IAUZN04S7L025ATMA1 vs IAUCN04S7N027GATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN04S7L025ATMA1 dari Infineon dan IAUCN04S7N027GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUZN04S7L025ATMA1 IAUCN04S7N027GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 OptiMOS 7
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum] —
Continuous Drain Current (ID) at TC=25C 117 A —
Continuous Drain Current (ID) at TA 60 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
RDS(on) Max at VGS=10V 2.56 mΩ —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: Qg]
Power Dissipation (PD) at TC=25C 65 W —
Suhu Hubung Kerja -55C to +175C —
Paket PG-TSDSON-8-44 (S3O8) —
Tipe Mounting Surface Mount Surface Mount
AEC-Q100 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL]
Typical Applications Synchronous rectification, hot-swap, OR-ing, motor drive —
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Paket / Case — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Status RoHS — Compliant
Substrate Compatibility — IMS substrates and legacy FR-4

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