BSC028N06NSTATMA1 vs BSZ0901NSIATMA1 तुलना
विस्तृत दोनों ओर की तुलना BSC028N06NSTATMA1 द्वारा Infineon और BSZ0901NSIATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | BSC028N06NSTATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 25V |
| Part Number Base | BSC028N06NS | — |
| Technology | MOSFET N-Channel (OptiMOS 5) | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | — |
| Total Gate Charge Qg | 37 nC @ VGS=10V | — |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | — |
| Output Capacitance Coss | 825 pF | — |
| Reverse Transfer Capacitance Crss | 56 pF | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 100 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55C to +175C | — |
| पैकेज | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| RoHS स्थिति | Compliant | Compliant |
| हैलोजन फ्री | Yes | — |
| MSL स्तर | 1 | — |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | — |
| Part Number | — | BSZ0901NSIATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| पिन काउंट | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| ऑपरेटिंग तापमान रेंज | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |