IPD90N06S407ATMA2 vs IPD30N06S2L13ATMA4 तुलना
विस्तृत दोनों ओर की तुलना IPD90N06S407ATMA2 द्वारा Infineon और IPD30N06S2L13ATMA4 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IPD90N06S407ATMA2 | IPD30N06S2L13ATMA4 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel Enhancement Mode | — |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D at T_C) | 90 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | 6.9 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | 4 V at 40 uA | — |
| Total Gate Charge (Q_G) at V_GS=10 V | 56 nC | — |
| Maximum Power Dissipation (P_D at T_C) | 79 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55 C to +175 C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| पैकेज | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Green Product) | Yes (Green Package) |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche Tested | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS |
| Channel Type | — | N-Channel |
| Mode | — | Enhancement |
| Drain-Source Voltage (Vds) | — | 55 V |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| ऑपरेटिंग तापमान | — | -55 °C to +175 °C (Tj) |
| Avalanche Tested | — | 100 % production-tested |
| Technology | — | Planar (OptiMOS) |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| पिन काउंट | — | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |