IAUCN04S7L042GATMA1 vs IAUCN04S7L005ATMA1 तुलना
विस्तृत दोनों ओर की तुलना IAUCN04S7L042GATMA1 द्वारा Infineon और IAUCN04S7L005ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ सक्रियInfineon
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
IAUCN04S7L005ATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IAUCN04S7L042GATMA1 | IAUCN04S7L005ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 40V | — |
| Technology | Trench N-Channel MOSFET | OptiMOS 7 (trench N-channel MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 77 A | — |
| Maximum Power Dissipation (PD, Tc) | 50 W | — |
| पैकेज | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-TDSON-8-43 (TDSON-8) |
| माउंटिंग प्रकार | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| ऑपरेटिंग तापमान रेंज | -55C to +175C (Tj) | -55°C to +175°C (Tj) |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | — |
| RoHS स्थिति | Compliant | Compliant |
| MSL स्तर | 1 | [DATA_NEEDED: MSL rating] |
| Packing | Tape & Reel (per -ATMA1 suffix) | — |
| Target Substrate | IMS substrate and legacy FR4 designs | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 430 A (Tj) |
| Continuous Drain Current (I_D, T_C=100°C) | — | [DATA_NEEDED: I_D at T_C=100°C] |
| On-Resistance R_DS(on) max | — | 0.52 mΩ |
| Power Dissipation (P_D) | — | 179 W (T_C) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: total Q_g in nC] |
| पिन काउंट | — | 8 |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes |