IPD90N06S407ATMA2 vs IPD30N06S2L13ATMA4 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPD90N06S407ATMA2 tarafından Infineon ve IPD30N06S2L13ATMA4 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPD90N06S407ATMA2 | IPD30N06S2L13ATMA4 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel Enhancement Mode | — |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D at T_C) | 90 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | 6.9 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | 4 V at 40 uA | — |
| Total Gate Charge (Q_G) at V_GS=10 V | 56 nC | — |
| Maximum Power Dissipation (P_D at T_C) | 79 W | — |
| İşletim Jant Sıcaklığı | -55 C to +175 C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Paket | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Montaj Türü | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Green Product) | Yes (Green Package) |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche Tested | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS |
| Channel Type | — | N-Channel |
| Mode | — | Enhancement |
| Drain-Source Voltage (Vds) | — | 55 V |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| İşletim Sıcaklığı | — | -55 °C to +175 °C (Tj) |
| Avalanche Tested | — | 100 % production-tested |
| Technology | — | Planar (OptiMOS) |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| Pin Sayısı | — | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |