IGI65D1414A3MSXUMA1 vs IGI60L5050B1MXUMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IGI65D1414A3MSXUMA1 tarafından Infineon ve IGI60L5050B1MXUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ AktifInfineon
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IGI65D1414A3MSXUMA1 | IGI60L5050B1MXUMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolGaN™ HEMT | — |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) | Half-bridge (high-side + low-side switch with integrated gate driver) |
| Drain-Source Voltage (V_DS, max) | 650 V | — |
| On-Resistance (R_DS(on), typ) | 140 mΩ per FET | — |
| Continuous Drain Current | 13.7 A (per Newark listing) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Technology | Enhancement-mode GaN HEMT (eMode) | GaN (Gallium Nitride), enhancement-mode |
| Paket | PG-TIQFN-32-1 (QFN-32, 6x8 mm) | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: operating temperature range] | — |
| Total Gate Charge (Q_G, typ) | [DATA_NEEDED: Q_G total] | — |
| Output Charge (Q_OSS) | [DATA_NEEDED: Q_OSS value] | — |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) | — |
| Thermal Resistance (R_thJA) | [DATA_NEEDED: R_thJA value] | — |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting | — |
| MSL Seviyesi | [DATA_NEEDED: MSL level] | — |
| RoHS Compliance | Compliant | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-State Resistance (RDS(on)) per switch | — | 500 mΩ (0.5 Ω) |
| Number of GaN Switches | — | 2 |
| Gate Driver Source Current | — | +0.29 A |
| Gate Driver Sink Current | — | -0.7 A |
| Integrated Bootstrap Diode | — | Yes (ultra-fast, low-resistance) |
| Turn-on / Turn-off dV/dt | — | Application-configurable (via gate resistor) |
| Pin Sayısı | — | 27 |
| İşletim Sıcaklığı | — | -40 °C to +125 °C (junction 150 °C) |
| RoHS Durumu | — | Compliant |
| Reach Status | — | Compliant |
| Lead-Free | — | Yes |
| Target Applications | — | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives |