VDS high) - it will dissipate the full VDS x ID product and quickly exceed Tj(max). Always switch the part fully on (VGS >= 10 V) or fully off (VGS = 0 V). Ensure the gate driver can source/sink at least 1 A peak to charge and discharge the input capacitance quickly during the miller plateau, otherwise switching loss will rise sharply.
The OptiMOS 6 die's low Qoss reduces ringing on the drain switching node, which directly cuts radiated EMI. To further reduce emissions, add an RC snubber (10 ohm + 1 nF) across the FET and place a small ferrite bead in series with the drain. Keep the switching-node copper area minimal and route it away from the gate trace to avoid capacitive re-injection.
מידע על תאימות
Industrial-grade Infineon OptiMOS 6 part; AEC-Q101 automotive-grade variant available as IQD005N04NM6AATMA1. RoHS and REACH compliant per Infineon product page; halogen-free per MSL-1 qualification.
