IPT008N06NM5LFATMA1 vs IPB021N10NM5LF2ATMA1 तुलना
विस्तृत दोनों ओर की तुलना IPT008N06NM5LFATMA1 द्वारा Infineon और IPB021N10NM5LF2ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ सक्रियInfineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IPT008N06NM5LFATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 / Linear FET | OptiMOS 5 Linear FET 2 |
| ट्रांज़िस्टर प्रकार | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 454 A | — |
| पल्स्ड ड्रेन करंट | [DATA_NEEDED: pulsed ID] | — |
| On-Resistance RDS(on) at VGS=10 V | 0.8 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) | 3.6 V (typ, 250 µA test) | — |
| Power Dissipation (Tc) | 278 W | — |
| ऑपरेटिंग तापमान रेंज | -55 °C to +175 °C (TJ) | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| पैकेज | PG-HSOF-8 (single, flat-lead) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Gate Drive (recommended) | 10 V (logic-level compatible above 4.5 V VGS) | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| MSL स्तर | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| RoHS स्थिति | Compliant | Compliant |
| REACH Status | Compliant | — |
| AEC-Q100 | not_qualified (industrial-grade by default) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |