IAUZN04S7L025ATMA1 vs IAUCN04S7N027GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZN04S7L025ATMA1 disebabkan oleh Infineon dan IAUCN04S7N027GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZN04S7L025ATMA1 IAUCN04S7N027GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 OptiMOS 7
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum] —
Continuous Drain Current (ID) at TC=25C 117 A —
Continuous Drain Current (ID) at TA 60 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
RDS(on) Max at VGS=10V 2.56 mΩ —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: Qg]
Power Dissipation (PD) at TC=25C 65 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan PG-TSDSON-8-44 (S3O8) —
Jenis Pemasangan Surface Mount Surface Mount
AEC-Q100 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL]
Typical Applications Synchronous rectification, hot-swap, OR-ing, motor drive —
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Kemasan / Case — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Status RoHS — Compliant
Substrate Compatibility — IMS substrates and legacy FR-4

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