BSC028N06NSTATMA1 vs BSZ0901NSIATMA1 比較

詳細並排比較 BSC028N06NSTATMA1 由 Infineon 與 BSZ0901NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC028N06NSTATMA1 BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 ✓ 啟用中

規格比較

參數 BSC028N06NSTATMA1 BSZ0901NSIATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 25V
Part Number Base BSC028N06NS —
Technology MOSFET N-Channel (OptiMOS 5) OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.5 V to 3.5 V —
Total Gate Charge Qg 37 nC @ VGS=10V —
Input Capacitance Ciss 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] —
Output Capacitance Coss 825 pF —
Reverse Transfer Capacitance Crss 56 pF —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 100 W —
工作接面溫度 -55C to +175C —
封裝 PG-TDSON-8-7 (SuperSO8, 5x6 mm) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
無鹵素 Yes —
MSL 等級 1 —
AEC-Q101 Automotive Qualified [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] —
Part Number — BSZ0901NSIATMA1
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
腳位數 — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
工作溫度範圍 — -55 C to +150 C (typical MOSFET range)
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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