BFU520R vs BFU520AR Karşılaştırma
Ayrıntılı yan yana karşılaştırma BFU520R tarafından NXP Semiconductors ve BFU520AR tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BFU520R | BFU520AR |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | Transistors | Transistors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | NPN wideband silicon RF BJT | NPN wideband silicon RF BJT |
| Toplayıcı-Emisör Voltage (Vceo) | 12 V | — |
| Collector Current (IC max) | 30 mA | — |
| Geçiş Frekansı (ft) | 10.5 GHz | 10 GHz |
| Total Power Dissipation | 450 mW | — |
| Frequency Range | up to 2 GHz application range | — |
| Paket | SOT-143B (4-pin, dual-emitter, plastic) | SOT-23 (TO-236AB), 3-pin |
| Montaj Türü | Surface Mount | Surface Mount |
| Noise Performance | Low noise, high breakdown | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Family | BFU5 (BFU5x wideband silicon RF transistors) | — |
| Configuration | Single NPN, dual-emitter | — |
| Application Class | Small signal to medium power | — |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: operating temperature range] | -40C to +150C |
| Noise Figure | [DATA_NEEDED: noise figure in dB] | [DATA_NEEDED: noise figure] |
| Gain | [DATA_NEEDED: gain] | — |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Continuous Collector Current (IC) | — | 30 mA |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Qualification | — | AEC-Q101 (automotive qualified per distributor listing) |
| Product Family | — | BFU5 wideband RF transistor family |
| Intended Application Band | — | Small signal to medium power up to 2 GHz |
| Polarity | — | NPN |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| Packaging | — | Reel (R suffix, tape and reel) |