ATSAMG55J19B-AUT vs ATSAMG55J19A-AU तुलना
विस्तृत दोनों ओर की तुलना ATSAMG55J19B-AUT द्वारा Microchip Technology और ATSAMG55J19A-AU द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
ATSAMG55J19B-AUT - ARM Cortex-M4 MCU 120MHz 512KB LQFP-64
ATSAMG55J19B-AUT ✓ सक्रियMicrochip Technology
ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip
ATSAMG55J19A-AU ✓ सक्रियविशेषता तुलना
| पैरामीटर | ATSAMG55J19B-AUT | ATSAMG55J19A-AU |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | Microcontrollers | Microcontrollers |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Core Architecture | ARM Cortex-M4 with single-precision FPU | ARM Cortex-M4 with FPU |
| अधिकतम क्लॉक फ़्रीक्वेंसी | 120 MHz | — |
| Program Memory (Flash) | 512 KB (512K x 8) | — |
| SRAM | 176 KB | — |
| Operating Voltage Range | 1.62 V to 3.6 V | — |
| पैकेज | 64-pin LQFP (10x10 mm) | 64-LQFP (10x10 mm) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान रेंज | -40C to +85C (Industrial) | — |
| डेटा बस चौड़ाई | 32-bit | — |
| Number of I/O Pins | Up to 47 (per datasheet) | — |
| USB Interface | USB 2.0 Full-Speed Device/Host with on-chip PHY | — |
| Audio Interface | I2S (digital audio) | I2S with PDM/TDM and sample-rate converter |
| ADC | 12-bit, 16-channel (per datasheet) | 12-bit SAR |
| Timers/PWM | 16-bit timers, PWM channels (per datasheet) | — |
| Communication Peripherals | USART, SPI, TWI/I2C | USART/UART, SPI, TWI (I2C), I2S, HS USB |
| DMA | Peripheral DMA controller | — |
| RoHS स्थिति | Compliant | Compliant |
| Delivery Form | Tape & Reel (AUT suffix) | — |
| Series | SAM G55 | — |
| Silicon Revision | B | — |
| Core Clock Speed (max) | — | 120 MHz |
| Instruction Set | — | 32-bit RISC + DSP extensions + FPU (single-precision) |
| Program Flash Memory | — | 512 KB (512K x 8) |
| SRAM (Total) | — | 160 KB |
| Backup SRAM with Retention | — | 16 KB (retained in deep sleep) |
| Supply Voltage (VDDIO/VDDCORE) | — | 1.62 V to 3.6 V |
| ऑपरेटिंग तापमान | — | -40 C to +85 C (industrial) |
| USB | — | USB 2.0 Full-Speed device/host |
| External Bus Interface (EBI) | — | Yes (for SRAM/SDRAM/NOR Flash expansion) |
| Active Power Consumption | — | Down to 100 uA/MHz |
| Deep Sleep Current | — | Below 7 uA with SRAM retention |
| Wake-up Time (deep sleep to first instruction) | — | Down to 3 us |
| Lifecycle / New Design Recommendation | — | Active (new designs: consider ATSAMG55J19B Revision B) |