BFU520R vs BFU520AR 比較
詳細並排比較 BFU520R 由 NXP Semiconductors 與 BFU520AR 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BFU520R | BFU520AR |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | Transistors | Transistors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | NPN wideband silicon RF BJT | NPN wideband silicon RF BJT |
| 集極-射極電壓 (Vceo) | 12 V | — |
| Collector Current (IC max) | 30 mA | — |
| 轉換頻率 (ft) | 10.5 GHz | 10 GHz |
| Total Power Dissipation | 450 mW | — |
| Frequency Range | up to 2 GHz application range | — |
| 封裝 | SOT-143B (4-pin, dual-emitter, plastic) | SOT-23 (TO-236AB), 3-pin |
| 安裝類型 | Surface Mount | Surface Mount |
| Noise Performance | Low noise, high breakdown | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Family | BFU5 (BFU5x wideband silicon RF transistors) | — |
| Configuration | Single NPN, dual-emitter | — |
| Application Class | Small signal to medium power | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -40C to +150C |
| Noise Figure | [DATA_NEEDED: noise figure in dB] | [DATA_NEEDED: noise figure] |
| Gain | [DATA_NEEDED: gain] | — |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Continuous Collector Current (IC) | — | 30 mA |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Qualification | — | AEC-Q101 (automotive qualified per distributor listing) |
| Product Family | — | BFU5 wideband RF transistor family |
| Intended Application Band | — | Small signal to medium power up to 2 GHz |
| Polarity | — | NPN |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| Packaging | — | Reel (R suffix, tape and reel) |