EP3SE50F780I3G vs EP3SE110F780I3N तुलना
विस्तृत दोनों ओर की तुलना EP3SE50F780I3G द्वारा Intel और EP3SE110F780I3N द्वारा Intel. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Intel
EP3SE110F780I3N - 107.5K Logic Elements, 780-FBGA FPGA | Intel Stratix III E
EP3SE110F780I3N Nrndविशेषता तुलना
| पैरामीटर | EP3SE50F780I3G | EP3SE110F780I3N |
|---|---|---|
| ब्रांड | Intel | Intel |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | NRND | NRND |
| Family | Stratix III E | Stratix III E |
| Logic Elements (LE) | 47,500 | — |
| Adaptive Logic Modules (ALM) | 19,000 | — |
| Embedded Memory | 8.7 Mbits (M9K + M144K blocks) | — |
| DSP Blocks | 264 (18x18 multipliers) | — |
| Maximum User I/O Pins | 488 | — |
| Transceivers | 12 channels, up to 3.75 Gbps | — |
| Core Voltage | 1.1 V | 1.1 V (range 1.05 V to 1.15 V) |
| Process Technology | TSMC 40 nm | 65 nm CMOS |
| पैकेज | 780-pin FC-FBGA (F780) 29x29 mm | 780-pin FC-FBGA (Flip-Chip FineLine BGA) |
| ऑपरेटिंग तापमान | -40C to +100C (Industrial, I3) | -40 °C to +100 °C (Industrial, "I" grade) |
| Speed Grade | 3 | 3 (Fast) |
| Memory Interfaces | DDR3 up to 800 MHz, DDR2, QDR II+ SRAM | — |
| PCI Express Hard IP | Gen1 x1/x4/x8 | — |
| माउंटिंग प्रकार | Surface Mount (BGA) | Surface Mount (BGA) |
| MSL स्तर | 3 | [DATA_NEEDED: MSL level] |
| RoHS स्थिति | Compliant | Compliant |
| Lead-Free | Yes | — |
| Logic Elements | — | 107,500 |
| Logic Array Blocks (LABs) | — | 4,300 |
| Embedded Memory Bits | — | 8,936,448 (approximately 1.1 MB) |
| Maximum User I/Os | — | 488 |
| Configuration Interface | — | Passive Serial (PS), Fast Passive Parallel (FPP), JTAG (IEEE 1149.1) |
| Boundary-Scan Test | — | Yes, per IEEE Std. 1149.1 |
| PLLs | — | Yes, with global and regional clock networks |
| Supply Voltage Tolerance | — | 1.05 V to 1.15 V |