IPC70N04S5L4R2ATMA1 vs IPC100N04S51R7ATMA1 तुलना
विस्तृत दोनों ओर की तुलना IPC70N04S5L4R2ATMA1 द्वारा Infineon और IPC100N04S51R7ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IPC70N04S5L4R2ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| पैकेज | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-34 (SS08 leadless) |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| MSL स्तर | MSL1 (up to 260°C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% (60 A production test) | 100% tested |
| RoHS स्थिति | Compliant (Green Product) | Compliant (Green Product) |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| ट्रांज़िस्टर प्रकार | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| ऑपरेटिंग जंक्शन तापमान | — | -55 °C to +175 °C |
| AEC-Q101 Qualified | — | Yes |
| Built-in Body Diode | — | Yes |