BFU520R vs BFU520AR Perbandingan
Perbandingan bersamaan detil BFU520R dari NXP Semiconductors dan BFU520AR dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BFU520R | BFU520AR |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Transistors | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | NPN wideband silicon RF BJT | NPN wideband silicon RF BJT |
| Tegangan Pemisah-Penjana (Vceo) | 12 V | — |
| Collector Current (IC max) | 30 mA | — |
| Frekuensi Transisi (ft) | 10.5 GHz | 10 GHz |
| Total Power Dissipation | 450 mW | — |
| Frequency Range | up to 2 GHz application range | — |
| Paket | SOT-143B (4-pin, dual-emitter, plastic) | SOT-23 (TO-236AB), 3-pin |
| Tipe Mounting | Surface Mount | Surface Mount |
| Noise Performance | Low noise, high breakdown | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Family | BFU5 (BFU5x wideband silicon RF transistors) | — |
| Configuration | Single NPN, dual-emitter | — |
| Application Class | Small signal to medium power | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +150C |
| Noise Figure | [DATA_NEEDED: noise figure in dB] | [DATA_NEEDED: noise figure] |
| Gain | [DATA_NEEDED: gain] | — |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Continuous Collector Current (IC) | — | 30 mA |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Qualification | — | AEC-Q101 (automotive qualified per distributor listing) |
| Product Family | — | BFU5 wideband RF transistor family |
| Intended Application Band | — | Small signal to medium power up to 2 GHz |
| Polarity | — | NPN |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| Packaging | — | Reel (R suffix, tape and reel) |