BFU520R vs BFU520AR तुलना
विस्तृत दोनों ओर की तुलना BFU520R द्वारा NXP Semiconductors और BFU520AR द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | BFU520R | BFU520AR |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | Transistors | Transistors |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| ट्रांज़िस्टर प्रकार | NPN wideband silicon RF BJT | NPN wideband silicon RF BJT |
| कलेक्टर-एमिटर वोल्टेज (Vceo) | 12 V | — |
| Collector Current (IC max) | 30 mA | — |
| ट्रांज़िशन फ्रीक्वेंसी (ft) | 10.5 GHz | 10 GHz |
| Total Power Dissipation | 450 mW | — |
| Frequency Range | up to 2 GHz application range | — |
| पैकेज | SOT-143B (4-pin, dual-emitter, plastic) | SOT-23 (TO-236AB), 3-pin |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Noise Performance | Low noise, high breakdown | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Family | BFU5 (BFU5x wideband silicon RF transistors) | — |
| Configuration | Single NPN, dual-emitter | — |
| Application Class | Small signal to medium power | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: operating temperature range] | -40C to +150C |
| Noise Figure | [DATA_NEEDED: noise figure in dB] | [DATA_NEEDED: noise figure] |
| Gain | [DATA_NEEDED: gain] | — |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Continuous Collector Current (IC) | — | 30 mA |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Qualification | — | AEC-Q101 (automotive qualified per distributor listing) |
| Product Family | — | BFU5 wideband RF transistor family |
| Intended Application Band | — | Small signal to medium power up to 2 GHz |
| Polarity | — | NPN |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| Packaging | — | Reel (R suffix, tape and reel) |