IGI65D1414A3MSXUMA1 vs IGI60L5050B1MXUMA1 तुलना
विस्तृत दोनों ओर की तुलना IGI65D1414A3MSXUMA1 द्वारा Infineon और IGI60L5050B1MXUMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ सक्रियInfineon
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IGI65D1414A3MSXUMA1 | IGI60L5050B1MXUMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolGaN™ HEMT | — |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) | Half-bridge (high-side + low-side switch with integrated gate driver) |
| Drain-Source Voltage (V_DS, max) | 650 V | — |
| On-Resistance (R_DS(on), typ) | 140 mΩ per FET | — |
| Continuous Drain Current | 13.7 A (per Newark listing) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Technology | Enhancement-mode GaN HEMT (eMode) | GaN (Gallium Nitride), enhancement-mode |
| पैकेज | PG-TIQFN-32-1 (QFN-32, 6x8 mm) | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: operating temperature range] | — |
| Total Gate Charge (Q_G, typ) | [DATA_NEEDED: Q_G total] | — |
| Output Charge (Q_OSS) | [DATA_NEEDED: Q_OSS value] | — |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) | — |
| Thermal Resistance (R_thJA) | [DATA_NEEDED: R_thJA value] | — |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting | — |
| MSL स्तर | [DATA_NEEDED: MSL level] | — |
| RoHS Compliance | Compliant | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-State Resistance (RDS(on)) per switch | — | 500 mΩ (0.5 Ω) |
| Number of GaN Switches | — | 2 |
| Gate Driver Source Current | — | +0.29 A |
| Gate Driver Sink Current | — | -0.7 A |
| Integrated Bootstrap Diode | — | Yes (ultra-fast, low-resistance) |
| Turn-on / Turn-off dV/dt | — | Application-configurable (via gate resistor) |
| पिन काउंट | — | 27 |
| ऑपरेटिंग तापमान | — | -40 °C to +125 °C (junction 150 °C) |
| RoHS स्थिति | — | Compliant |
| Reach Status | — | Compliant |
| Lead-Free | — | Yes |
| Target Applications | — | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives |