IAUZN04S7L025ATMA1 vs IAUCN04S7N027GATMA1 तुलना
विस्तृत दोनों ओर की तुलना IAUZN04S7L025ATMA1 द्वारा Infineon और IAUCN04S7N027GATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon
IAUZN04S7L025ATMA1 ✓ सक्रियInfineon
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IAUZN04S7L025ATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | OptiMOS 7 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum] | — |
| Continuous Drain Current (ID) at TC=25C | 117 A | — |
| Continuous Drain Current (ID) at TA | 60 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | — |
| RDS(on) Max at VGS=10V | 2.56 mΩ | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at TC=25C | 65 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55C to +175C | — |
| पैकेज | PG-TSDSON-8-44 (S3O8) | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant | — |
| MSL स्तर | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL] |
| Typical Applications | Synchronous rectification, hot-swap, OR-ing, motor drive | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds max) | — | 40 V |
| Continuous Drain Current (Id) | — | 117 A |
| On-Resistance (Rds(on) max) | — | 2.67 mOhm |
| Power Dissipation (Pd) | — | 70 W (Tc) |
| पैकेज / केस | — | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | — | Automotive |
| ऑपरेटिंग तापमान रेंज | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | — | [DATA_NEEDED: Vgs max] |
| RoHS स्थिति | — | Compliant |
| Substrate Compatibility | — | IMS substrates and legacy FR-4 |