IPD50R380CEAUMA1 vs IPD60R380C6ATMA1 तुलना
विस्तृत दोनों ओर की तुलना IPD50R380CEAUMA1 द्वारा Infineon और IPD60R380C6ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon
IPD50R380CEAUMA1 ✓ सक्रिय
विशेषता तुलना
| पैरामीटर | IPD50R380CEAUMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Drain-Source Voltage (V(BR)DSS) | 500 V | — |
| Continuous Drain Current (Id) at Tc=25C | 14.1 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 380 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (Ptot) at Tc=25C | 98 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55C to +150C | — |
| Technology | CoolMOS CE (super-junction) | CoolMOS C6 Superjunction |
| Channel Type | N-Channel | — |
| पैकेज | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| RoHS स्थिति | Compliant | Compliant |
| AEC-Q101 Automotive | Not qualified (CE variant; use CE-A for automotive) | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL level] | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Operating Junction Temperature (TJ) | — | -55C to +150C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| FET Type | — | N-Channel |
| MSL स्तर | — | [DATA_NEEDED: MSL level] |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |