IPT008N06NM5LFATMA1 vs IPB021N10NM5LF2ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPT008N06NM5LFATMA1 sa pamamagitan ng Infineon at IPB021N10NM5LF2ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ NakahandaInfineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPT008N06NM5LFATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 / Linear FET | OptiMOS 5 Linear FET 2 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 454 A | — |
| Pulsed Drain Kuru-kuryente | [DATA_NEEDED: pulsed ID] | — |
| On-Resistance RDS(on) at VGS=10 V | 0.8 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) | 3.6 V (typ, 250 µA test) | — |
| Power Dissipation (Tc) | 278 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Packhaging | PG-HSOF-8 (single, flat-lead) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate Drive (recommended) | 10 V (logic-level compatible above 4.5 V VGS) | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Tindminan RoHS | Compliant | Compliant |
| REACH Status | Compliant | — |
| AEC-Q100 | not_qualified (industrial-grade by default) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |