ATSAMG55J19B-AUT vs ATSAMG55J19A-AU Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ATSAMG55J19B-AUT sa pamamagitan ng Microchip Technology at ATSAMG55J19A-AU sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Microchip Technology
ATSAMG55J19B-AUT ATSAMG55J19B-AUT - ARM Cortex-M4 MCU 120MHz 512KB LQFP-64

ATSAMG55J19B-AUT - ARM Cortex-M4 MCU 120MHz 512KB LQFP-64

ATSAMG55J19B-AUT ✓ Nakahanda
Microchip Technology
ATSAMG55J19A-AU ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ATSAMG55J19B-AUT ATSAMG55J19A-AU
Brand Microchip Technology Microchip Technology
Kategorya Microcontrollers Microcontrollers
Katayuan ng Lifecycle Aktibo Aktibo
Core Architecture ARM Cortex-M4 with single-precision FPU ARM Cortex-M4 with FPU
Maksimum na Taktiko ng Oras 120 MHz —
Program Memory (Flash) 512 KB (512K x 8) —
SRAM 176 KB —
Operating Voltage Range 1.62 V to 3.6 V —
Packhaging 64-pin LQFP (10x10 mm) 64-LQFP (10x10 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40C to +85C (Industrial) —
Width ng Data Bus 32-bit —
Number of I/O Pins Up to 47 (per datasheet) —
USB Interface USB 2.0 Full-Speed Device/Host with on-chip PHY —
Audio Interface I2S (digital audio) I2S with PDM/TDM and sample-rate converter
ADC 12-bit, 16-channel (per datasheet) 12-bit SAR
Timers/PWM 16-bit timers, PWM channels (per datasheet) —
Communication Peripherals USART, SPI, TWI/I2C USART/UART, SPI, TWI (I2C), I2S, HS USB
DMA Peripheral DMA controller —
Tindminan RoHS Compliant Compliant
Delivery Form Tape & Reel (AUT suffix) —
Series SAM G55 —
Silicon Revision B —
Core Clock Speed (max) — 120 MHz
Instruction Set — 32-bit RISC + DSP extensions + FPU (single-precision)
Program Flash Memory — 512 KB (512K x 8)
SRAM (Total) — 160 KB
Backup SRAM with Retention — 16 KB (retained in deep sleep)
Supply Voltage (VDDIO/VDDCORE) — 1.62 V to 3.6 V
Temperature na Operasyon — -40 C to +85 C (industrial)
USB — USB 2.0 Full-Speed device/host
External Bus Interface (EBI) — Yes (for SRAM/SDRAM/NOR Flash expansion)
Active Power Consumption — Down to 100 uA/MHz
Deep Sleep Current — Below 7 uA with SRAM retention
Wake-up Time (deep sleep to first instruction) — Down to 3 us
Lifecycle / New Design Recommendation — Active (new designs: consider ATSAMG55J19B Revision B)

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