IPT008N06NM5LFATMA1 vs IPB021N10NM5LF2ATMA1 Perbandingan
Perbandingan bersamaan detil IPT008N06NM5LFATMA1 dari Infineon dan IPB021N10NM5LF2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ AktifInfineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPT008N06NM5LFATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 / Linear FET | OptiMOS 5 Linear FET 2 |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 454 A | — |
| Arus Kedip Pengecor | [DATA_NEEDED: pulsed ID] | — |
| On-Resistance RDS(on) at VGS=10 V | 0.8 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) | 3.6 V (typ, 250 µA test) | — |
| Power Dissipation (Tc) | 278 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (TJ) | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Paket | PG-HSOF-8 (single, flat-lead) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Drive (recommended) | 10 V (logic-level compatible above 4.5 V VGS) | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Status RoHS | Compliant | Compliant |
| REACH Status | Compliant | — |
| AEC-Q100 | not_qualified (industrial-grade by default) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |