EP3SE50F780C4N vs EP3SE50F780C4G तुलना
विस्तृत दोनों ओर की तुलना EP3SE50F780C4N द्वारा Intel और EP3SE50F780C4G द्वारा Intel. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Intel
EP3SE50F780C4G - Stratix III E FPGA, 47.5K LE, 488 I/O, 780-FBGA | Intel
EP3SE50F780C4G ✓ सक्रियविशेषता तुलना
| पैरामीटर | EP3SE50F780C4N | EP3SE50F780C4G |
|---|---|---|
| ब्रांड | Intel | Intel |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | NRND | सक्रिय |
| Family | Stratix III E | Stratix III E |
| Logic Elements (LE) | 47,500 | — |
| Embedded Memory Bits | 5,760,000 | — |
| Embedded Memory (M9K/M144K blocks) | 488 (per family datasheet) | — |
| Number of LABs | 1900 | — |
| Maximum User I/Os | 488 | — |
| DSP Blocks (18x18 multipliers) | 432 | — |
| PLLs | 12 (per family datasheet) | — |
| Maximum Operating Frequency | 717 MHz | — |
| Transceiver Channels | Up to 12 (per family, model-dependent) | — |
| Transceiver Data Rate | Up to 6.375 Gbps (per Stratix III E family) | — |
| Process Node | 40 nm | — |
| पैकेज | 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch | 780-ball FBGA (FCBGA) |
| माउंटिंग प्रकार | Surface Mount (BGA) | Surface Mount (SMD/SMT) |
| सप्लाई वोल्टेज | Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail) | — |
| ऑपरेटिंग तापमान | 0C to +85C (C4 commercial grade) | — |
| Configuration Modes | JTAG, Passive Serial, Fast Passive Parallel | — |
| RoHS स्थिति | Lead-free / RoHS compliant | Compliant |
| MSL स्तर | 3 (per JEDEC J-STD-020, FBGA package) | MSL3 (per JEDEC J-STD-020) |
| Hard Memory Controller | DDR2/DDR3 SDRAM (per Stratix III E family) | — |
| Series | — | Stratix III |
| Logic Elements | — | 47,500 LE |
| Adaptive Logic Modules (ALMs) | — | 19,000 ALM |
| Embedded Memory | — | 5.76 Mbit (5760000 bit) |
| Number of I/Os | — | 488 |
| Number of Logic Array Blocks (LABs) | — | [DATA_NEEDED: LAB count from datasheet] |
| Number of Multipliers (18x18) | — | [DATA_NEEDED: 18x18 multiplier count] |
| Process Technology | — | 40 nm TSMC |
| Core Supply Voltage | — | 1.1 V |
| ऑपरेटिंग तापमान रेंज | — | 0 C to +85 C (commercial) |
| Lead-Free | — | Yes |
| Configuration Memory | — | SRAM-based (volatile, requires configuration device) |
| Design Software | — | Quartus II |