IPB100N04S4H2ATMA1 vs IPC70N04S5L4R2ATMA1 Perbandingan

Perbandingan bersamaan detil IPB100N04S4H2ATMA1 dari Infineon dan IPC70N04S5L4R2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB100N04S4H2ATMA1 IPC70N04S5L4R2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode N-Channel
Technology OptiMOS-T2 (trench gate) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
Suhu Hubung Kerja -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
Paket PG-TO263-3-2 (D2PAK-2) Surface Mount PG-TDSON-8-34 (Surface Mount)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260C peak reflow) MSL1 (up to 260°C peak reflow)
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Compliance Compliant (Green Product) —
Drain to Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ Tc=25°C — 70 A
Power Dissipation (Pd) @ Tc=25°C — 50 W
R_DS(on) Max @ Vgs=10V — 4.2 mΩ (typ)
Gate Threshold (Vgs(th)) — Logic Level (4.5 V max Rds On, Min Rds On)
Drive Voltage (Max Rds On, Min Rds On) — 4.5 V
Operating Temperature (Tj) — -55°C to +175°C
Avalanche Tested — 100% (60 A production test)
Status RoHS — Compliant (Green Product)
Configuration — Single with Built-in Diode
Case Connection — DRAIN

Spek dan Sumber

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