IPB100N04S4H2ATMA1 vs IPC70N04S5L4R2ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB100N04S4H2ATMA1 disebabkan oleh Infineon dan IPC70N04S5L4R2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB100N04S4H2ATMA1 IPC70N04S5L4R2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode N-Channel
Technology OptiMOS-T2 (trench gate) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
Suhu Hubungan Operasi -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
Kemasan PG-TO263-3-2 (D2PAK-2) Surface Mount PG-TDSON-8-34 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260C peak reflow) MSL1 (up to 260°C peak reflow)
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Compliance Compliant (Green Product) —
Drain to Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ Tc=25°C — 70 A
Power Dissipation (Pd) @ Tc=25°C — 50 W
R_DS(on) Max @ Vgs=10V — 4.2 mΩ (typ)
Gate Threshold (Vgs(th)) — Logic Level (4.5 V max Rds On, Min Rds On)
Drive Voltage (Max Rds On, Min Rds On) — 4.5 V
Operating Temperature (Tj) — -55°C to +175°C
Avalanche Tested — 100% (60 A production test)
Status RoHS — Compliant (Green Product)
Configuration — Single with Built-in Diode
Case Connection — DRAIN

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