IGI65D1414A3MSXUMA1 vs IGI60L5050B1MXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IGI65D1414A3MSXUMA1 sa pamamagitan ng Infineon at IGI60L5050B1MXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ NakahandaInfineon
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IGI65D1414A3MSXUMA1 | IGI60L5050B1MXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolGaN™ HEMT | — |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) | Half-bridge (high-side + low-side switch with integrated gate driver) |
| Drain-Source Voltage (V_DS, max) | 650 V | — |
| On-Resistance (R_DS(on), typ) | 140 mΩ per FET | — |
| Continuous Drain Current | 13.7 A (per Newark listing) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Technology | Enhancement-mode GaN HEMT (eMode) | GaN (Gallium Nitride), enhancement-mode |
| Packhaging | PG-TIQFN-32-1 (QFN-32, 6x8 mm) | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Total Gate Charge (Q_G, typ) | [DATA_NEEDED: Q_G total] | — |
| Output Charge (Q_OSS) | [DATA_NEEDED: Q_OSS value] | — |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) | — |
| Thermal Resistance (R_thJA) | [DATA_NEEDED: R_thJA value] | — |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| RoHS Compliance | Compliant | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-State Resistance (RDS(on)) per switch | — | 500 mΩ (0.5 Ω) |
| Number of GaN Switches | — | 2 |
| Gate Driver Source Current | — | +0.29 A |
| Gate Driver Sink Current | — | -0.7 A |
| Integrated Bootstrap Diode | — | Yes (ultra-fast, low-resistance) |
| Turn-on / Turn-off dV/dt | — | Application-configurable (via gate resistor) |
| Bilang ng Pin | — | 27 |
| Temperature na Operasyon | — | -40 °C to +125 °C (junction 150 °C) |
| Tindminan RoHS | — | Compliant |
| Reach Status | — | Compliant |
| Lead-Free | — | Yes |
| Target Applications | — | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives |