EP3SE50F780I3G vs EP3SE110F780I3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE50F780I3G sa pamamagitan ng Intel at EP3SE110F780I3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
EP3SE110F780I3N - 107.5K Logic Elements, 780-FBGA FPGA | Intel Stratix III E
EP3SE110F780I3N NrndPagsanggunian na paghahambing
| Parametro | EP3SE50F780I3G | EP3SE110F780I3N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | NRND |
| Family | Stratix III E | Stratix III E |
| Logic Elements (LE) | 47,500 | — |
| Adaptive Logic Modules (ALM) | 19,000 | — |
| Embedded Memory | 8.7 Mbits (M9K + M144K blocks) | — |
| DSP Blocks | 264 (18x18 multipliers) | — |
| Maximum User I/O Pins | 488 | — |
| Transceivers | 12 channels, up to 3.75 Gbps | — |
| Core Voltage | 1.1 V | 1.1 V (range 1.05 V to 1.15 V) |
| Process Technology | TSMC 40 nm | 65 nm CMOS |
| Packhaging | 780-pin FC-FBGA (F780) 29x29 mm | 780-pin FC-FBGA (Flip-Chip FineLine BGA) |
| Temperature na Operasyon | -40C to +100C (Industrial, I3) | -40 °C to +100 °C (Industrial, "I" grade) |
| Speed Grade | 3 | 3 (Fast) |
| Memory Interfaces | DDR3 up to 800 MHz, DDR2, QDR II+ SRAM | — |
| PCI Express Hard IP | Gen1 x1/x4/x8 | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| Level ng MSL | 3 | [DATA_NEEDED: MSL level] |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Logic Elements | — | 107,500 |
| Logic Array Blocks (LABs) | — | 4,300 |
| Embedded Memory Bits | — | 8,936,448 (approximately 1.1 MB) |
| Maximum User I/Os | — | 488 |
| Configuration Interface | — | Passive Serial (PS), Fast Passive Parallel (FPP), JTAG (IEEE 1149.1) |
| Boundary-Scan Test | — | Yes, per IEEE Std. 1149.1 |
| PLLs | — | Yes, with global and regional clock networks |
| Supply Voltage Tolerance | — | 1.05 V to 1.15 V |