IPB100N04S4H2ATMA1 vs IPC70N04S5L4R2ATMA1 तुलना
विस्तृत दोनों ओर की तुलना IPB100N04S4H2ATMA1 द्वारा Infineon और IPC70N04S5L4R2ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ सक्रियInfineon
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IPB100N04S4H2ATMA1 | IPC70N04S5L4R2ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Technology | OptiMOS-T2 (trench gate) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| पैकेज | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TDSON-8-34 (Surface Mount) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| MSL स्तर | MSL1 (up to 260C peak reflow) | MSL1 (up to 260°C peak reflow) |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant (Green Product) | — |
| Drain to Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 70 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 50 W |
| R_DS(on) Max @ Vgs=10V | — | 4.2 mΩ (typ) |
| Gate Threshold (Vgs(th)) | — | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | — | 4.5 V |
| Operating Temperature (Tj) | — | -55°C to +175°C |
| Avalanche Tested | — | 100% (60 A production test) |
| RoHS स्थिति | — | Compliant (Green Product) |
| Configuration | — | Single with Built-in Diode |
| Case Connection | — | DRAIN |